12M1 Search Results

Contextual Info: Data Sheet, Doc. No. 5SYA 1695-01 08 13 5SMY 12M1730 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage

edfa

Contextual Info: MITSUBISHI OPTICAL DEVICES FU-630SLD-8M1/10M1/12M1 1.48 mm PUMP LD MODULE WITH SINGLEMODE FIBER (EDFA) DESCRIPTION Mitsubishi’s FU-630SLD series 1480nm laser diode mod ules are designed as optical pumping sources for erbium-dop ed fib er amp lifier (EDFA).This mod ule is

Contextual Info: VRRM = IF = 1700 V 200 A Fast-Diode Die 5SLX 12M1711 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1663-01 July 04 • • • • Fast and soft reverse-recovery Low losses High SOA Passivation: SIPOS Nitride plus Polyimide Maximum rated values 1 Parameter Symbol

Contextual Info: Data Sheet, Doc. No. 5SYA 1687-01 11 06 5SLY 12M1700 Fast-Diode Die VRRM =1700 V IF = 300 A Fast and soft reverse-recovery Low losses High SOA Passivation: SIPOS Nitride plus Polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage

IGBT abb

Contextual Info: VCE IC = = 1200 V 150 A IGBT-Die 5SMY 12M1200 Die size: 13.5 x 13.5 mm Doc. No. 5SYA1639-01 Sep 06 • Ultra low loss thin IGBT die • Highly rugged SPT+ design • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions

Contextual Info: VCE IC = = 1200 V 150 A IGBT-Die 5SMX 12M1274 Die size: 13.6 x 13.6 mm Doc. No. 5SYA 1305-00 May 08 • • • • Low loss thin IGBT die Highly rugged SPT design Large bondable emitter area Optimized for paralleling Maximum rated values Parameter Collector-emitter voltage

Contextual Info: VCE IC = = 1200 V 150 A IGBT-Die 5SMX 12M1252 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1623-01 Apr 04 • Low loss thin IGBT die • Highly rugged SPT design • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions

Contextual Info: MITSUBISHI OPTICAL DEVICES FU-630SLD-8M1/10M1/12M1 1.48 pm PUMP LD MODULE WITH SINGLEMODE FIBER (EDFA) DESCRIPTION Mitsubishi's FU-630SLD series 1480nm laser diode modules are designed as optical pumping sources for erbium-doped fiber amplifier (EDFA).This module

5SMX12M1701

Contextual Info: VRRM = IF = 1700 V 200 A Fast-Diode Die 5SLX 12M1711 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1663-01 Feb. 05 • • • • Fast and soft reverse-recovery Low losses High SOA Passivation: SIPOS Nitride plus Polyimide Maximum rated values 1 Parameter Symbol

Contextual Info: VCE IC = = 1200 V 150 A IGBT-Die 5SMX 12M1273 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1637-00 July 06 • Low loss thin IGBT die • Highly rugged SPT design • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions

12M1280

Abstract: 5SMY12M1280
Contextual Info: VCE IC = = 1200 V 150 A IGBT-Die 5SMY 12M1280 Die size: 13.5 x 13.5 mm Doc. No. 5SYA 1322-02 Dez 12 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values

12M1A

Abstract: piezoelectric contact accelerometer ISA-RP-37
Contextual Info: Piezoelectric Accelerometer - OEM ENDEVCO Model 12M1A MODEL 12M1A • • • • For SMT Installation Light Weight 85 mg High Output Efficiency Low Cost/OEM Applications DESCRIPTION The ENDEVCO Model 12M1A PICOCHIP is a high performance piezoelectric accelerometer packaged as a surface mount chip component.The unit is engineered for integration in

GL112M13

Abstract: GL112 GL112M
Contextual Info: 12M13 LEDs for Bar Graphic Display Array LED, Dichromatic 8 yellow-green dots and 4 red dots GL1 12M13 12-Dots • Model No. GaP GaP Yellow-green Red 12M13 ■ Features 1. 2. 3. 4. 5. Radiation shape per dots 2.2 x 5.3mm Outline dimensions 7.0 x 70.4mm

Contextual Info: VCE IC = = 1200 V 150 A IGBT-Die 5SMY 12M1280 Die size: 13.5 x 13.5 mm Doc. No. 5SYA 1322-03 04 14 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values

Contextual Info: Data Sheet, Doc. No. 5SYA 1318-01 11 06 5SMY 12M1721 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: alpha-Si and Silicon Nitride plus Polyimide Maximum rated values Parameter

Polyimide

Abstract: 12M1280
Contextual Info: VCE IC = = 1200 V 150 A IGBT-Die 5SMY 12M1280 Die size: 13.5 x 13.5 mm Doc. No. 5SYA 1322-01 Nov 10 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values

12M1A

Abstract: piezoelectric contact accelerometer ISA-RP-37
Contextual Info: Model 12M1A Piezoelectric accelerometer - OEM Features Description • Low cost/OEM applications • High output efficiency • Light weight 120 mg • For SMT installation The Endevco model 12M1A Picochip is a high performance piezoelectric accelerometer packaged as a surface mount

12M1B

Abstract: piezoelectric contact accelerometer 12M1B piezoelectric accelerometer piezoelectric accelerometer oem accelerometer ISA-RP-37
Contextual Info: Model 12M1B Piezoelectric accelerometer - OEM Features Description • Low cost/OEM applications • High output efficiency • Light weight 120 mg • For SMT installation The Endevco model 12M1B Picochip is a high performance piezoelectric accelerometer packaged as a surface mount

12M1721

Contextual Info: Data Sheet, Doc. No. 5SYA 1326-02 11 02 5SMY 12M1721 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage

5SMY 86M1730

Abstract: ac130
Contextual Info: Data Sheet, Doc. No. 5SYA 1695-03 04 14 5SMY 12M1730 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage

Contextual Info: Data Sheet, Doc. No. 5SYA 1326-03 04 14 5SMY 12M1721 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage

Contextual Info: Data Sheet, Doc. No. 5SYA 1687-02 04 14 5SLY 12M1700 Fast-Diode Die VRRM =1700 V IF = 300 A Fast and soft reverse-recovery Low losses High SOA Passivation: SIPOS Nitride plus Polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage

Contextual Info: HITACHI/ LINEAR DEVICES 2bE J> OOliaST 4 HA21001 M S- - T -T7 -O S -O S - VHF/UHF Tuner Use G aAs IC Features • Covers VHF and UHF frequencies • Contains local OSC FETs, double balance mixer and IF amp dual gate FET • Low noise, low distortion

Contextual Info: ^ EDI B«ctronic Designs Inc E D I8 F 1 7 6 2 5 6 C .1 45M Secondary Cache Memory Array Module 256KX176 Asynchronous Static RAM Module with TAG, TAG ECC, and DATA ECC Features The EDI8F176256C is a single array multichip Static RAMmoduleorganizedasa262,144x176bitmernory array.