128K X 8 Search Results
128K X 8 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TN28F010-150-G |
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28F010 - 128K X 8 Flash |
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MR28F010-90 |
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28F010 - 128K X 8 Flash, Mil Temp |
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MR28F010-90/R |
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28F010 - 128K X 8 Flash, Mil Temp |
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MD28F010-90 |
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28F010 - 128K X 8 Flash, Mil Temp |
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MD28F010-20/B |
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28F010 - 128K X 8 Flash, Mil Temp |
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128K X 8 Price and Stock
Displaytech Ltd 64128KX FC BW-3LCD Graphic Display Modules & Accessories 128X64 FSTN FPC Interface Wht Backlight |
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64128KX FC BW-3 | 935 |
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Vishay Precision Group Inc MAX128K00BMetal Foil Resistors - Through Hole MAX128K00B 5 PPM |
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MAX128K00B |
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Bel Power Solutions 20IMX4-1212-8KIsolated DC/DC Converters - Through Hole POWER SUPPLY;DC-DC;IN 8.4to36V;OUT +12/-12V;0.17/0.17A;OPTION K;;; |
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20IMX4-1212-8K |
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Displaytech Ltd 64128KX FC BW-RGBLCD Graphic Display Modules & Accessories 128X64 FSTN FPC Interface RGB Backlight |
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64128KX FC BW-RGB |
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Cornell Dubilier Electronics Inc 128KXM050MAluminum Electrolytic Capacitors - Radial Leaded 1200uF 50V 20% tol. ELECTROLYTIC |
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128KXM050M |
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128K X 8 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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79LV0832
Abstract: Maxwell 79lv0832
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Original |
79LV0832 32-Bit) I/016-23 79LV0832 32-bit Maxwell 79lv0832 | |
Contextual Info: 79LV0408 Low Voltage 4 Megabit 512k x 8-bit EEPROM CE1 CE2 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 I/O0-7 Logic Diagram Memory FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural |
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79LV0408 A0-16 | |
Contextual Info: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE2 CE1 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 Logic Diagram FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness: |
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79C0408 A0-16 | |
79LV0408
Abstract: Maxwell 79lv0408
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Original |
79LV0408 A0-16 79LV0408 Maxwell 79lv0408 | |
Contextual Info: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE2 CE1 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 Memory I/O0-7 Logic Diagram FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation |
Original |
79C0408 A0-16 | |
79LV0408Contextual Info: 79LV0408 Low Voltage 4 Megabit 512k x 8-bit EEPROM CE1 CE2 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 I/O0-7 Logic Diagram Memory FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural |
Original |
79LV0408 A0-16 79LV0408 | |
transistor comparison data sheetContextual Info: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE2 CE1 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 Memory I/O0-7 Logic Diagram FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation |
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79C0408 A0-16 transistor comparison data sheet | |
Contextual Info: 79LV0408 Low Voltage 4 Megabit 512k x 8-bit EEPROM CE1 CE2 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 I/O0-7 Logic Diagram Memory FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural |
Original |
79LV0408 A0-16 | |
Contextual Info: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE2 CE1 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 Memory I/O0-7 Logic Diagram FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation |
Original |
79C0408 A0-16 79C0408 | |
Contextual Info: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE1 CE2 CE3 CE4 RES R/B WE OE 79C0408 A0-16 128K x 8 128K x 8 128K x 8 128K x 8 I/O0-7 FEATURES DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness: |
Original |
79C0408 A0-16 | |
Contextual Info: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE1 CE2 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 I/O0-7 DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness (RP Package): |
Original |
79C0408 A0-16 | |
Contextual Info: CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual Port RAM 1CY7C0851V CY7C0852V CY7C0851V/CY7C0852V CY7C0831V/CY7C0832V PRELIMINARY 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual Port RAM |
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CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3 64K/128K 128K/256K 1CY7C0851V CY7C0852V | |
9l reset
Abstract: CY7C0852V-133AC CY7C09289V CY7C09369V CY7C09379V
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CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3 64K/128K 128K/256K CY7C0851V/CY7C0852V CY7C0831V/CY7C0832V 9l reset CY7C0852V-133AC | |
CY7C0837AV
Abstract: CY7C09289V CY7C09369V CY7C09379V CY7C09389V JEDEC 144ball FBGA BW144
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CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389VFLEx18TM 64K/128K 128K/256K CY7C0837AV CY7C0830AV/CY7C0831AV CY7C0837AV CY7C09389V JEDEC 144ball FBGA BW144 | |
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1.0mm pitch BGAContextual Info: CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389VFLEx18 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM CY7C0837AV CY7C0830AV/CY7C0831AV CY7C0832AV/CY7C0833AV FLEx18™ 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM |
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CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389V FLEx18TM 64K/128K 128K/256K CY7C0837AV 1.0mm pitch BGA | |
BW144
Abstract: BB144 JEDEC 144ball FBGA
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Original |
CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389V FLEx18TM 64K/128K 128K/256K CY7C0837AV BW144 BB144 JEDEC 144ball FBGA | |
1.0mm pitch BGAContextual Info: CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389VFLEx18 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM CY7C0837AV CY7C0830AV/CY7C0831AV CY7C0832AV/CY7C0833AV FLEx18™ 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM |
Original |
CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389V FLEx18TM 64K/128K 128K/256K CY7C0837AV 1.0mm pitch BGA | |
Contextual Info: 79LV0408 Low Voltage 4 Megabit 512k x 8-bit EEPROM CE1 CE2 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 I/O0-7 • • • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness: - > 100 krad (Si), depending upon space mission |
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79LV0408 A0-16 | |
14560
Abstract: cd 5151
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EDI8F32128V EDI8F32128V 8F32128V 038-8F32128V 039-8F32128V EDI8F32128V10MMC EDI8F32128V12MMC EDI8F32128V10MZC 14560 cd 5151 | |
Contextual Info: AK632128W/AK632128Z 128K x 32 SRAM MODULE ACCUTEK MICROCIRCUIT DESCRIPTION The Accutek AK632128 high density memory module is a static random access memory organized in 128K x 32 bit words. The assembly consists of four high speed 128K x 8 SRAMs in surface |
OCR Scan |
AK632128W/AK632128Z AK632128 64-Pin 0107b47 | |
TSOP 1376
Abstract: MX27C2048 MX27C2100
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Original |
MX27C2100/27C2048 8/128K MX27C2048, MX27C2100, MX27C2048) MX27C2100/2048 MX27C2100) TSOP 1376 MX27C2048 MX27C2100 | |
L7C108WC25
Abstract: MT5C1008 l7c109wi25
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Original |
L7C108/109 MIL-STD-883, CY7C108/109, IDT71024/71B024, MT5C1008, MCM6226A/62L26A, CXK581020 32-pin L7C108WC25 MT5C1008 l7c109wi25 | |
Contextual Info: CY14V101LA CY14V101NA PRELIMINARY 1 Mbit 128K x 8/64K x 16 nvSRAM 1 Mbit (128K x 8/64K x 16) nvSRAM Features Functional Description • 25 ns and 45 ns Access Times ■ Internally Organized as 128K x 8 (CY14V101LA) or 64K x 16 (CY14V101NA) ■ Hands Off Automatic STORE on Power Down with only a small |
Original |
CY14V101LA CY14V101NA 8/64K CY14V101LA/CY14V101NA | |
CY14B101LA-SZ45XI
Abstract: CY14B101LA-SZ25XI
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Original |
CY14B101LA CY14B101NA 8/64K CY14B101LA/CY14B101NA CY14B101LA-SZ45XI CY14B101LA-SZ25XI |