12E MARKING Search Results

Contextual Info: Choke Coils Choke Coils Pin terminal 09D, 11D, 12D, 16B, 18B, 10E, 12E, 15E, 18E Series: Type: Type 09D Type 11D Type 12D Type 16B Type 18B Type 10E–L Type 12E–L Type 15E–L Type 18E–L Pin terminal inductors featuring small size and high performance

Contextual Info: Choke Coils Choke Coils Pin terminal 09D, 11D, 12D, 16B, 18B, 10E, 12E, 15E, 18E Series: Type: Type 09D Type 11D Type 12D Type 16B Type 18B Type 10E–L Type 12E–L Type 15E–L Type 18E–L Pin terminal inductors featuring small size and high performance

Si4646DY

Abstract: SI4646DY-T1-E3 si4646
Contextual Info: New Product Si4646DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES • SkyFET Monolithic TrenchFET Power PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0115 at VGS = 10 V 12e 0.0145 at VGS = 4.5 V 12e VDS (V) 30 Qg (Typ.) MOSFET and Schottky Diode

Contextual Info: New Product Si4646DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0115 at VGS = 10 V 12e 0.0145 at VGS = 4.5 V 12e VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • SkyFET Monolithic TrenchFET® Power

Contextual Info: New Product Si4646DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0115 at VGS = 10 V 12e 0.0145 at VGS = 4.5 V 12e VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • SkyFET Monolithic TrenchFET® Power

Contextual Info: New Product Si4646DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0115 at VGS = 10 V 12e 0.0145 at VGS = 4.5 V 12e VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • SkyFET Monolithic TrenchFET® Power

0868 diode

Abstract: Si4646DY-T1-E3
Contextual Info: New Product Si4646DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0115 at VGS = 10 V 12e 0.0145 at VGS = 4.5 V 12e VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • SkyFET Monolithic TrenchFET® Power

Contextual Info: ZC2812E ZC2813E SOT23 DUAL SCHOTTKY BARRIER DIODES ISSUE 3 -NOVEMBER 1995_ Q_ L . . . 1 •fr 2 3 3 2 SOT23 ZC2813E ZC2812E Device Common Anode Series Type 13E 12E Part Marking ABSOLUTE MAXIMUM RATINGS. PARAMETER

ignition module

Abstract: DO-204AL J-STD-002 RGP0212E RGP02-12E RGP02-20E
Contextual Info: RGP02-12E thru RGP02-20E Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency

RGP02-15

Abstract: ignition module
Contextual Info: RGP02-12E thru RGP02-20E Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction SUPERECTIFIER • Fast switching for high efficiency

RGP02-15

Abstract: DO-204AL J-STD-002 RGP02-12E RGP02-20E ignition module
Contextual Info: RGP02-12E thru RGP02-20E Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction SUPERECTIFIER • Fast switching for high efficiency

marking 54 sot23

Abstract: ZC2812
Contextual Info: ZC2812E ZC2813E SOT23 DUAL SCHOTTKY BARRIER DIODES IS S U E 3 -NOVEMBER 1995_ Q _ 1. 1 1 3 3 - i XX XX 2 ' 2 SOT23 ZC2813E ZC2812E Device Common Anode Series Type 13E 12E Part Marking ABSOLUTE MAXIMUM RATINGS, PA RA M ETER SYM BO L

ignition module

Contextual Info: RGP02-12E thru RGP02-20E Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency ed* t n e Pat

motorola g18 pin configration

Abstract: lcd power board schematic APS 254 lcd power board schematic APS 252 GR-1400 2c39 386D pin configuration TCS 3414 HT 12E APPLICATION aph3 4312 020 36643
Contextual Info: PHAST -12E Device Programmable, High-Performance ATM/PPP/TDM SONET/SDH Terminator for Level 12 with Enhanced Features TXC-06212 DATA SHEET • Supports simultaneous termination of ATM, POS, and TDM Time Division Multiplexed, e.g., VT1.5, VC-4 etc. traffic

ELC06D152E

Abstract: ELC10D181E ELC18B122L ELC10D221E ELC15E101L ELC10D3R3E ELC18B100L ELC18B152L ELC06D2R2E ELC06D2R7E
Contextual Info: Choke Coils Choke Coils Japan Singapore Indonesia Pin terminal 06D, 09D, 10D, 12D, 16B, 18B 10E, 12E, 15E, 18E Series: Type: Type 06D Type 09D Type 10D Pin terminal inductors featuring small size and high performance Industrial Property: Patents 1 pending

SOT23R

Abstract: 12E MARKING ZC2812E wa sot23 SOT23 WA marking 54 sot23 DSA003721
Contextual Info: ZEl SOT23 DUAL SCHOTTKY BARRIER DIODES MUE 3- NOVEWER 1995 1 h f+ 23 32 ZC2tl13E ——— ZC2812E ————— Commo,? Anodl —— — k~ Operating and Storage RATINGS. Temperature Type -. 12E Part Marking r Range Device ——. Series — 1:4E ABSOLUTE MAXIMUM

RWR82

Abstract: W82S
Contextual Info: INCH-POUND MIL-PRF-39007/12F 17 October 2008 SUPERSEDING MIL-PRF-39007/12E 3 July 1997 PERFORMANCE SPECIFICATION RESISTOR, FIXED, WIRE-WOUND POWER TYPE , NONESTABLISHED RELIABILITY, ESTABLISHED RELIABILITY, AND SPACE LEVEL STYLE RWR82 This specification is approved for use by all Departments

B40 35-10

Abstract: ELC09D102 ELC06D2R2E ELC06D2R7E ELC06D3R3E ELC06D3R9E ELC06D4R7E ELC06D5R6E ELC06D6R8E ELC12D102E
Contextual Info: Choke Coils Choke Coils Series: Type: Japan Singapore Indonesia Pin terminal 06D, 09D, 10D, 12D, 16B, 18B 10E, 12E, 15E, 18E Type 06D Type 09D Type 10D Pin terminal inductors featuring small size and high performance Type 12D • Features Type 16B Type 18B

MMBR2857

Abstract: sot23 transistor marking 12E MMBR2857 MOTOROLA BR2857
Contextual Info: 12E D I b3fc,7aS4 DQÔ7EÛ1 3 | MOTOROLA SC MOTOROLA XSTRS/R F - - SEM ICONDUCTOR TECHNICAL DATA MMBR2857 The RF Line Ole Source Same as 2N2857 IMPN Silicon High Frequency Transistor . designed primarily for use in high-gain, low-noise amplifier, oscillator

2SC3173

Contextual Info: SANYO SEMICONDUCTOR CORP 12E » I 7 CH 7 0 7 L , 0004311 7 T ' 53-11 2SC3173 NPN Epitaxial Planar Silicon Transistor 201OA C R T Display Horizontal Deflection Output Applications 1309B Features: ’ High switching speed • Especially suited for use in high-definition CRT display Vcc=6 to 12V

MMBZ5227B 8B

Abstract: sg 81a 25CC MMBZ5226B MMBZ5227B MMBZ5228B MMBZ5229B MMBZ5231B MMBZ5232B MMBZ5233B
Contextual Info: MOTOROLA SC -CDIODES/OPTO} 12E D I L3b72SS QOTTìDb d | '-Il-07 MMBZ5226B thru MMBZ5257B MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA CASE 318-05, STYLE 8 SOT-23 TO-236AA/AB THERMAL CHARACTERISTICS Characteristic Sym bol M ax Unit Pd 225 mW 1.8 m wrc

NEC D765

Abstract: 8272 floppy disk controller block diagram of 8272 floppy disk controller 82C226 8272A floppy disk controller block diagram NEC uPA 63 H floppy disk controller 8272 CHIPS TECHNOLOGIES MR 250-2.-5 NS16550
Contextual Info: CH I P S . im a £ TE C H N O L O G I E S INC 12E D | SO'ìflllb 0 0 0 1501 b | u u u m .,u iu C H I ir ^ S -T -5 2 -3 3 -D 5 82C607 M ultifunction Controller Single Chip UART and Analog Data Separator

BCW60AL

Abstract: BCW60BL BCW60CL BCW60DL MPS3904 sot-23 Marking KN
Contextual Info: 12E D I b3f ci 7254 OQflSÖTO ? | MAXIMUM RATINGS Symbol Value U nit Collector-Emitter Voltage Rating v CEO 32 V Collector-Base Voltage VCBO 32 V Emitter-Base Voltage Ve b o 5.0 V ic 100 mAdc Symbol Max U nit PD 225 mW 1.8 mW/°C Roja Pd 556 °C/W Collector Current — Continuous

MRF522

Abstract: SE317 318b MRFC521
Contextual Info: 12E D I MOTOROLA b3b7554 GGÖ7732 MOTOROLA SC T | XSTRS/R F SE M IC O N D U C T O R mmmmm—mmimmmmm TECHNICAL DATA MRF521 MRFC521 MRF522 MRF524 MRF5211,L The RF Line P N P Silicon High-Frequency Transistors . designed primarily for use in the high-gain, low-noise small-signal amplifiers for