1233 SMD Search Results

1233 smd

Contextual Info: ELMA Your Solution Partner Cermet-Potentiometer IA llg e m e in e Cermet Potentiometers H in w eise und Technische D aten General Remarks and Technical Data siehe Seite 7 I S pezifische Technische D aten S p e cific Technical Data Spannung: 200V AC/DC Voltage: 200V AC/DC

Wurth 744 224

Abstract: Wurth 744 841 247 wurth 744 203 744 252 510 wurth wurth 744 760 312 str 1195 wurth 744 137 LF 842 626 smd 1 928 498 839 WuRTH 744 311
Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : LF 7488920245 RoHS compliant SMD Antenne WE-MCA Chip-Antenna WE-MCA DATUM / DATE : 2004-10-11 A Mechanische Abmessungen / dimensions:

3773 SMD

Abstract: 142012 132101 4221 739 76118 34695 1815 smd 58779
Contextual Info: .049 .008 .079 .008 ELECTRICAL CHARACTERISTICS: R25C=10,000 OHMS 1% BETA=3435 OPERATING TEMPERATURE: -40C TO 125C THERMAL TIME CONSTANT: 60 SEC MAX DISSIPATION CONSTANT: 4 mW/C POWER RATING: 400mW AT 25C, DERATE TO 125 NOTES: SMD 0805 PACKAGE .047 .008 DRAWN

cmpak6

Abstract: SMD MARKING RFC 1SV70 TBB1010 TBB1010KMTL-E
Contextual Info: TBB1010 Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier REJ03G0844-0500 Rev.5.00 Aug 22, 2006 Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. High |yfs|=29mS x 2 Suitable for World Standard Tuner RF amplifier.

beta 3435

Abstract: QT06015-054 3773 SMD 142012 76118 202F NTC Thermistor 301
Contextual Info: .019 .002 .039 .002 ELECTRICAL CHARACTERISTICS: R25C=10,000 OHMS 1% BETA=3435 OPERATING TEMPERATURE: -40C TO 125C DISSIPATION CONSTANT: 2.5 mW/C MIN POWER RATING: 250mW AT 25C .019 .002 NOTES: SMD 0402 PACKAGE DRAWN INITIAL DATE BR 11/24/2009 2108 CENTURY WAY

3773 SMD

Abstract: 142012 76118 202F CMM0805
Contextual Info: .049 .008 .079 .008 ELECTRICAL CHARACTERISTICS: R25C=10,000 OHMS 2% NTC= -4.0 %/ C OPERATING TEMPERATURE: -40C TO 125C THERMAL TIME CONSTANT: 60 SEC MAX DISSIPATION CONSTANT: 4 mW/C POWER RATING: 400mW AT 25C, DERATE TO 125 NOTES: SMD 0805 PACKAGE .047 .008

Contextual Info: GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM Silicon IGBT Ignition Coil Driver REJ03G1249-0300 Rev.3.00 Jun 01, 2009 Features • Including Clamping Zener VCL = 400 V typ • Low saturation Voltage VCE(sat) = 1.4 V(typ) • SMD package LDPAK Outline RENESAS Package code: PRSS0004AE-A

4N35 application note

Abstract: LTV4N35 LTV4N35-V LTV 4N35 SMD LTV4N37 4N35 4N35 circuits LTV4N35M-V 4N35 applications LTV-4N35
Contextual Info: General Purpose Type Photocoupler LTV-4N35 Series/LTV-4N37 Series 4N35 Series/4N37 Series Package Dimensions High current transfer ratio CTR : MIN.100% at IF=10mA, VCE=10V Response time (ton : TYP, 3 s at VCE=10V, IC=2mA, RL=100 ) Input-output isolation voltage :

Contextual Info: Preliminary Datasheet TBB1010 R07DS0316EJ0600 Previous: REJ03G0844-0500 Rev.6.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

HVU202A

Abstract: TBB1016 TBB1016RMTL-E
Contextual Info: TBB1016 Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier REJ03G1327-0200 Rev.2.00 Aug 22, 2006 Features • • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Very useful for total tuner cost reduction.

Contextual Info: Preliminary Datasheet TBB1010 R07DS0316EJ0600 Previous: REJ03G0844-0500 Rev.6.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

MOS TECHNOLOGY INC

Abstract: 1SV70 TBB1004 TBB1004DMTL-E
Contextual Info: TBB1004 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier REJ03G0842-1100 Rev.11.00 Aug 22, 2006 Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Suitable for World Standard Tuner RF amplifier.

1SV70

Abstract: TBB1005 TBB1005EMTL-E
Contextual Info: TBB1005 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier REJ03G0843-0900 Rev.9.00 Aug 22, 2006 Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Suitable for World Standard Tuner RF amplifier.

smd code marking BM

Abstract: RG 56 smd diode marking BM 1SV70 TBB1002 TBB1002BMTL-E
Contextual Info: TBB1002 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier REJ03G0841-0900 Rev.9.00 Aug 22, 2006 Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Suitable for World Standard Tuner RF amplifier.

Contextual Info: Preliminary Datasheet TBB1004 R07DS0314EJ1200 Previous: REJ03G0842-1100 Rev.12.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

Contextual Info: Preliminary Datasheet TBB1002 R07DS0313EJ1000 Previous: REJ03G0841-0900 Rev.10.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

Contextual Info: Preliminary Datasheet TBB1016 R07DS0318EJ0300 Previous: REJ03G1327-0200 Rev.3.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier Features • • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

Contextual Info: Preliminary Datasheet TBB1005 R07DS0315EJ1000 Previous: REJ03G0843-0900 Rev.10.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

Contextual Info: Preliminary Datasheet TBB1005 R07DS0315EJ1000 Previous: REJ03G0843-0900 Rev.10.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

Contextual Info: Preliminary Datasheet TBB1004 R07DS0314EJ1200 Previous: REJ03G0842-1100 Rev.12.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

Contextual Info: Preliminary Datasheet TBB1005 R07DS0315EJ1000 Previous: REJ03G0843-0900 Rev.10.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

Contextual Info: Preliminary Datasheet TBB1004 R07DS0314EJ1200 Previous: REJ03G0842-1100 Rev.12.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

Contextual Info: Preliminary Datasheet TBB1002 R07DS0313EJ1000 Previous: REJ03G0841-0900 Rev.10.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

Contextual Info: Preliminary Datasheet TBB1002 R07DS0313EJ1000 Previous: REJ03G0841-0900 Rev.10.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.