12JAN09 Search Results

IRF614

Contextual Info: IRF614, SiHF614 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling Qgd (nC) 4.5 • Simple Drive Requirements Configuration

IRF720S

Abstract: SiHF720S SiHF720S-E3
Contextual Info: IRF720S, SiHF720S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V 1.8 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration Single DESCRIPTION D Third generation Power MOSFETs from Vishay provide the

IRFZ14L

Abstract: IRFZ14S SiHFZ44L IRFZ14STRL SiHFZ14L SiHFZ14L-E3 SiHFZ14S SiHFZ14S-E3 SiHFZ14STL
Contextual Info: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single D2PAK (TO-263) G G D S Advanced Process Technology Surface Mount (IRFZ14S, SiHFZ14S)

IRLZ24L

Abstract: IRLZ24S SiHLZ24L SiHLZ24L-E3 SiHLZ24S
Contextual Info: IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 5 V 0.10 Qg (Max.) (nC) 18 Qgs (nC) 4.5 Qgd (nC) 12 Configuration Single G G D S RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the

V0008

Contextual Info: VFB2028N Vishay Foil Resistors Ultra High Precision Z-Foil BGA Surface Mount Resistor 4R Network, Temperature Coefficient Tracking 0.1 ppm/°C, Load Life Ratio Stability to ± 0.01 % 100 ppm , ESD Immunity to 25 kV FEATURES • Temperature coefficient of resistance (TCR):

IRF737LC

Abstract: SiHF737LC SiHF737LC-E3 IRF737
Contextual Info: IRF737LC, SiHF737LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 300 RDS(on) (Ω) VGS = 10 V 0.75 Qg (Max.) (nC) 17 Qgs (nC) 4.8 Qgd (nC) 7.6 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve

4.5V TO 100V INPUT REGULATOR

Contextual Info: IRFR430A, IRFU430A, SiHFR430A, SiHFU430A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 1.7 Qg (Max.) (nC) 24 Qgs (nC) 6.5 Qgd (nC) Ruggedness • Fully Characterized Capacitance and Avalanche Voltage

40HFL40S02

Abstract: IRFP460 9449
Contextual Info: FCSP05H40TR Vishay High Power Products FlipKY Chip Scale Package Schottky Barrier Rectifier, 0.5 A FEATURES • Ultra low VF to footprint area • Very low profile < 0.6 mm • Low thermal resistance • Supplied tested and on tape and reel APPLICATIONS

IRLI520G

Abstract: SiHLI520G
Contextual Info: IRLI520G, SiHLI520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Logic-Level Gate Drive • RDS (on) Specified at VGS = 4 V and 5 V

SiHLZ14S

Abstract: IRLZ14 IRLZ14L IRLZ14S SiHLZ14L SiHLZ14S-E3
Contextual Info: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) (Ω) VGS = 5 V 0.20 Qg (Max.) (nC) 8.4 Qgs (nC) 3.5 Qgd (nC) 6.0 Configuration Single G G S COMPLIANT Third generation Power MOSFETs from Vishay utilize

IRFR9310

Abstract: IR*9310 IRFU9310 SiHFR9310 SiHFU9310 SiHFR9310-E3 SIHFR9310TL-E3
Contextual Info: IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 400 RDS(on) (Ω) VGS = - 10 V 7.0 Qg (Max.) (nC) 13 Qgs (nC) 3.2 Qgd (nC) 5.0 Configuration Single P-Channel Surface Mount (IRFR9310/SiHFR9310)

IRLZ34L

Abstract: IRLZ34S SiHLZ34S
Contextual Info: IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • 60 RDS(on) (Ω) VGS = 5 V 0.05 Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration • Fast Switching • Fully Avalanche Rated Single

IRFR020

Abstract: PDA56 IRFU020 SiHFR020 SIHFU020-E3 SiHFR020-E3 SiHFU020
Contextual Info: IRFR020, IRFU020, SiHFR020, SiHFU020 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V • Surface Mount (IRFR020, SiHFR020) 0.10 Qg (Max.) (nC) 25 • Available in Tape and Reel Qgs (nC) 5.8

Contextual Info: IRFI530G, SiHFI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating

SiHFD123

Contextual Info: IRFD123, SiHFD123 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 0.27 RoHS* Qg (Max.) (nC) 16 • For Automatic Insertion Qgs (nC) 4.4 • End Stackable

CRBV55BE-2110-2170

Contextual Info: RedBox M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 2110 MHz 5.0 VDC 2170 MHz Tuning Voltage: Supply Voltage: 4.75 5.0 5.25 VDC +3.0 +6.0 dBm 11 15 mA -15 Output Power: Supply Current:

Contextual Info: IRFI530G, SiHFI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating

IRFI530GPBF

Abstract: 58AB IRFI530G SiHFI530G SiHFI530G-E3
Contextual Info: IRFI530G, SiHFI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating

82991

Abstract: IRFR220TRPBF IRFR220 IRFU220 SiHFR220 SiHFR220-E3
Contextual Info: IRFR220, IRFU220, SiHFR220, SiHFU220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V 0.80 Available • Repetitive Avalanche Rated Qg (Max.) (nC) 14 • Surface Mount (IRFR220, SiHFR220) Qgs (nC)

IRF620S

Abstract: SiHF620S SiHF620S-E3
Contextual Info: IRF620S, SiHF620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) (Ω) VGS = 10 V 0.80 Qg (Max.) (nC) 14 Qgs (nC) 3.0 Qgd (nC) 7.9 Configuration Single D D2PAK • • • • • • • • Surface Mount Available in Tape and Reel

IRF624

Abstract: SiHF624 SiHF624-E3 irf624p
Contextual Info: IRF624, SiHF624 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.1 RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 2.7 • Ease of Paralleling Qgd (nC)

910.26

Abstract: IRF614S
Contextual Info: IRF614S, SiHF614S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) (Ω) VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D • • • • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating

IRF540S

Abstract: IRF540 SiHF540S IRF540SPBF SiHF540S-E3 91022
Contextual Info: IRF540S, SiHF540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration • • • • • • • • 100 VGS = 10 V 0.077 72 11 32 Single Surface Mount Available in Tape and Reel Dynamic dV/dt Rating

SiHLI520G

Contextual Info: IRLI520G, SiHLI520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Logic-Level Gate Drive • RDS (on) Specified at VGS = 4 V and 5 V