12L4500 Search Results

12L4500 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
5SLY12L4500 Contextual Info: VCE IC = = 4500 V 42 A IGBT-Die 5SMY 12L4500 Die size: 12.8 x 12.8 mm Doc. No. 5SYA 1310-01 May 08 • • • • Ultra low loss IGBT die Highly rugged SPT+ design Large front bondable area Passivation: SIPOS and silicon nitride plus polyimide Maximum rated values	Original	12L4500 CH-5600 5SLY12L4500	PDF
848 diode Contextual Info: VRRM = IF = 4500 V 84 A Fast-Diode Die 5SLY 12L4500 Die size: 12.9 x 12.9 mm Doc. No. 5SYA 1675-01 May 08 • • • • Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS and silicon nitride plus polyimide Maximum rated values 1	Original	12L4500 CH-5600 848 diode	PDF
abb traction motor Abstract: diode 6.5 kv 5SMY 12M4500 76E-12 IGBT 6500 V 86M1280 5SMY86J1280 ABB IGBT 76J1280 76M12 Contextual Info: IGBT and Diode dies ABB Semiconductors ABB IGBT and Diode dies from stateof-the-art SPT planar technology platform. Fig.1 Un-sawn wafer, sawn wafer die on frame and pick-and-place dies in waffle-packs ABB Semiconductor has a well established reputation in the	Original	CH-5600 1768/138a 29palms abb traction motor diode 6.5 kv 5SMY 12M4500 76E-12 IGBT 6500 V 86M1280 5SMY86J1280 ABB IGBT 76J1280 76M12	PDF

Catalog Datasheet

Type

Document Tags

PDF

5SLY12L4500

Contextual Info: VCE IC = = 4500 V 42 A IGBT-Die 5SMY 12L4500 Die size: 12.8 x 12.8 mm Doc. No. 5SYA 1310-01 May 08 • • • • Ultra low loss IGBT die Highly rugged SPT+ design Large front bondable area Passivation: SIPOS and silicon nitride plus polyimide Maximum rated values

Original

12L4500 CH-5600 5SLY12L4500

PDF

848 diode

Contextual Info: VRRM = IF = 4500 V 84 A Fast-Diode Die 5SLY 12L4500 Die size: 12.9 x 12.9 mm Doc. No. 5SYA 1675-01 May 08 • • • • Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS and silicon nitride plus polyimide Maximum rated values 1

Original

12L4500 CH-5600 848 diode

PDF

abb traction motor

Abstract: diode 6.5 kv 5SMY 12M4500 76E-12 IGBT 6500 V 86M1280 5SMY86J1280 ABB IGBT 76J1280 76M12
Contextual Info: IGBT and Diode dies ABB Semiconductors ABB IGBT and Diode dies from stateof-the-art SPT planar technology platform. Fig.1 Un-sawn wafer, sawn wafer die on frame and pick-and-place dies in waffle-packs ABB Semiconductor has a well established reputation in the

Original

CH-5600 1768/138a 29palms abb traction motor diode 6.5 kv 5SMY 12M4500 76E-12 IGBT 6500 V 86M1280 5SMY86J1280 ABB IGBT 76J1280 76M12

PDF