1241 TRANSISTOR Search Results

Contextual Info: KSC3076 KSC3076 Power Amplifier Applications • Low Collector-Emitter Saturation Voltage • Complement to KSA 1241 1 I-PACK 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO

1241 transistor

Abstract: KSC3076 transistor a 1241
Contextual Info: KSC3076 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • Low Collector Emitter Saturation Voltage • Complement to KSA 1241 I-PACK ABSOLUTE MAXIMUM RATINGS Rating Unit Collector Base Voltage Characteristic Symbol VCBO 50 V Collector Emitter Voltage

KSC3076

Contextual Info: KSC3076 KSC3076 Power Amplifier Applications • Low Collector-Emitter Saturation Voltage • Complement to KSA 1241 1 I-PACK 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO

305 d-pack

Contextual Info: FJD3076 FJD3076 Power Amplifier Applications • Low Collector-Emitter Saturation Voltage • Complement to KSA 1241 D-PACK 1 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO

a1241

Abstract: k 1241 transistor SA1241
Contextual Info: KSC3076 NPN EPITAXIAL SILICO N TRANSISTOR POW ER AM PLIFIER APPLICATIONS • Low Collector Emitter Saturation Voltage • Complement to K S A 1241 ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit Collector Base Voltage Symbol VcBO 50 V Collector Emitter Voltage

Contextual Info: KSC3076 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • Low Collector Emitter Saturation Voltage • Complement to KSA 1241 ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol j C o lle cto r Base Voltage C o lle cto r E m itter Voltage Vceo

darlington bd647

Abstract: TL 2262 lg bd645 tic 2260 BD649
Contextual Info: File Num ber 1241 BD643, BD645, BD647, BD649 8-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 45-60-80 Volts, 70 Watts Gain of 750 at 3A O A pplications: t Features: m Power switching Hammer drivers • Operates from IC without predriver Series and shunt

SOT 23 AJW

Abstract: ATF-54143 ATF55143 ATF-55143 LL1608-F2N7S LL1608-FH10NK LL1608-FH2N7S LL1608-FH5N6K agilent pHEMT transistor agilent pHEMT transistor LNA LOW NOISE AMPLIFIER
Contextual Info: High Intercept Low Noise Amplifier for 1.9 GHz PCS and 2.1 GHz W-CDMA Applications using the ATF-55143 Enhancement Mode PHEMT Application Note 1241 Introduction Agilent Technologies’ ATF-55143 is a low noise enhancement mode PHEMT designed for use in low

Contextual Info: KSC3076 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER A PPLICATIO NS • Low C ollector Em itter Saturation Voltage • C om plem ent to KSA 1241 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector Base Voltage C haracteristic VcBO Sym bol 50 V C ollector Em itter Voltage

BD645

Abstract: BD649 BD647 darlington bd647 D 17275 n69s BD643 B13 transistors
Contextual Info: G DI E SOLI» STATE 3875081 G E SOLID D[f| 3Û7S0Ô1 0017573 L> 0 1 E ~ 17273 STATE ~ _ Darlington Power Transistore File Number 1241 BD643, BD645, BD647, BD649 8-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 45-60-80 Volts, 70 Watts

NEC lcd backlight inverter 65pw061

Abstract: E170632 FCC16202AB NL6448BC20-20 DF9-31S-1V NEC E170632
Contextual Info: TFT COLOR LCD MODULE NL6448BC20-20 17cm 6.5 Type VGA DATA SHEET DOD-PD-1362 (1st edition) This DATA SHEET is updated document from PRELIMINARY DATA SHEET DOD-PD-1241(1). All information is subject to change without notice. Please confirm the sales representative before

Contextual Info: KSC3076 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • Low C ollecto r E m itter Saturation Voltage • C om plem ent to KSA 1241 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector Base Voltage Characteristic V cbO Sym bol 50 V C ollecto r E m itter Voltage

B0643

Abstract: d 17275 BD649C
Contextual Info: G DI E SOLI» STATE 3875081 G E SOLID File N um ber D[f| 3Û7S0Ô1 0017573 L> Ò 1É STATE 17273 ~ _ Darlington Power Transistore 1241 BD643, BD645, BD647, BD649 8-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 45-60-80 Volts, 70 Watts

2SD1340P

Abstract: 2SD1340
Contextual Info: 2 S D 1340P No.1241 SANYO NPN Triple Diffused Planar Type Silicon Transistor For Horizontal Output Built-in Damper Diode Features: • High Breakdown Voltage and High Reliability. • H i g h S w i t c h i n g Speed. Absolute Maximum Ratings at T a = 2 5 ° C

ATF-55143

Abstract: agilent pHEMT transistor LNA LOW NOISE AMPLIFIER SOT 23 AJW ATF-54143 ATF55143 LL1608-F2N7S LL1608-FH10NK LL1608-FH2N7S LL1608-FH5N6K knife edge isolation
Contextual Info: High Intercept Low Noise Amplifier for 1.9 GHz PCS and 2.1 GHz W-CDMA Applications using the ATF-55143 Enhancement Mode PHEMT Application Note 1241 Introduction Avago Technologies’ ATF-55143 is a low noise enhancement mode PHEMT designed for use in low cost commercial applications in the VHF through 6 GHz

Contextual Info: MSSI121/241/241B M O S E L V IT E L IC INSTANT VOICE ROM Features • Single power supply can operate at 2.4V through 6V. ■ Current output can drive 8 ohm speaker with a transistor, Vout can drive buzzer directly. ■ The voice content is stored for 7-12 seconds for

2SA1241

Abstract: a1241 A 1241 transistor 2sa1241 1241 transistor
Contextual Info: TOSHIBA TRANSISTOR SEM ICONDUCTOR TOSHIBA TECHNICAL DATA 2 S A 1 241 SILICON PNP EPITAXIAL TYPE PCT PROCESS (2SA1241) POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • • • Low Collector Saturation Voltage • VCE(sat)“ —0.5V (Max.) (Iç;= -1A )

LT1244

Contextual Info: I T L l f l t A C _ LT1241 Series TECHNOLOGY High Speed Current M ode Pulse Width Modulators KRTUiKS DCSCRIPTIOn • Low Start-Up Current: <250|iA ■ 50ns Current Sense Delay ■ Current Mode Operation: To 500kHz ■ Pin Compatible with UC1842 Series

Contextual Info: 19- 1155; Rev 1; 9/97 +2.7V, Low -Pow er, 12-B it S e ria l ADCs In 8-Pin SO Power consum ption is only 37mW Vd d = 3V at the 73ksps maximum sam pling speed. A 2 mA shutdown mode reduces power at slower throughput rates. The MAX1240 has an interna! 2.5V reference, while the

Contextual Info: SIEMENS BF 660W PNP Silicon RF Transistor ’ For VHF oscillator applications Type Marking BF 660W LEs Ordering Code Pin Configuration Q62702-F1568 1=B Package 2= E 3=C SOT-323 Maximum Ratings Parameter Symbol Collector-emitter voltage Values '/CEO 30 Collector-base voltage

Contextual Info: March 1997 DataSheet microelectronics group * r Lucent Technologies Bell Labs Innovations Quad Differential Drivers DG1A, DP1A, DGLA, PNGA, PNPA, and PPGA Features Description • Pin-equivalent to the general-trade 26LS31 device, with improved speed, reduced power consumption,

Contextual Info: Preliminary Data Sheet + March 1997 microelectronics ~ ~ group Lucent Technologies Bell Labs Innovations Quad Differential Drivers DG1A, DP1A, DGLA, PNGA, PNPA, and PPGA Features Description • Pin-equivalent to the general-trade 26LS31 device, with improved speed, reduced power consumption,

Contextual Info: Data Sheet July 1998 group Lucent Technologies Bell Labs Innovations Quad Differential Drivers DG1A, DP1A, DGLA, PNG A, PNPA, and PPGA Features • Pin-equivalent to the general-trade 26LS31 device, with improved speed, reduced power consumption, and significantly lower levels of EMI

lucent btk1a16g

Contextual Info: Preliminary Data Sheet March 1997 microelectronics group Lucent Technologies Bell Labs Innovations Dual Differential Transceivers TK1A,TL1A, andTMIA Features Description Driver Features TheTKI A, TL1A, and TM1A devices are dual differ­ ential transceiver circuits that transmit and receive