12GHZ Search Results

Contextual Info: T O SH IB A 2SK2497 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2497 SHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure : NF = 1.2dB f=12GHz • High Gain Unit in mm 2.16 ± 0.2 1.1 1.1 : Ga = 10dB (f=12GHz)

Contextual Info: NBB-302 4 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers

DC12G

Contextual Info: Elite CS-47 High Power Transfer DC-12GHz Failsafe The Type CS-47 is a long life, high performance transfer or crossover switch designed for use in 50 Ohms coaxial transmission lines. The switch is available with either failsafe or latching type actuation operating from a variaty of voltage

Contextual Info: Commercial CCS-47 High Power Transfer DC-12GHz Failsafe The Type CCS-47 is a long life, high performance transfer or crossover switch designed for use in 50 Ohms coaxial transmission lines. The switch is available with either failsafe or latching type actuation operating from a variaty of voltage supplies.

Contextual Info: NBB-310 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers LMDS/UNII/VSAT/WLAN/Cellular/DWDM

EPA025A-70

Abstract: 0466 1.5 micron
Contextual Info: Excelics EPA025A-70 DATA SHEET High Efficiency Heterojunction Power FET     6 6  '  • • • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +21.5dBm TYPICAL OUTPUT POWER 8.0dB TYPICAL POWER GAIN AT 18GHz TYPICAL 0.85dB NOISE FIGURE AND 11.0dB ASSOCIATED GAIN AT 12GHz

EFC060B

Contextual Info: Excelics EFC060B PRELIMINARY DATA SHEET Low Distortion GaAs Power FET • • • • • • • +25.0dBm TYPICAL OUTPUT POWER 10.5dB TYPICAL POWER GAIN AT 12GHz HIGH BVgd FOR 10V BIAS 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE

EFA040A-70

Abstract: PT 1132
Contextual Info: Excelics EFA040A-70 DATA SHEET Low Distortion GaAs Power FET 44 19 4 20 S S 70 D 40 NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +22.0dBm TYPICAL OUTPUT POWER 8.0dB TYPICAL POWER GAIN AT 12GHz 0.3 X 400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION

EFA080A-70

Contextual Info: Excelics EFA080A-70 DATA SHEET Low Distortion GaAs Power FET 44 19 4 20 S S 70 D 40 NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +23.5dBm TYPICAL OUTPUT POWER 7.0 dB TYPICAL POWER GAIN AT 12GHz 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION

Contextual Info: NBB-302 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers LMDS/UNII/VSAT/WLAN/Cellular/DWDM

Contextual Info: Commercial CCS-32 High Power DC-12GHz SPDT Switch Failsafe The CCS-32 is a broadband, SPDT Switch designed to switch microwave signals from a common input to either of two outputs. Designed for 50 Ohms transmission lines. The switch is available with either failsafe or latching type actuators operating

Contextual Info: Elite CS-32 High Power DC-12GHz SPDT Switch Failsafe The CS-32 is a broadband, SPDT Switch designed to switch microwave signals from a common input to either of two outputs. Designed for 50 Ohms transmission lines. The switch is available with either failsafe or latching type actuators operating

Coaxial Switches

Abstract: CCR-39S
Contextual Info: Series CCR-39S COAX SWITCHES Multi-Throw DC-12 GHz, SP7T & SP8T Latching Coaxial Switch PART NUMBER DESCRIPTION CCR-39S Commercial Latching Multi-throw, DC-12GHz The CCR-39S is a broadband, multi-throw, electromechanical coaxial switch designed to switch a

LTA 703 S

Abstract: amplifier shf
Contextual Info: GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE FIELD EFFECT TRANSISTOR 2SK2331 U nit in mm SHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure : NF = 0.45dB f=12GHz • High Gain : Ga = lld B (f= 12GHz) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

eudyna GaAs FET RF Transistor

Contextual Info: FHX13X, FHX14X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) High Associated Gain: 13.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX13X, FHX14X are Super High Electron Mobility Transistor

EFA018A

Contextual Info: EFA018A Low Distortion GaAs Power FET FEATURES • • • • • • • • VERY HIGH fmax: 100GHz +18.5dBm TYPICAL OUTPUT POWER 11.5dB TYPICAL POWER GAIN AT 12GHz TYPICAL 1.1dB NOISE FIGURE AND 10.5dB ASSOCIATED GAIN AT 12GHz 0.3 X 180 MICRON RECESSED “MUSHROOM” GATE

EFC240B

Contextual Info: EFC240B Low Distortion GaAs Power FET FEATURES • • • • • • • 960 50 +31.0dBm TYPICAL OUTPUT POWER 8.5dB TYPICAL POWER GAIN AT 12GHz HIGH BVgd FOR 10V BIAS 0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE

FHX04X

Abstract: FHX04 FHX05X FHX06X GaAs FET HEMT Chips hemt low noise die
Contextual Info: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility

1-8GHz pass band

Contextual Info: JXWBLB-T-BP-12000-2000-9CSMF 12GHz Cavity Band Pass Filter Test report is for reference only. TEST REPORT For JXWBLB-T-BP-12000-2000-9CSMF 1 JXWBLB-T-BP-12000-2000-9CSMF 12GHz Cavity Band Pass Filter Technical Specification Center Frequency[f0] GHz 12 1dB Bandwidth(GHz)

Contextual Info: Elite CS-32 High Power DC-12GHz SPDT Switch Failsafe The CS-32 is a broadband, SPDT Switch designed to switch microwave signals from a common input to either of two outputs. Designed for 50 Ohms transmission lines. The switch is available with either failsafe or latching type actuators operating

Contextual Info: 1/3 SMD Inductors(Coils) For High Frequency(Multilayer) Conformity to RoHS Directive MLK Series MLK0603 FEATURES • Supports operating frequency bands of up to 12GHz with nominal inductance values from 1 to 33nH. • The gigaspiral multilayer structure reduces self-resonant

Contextual Info: 1/3 SMD Inductors(Coils) For High Frequency(Multilayer) Conformity to RoHS Directive MLK Series MLK0603 FEATURES • Supports operating frequency bands of up to 12GHz with nominal inductance values from 1 to 33nH. • The gigaspiral multilayer structure reduces self-resonant

Contextual Info: Elite CS-32 High Power DC-12GHz SPDT Switch Latching The CS-32 is a broadband, SPDT Switch designed to switch microwave signals from a common input to either of two outputs. Designed for 50 Ohms transmission lines. The switch is available with either failsafe or latching type actuators operating

Contextual Info: Commercial CCS-32 High Power DC-12GHz SPDT Switch Failsafe The CCS-32 is a broadband, SPDT Switch designed to switch microwave signals from a common input to either of two outputs. Designed for 50 Ohms transmission lines. The switch is available with either failsafe or latching type actuators operating