12F1200 Search Results

Contextual Info: VRRM = IF = 1200 V 75 A Diode-Die 5SLY 12F1200 Die size: 7.4 x 7.4 mm Doc. No. 5SYA 1682-01 Dez 12 •    Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1

Contextual Info: VRRM = IF = 1200 V 75 A Diode-Die 5SLY 12F1200 Die size: 7.4 x 7.4 mm Doc. No. 5SYA 1682-02 04 14 •    Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1

12F1200

Contextual Info: VRRM = IF = 1200 V 75 A Diode-Die 5SLY 12F1200 Die size: 7.4 x 7.4 mm Doc. No. 5SYA 1682-00 Nov 09 • • • • Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1

5sya1636-01

Contextual Info: VCE IC = = 1200 V 75 A IGBT-Die 5SMY 12J1200 Die size: 10.2 x 10.2 mm Doc. No. 5SYA1636-01 Sep 06 • Ultra low loss thin IGBT die • Highly rugged SPT+ design • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions

EATON CM20A

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Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

IGBT abb

Contextual Info: VCE IC = = 1200 V 150 A IGBT-Die 5SMY 12M1200 Die size: 13.5 x 13.5 mm Doc. No. 5SYA1639-01 Sep 06 • Ultra low loss thin IGBT die • Highly rugged SPT+ design • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions

Contextual Info: VCE IC = = 1200 V 75 A IGBT-Die 5SMY 12J1200 Die size: 10.2 x 10.2 mm Doc. No. 5SYA 1636-00 July 06 • Ultra low loss thin IGBT die • Highly rugged SPT+ design • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions

Contextual Info: VCE IC = = 1200 V 75 A IGBT-Die 5SMY 12J1280 Die size: 10.2 x 10.2 mm Doc. No. 5SYA 1321-01 Nov 10 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values

132102

Contextual Info: VCE IC = = 1200 V 75 A IGBT-Die 5SMY 12J1280 Die size: 10.2 x 10.2 mm Doc. No. 5SYA 1321-02 Dez 12 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values

Contextual Info: VCE IC = = 1200 V 75 A IGBT-Die 5SMY 12J1280 Die size: 10.2 x 10.2 mm Doc. No. 5SYA 1321-03 04 14 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values

Polyimide

Abstract: 12M1280
Contextual Info: VCE IC = = 1200 V 150 A IGBT-Die 5SMY 12M1280 Die size: 13.5 x 13.5 mm Doc. No. 5SYA 1322-01 Nov 10 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values