120V TO 12V RECTIFIER Search Results

Contextual Info: Toroidal TOROIDAL POWER L.V. RECTIFIER USE TRANSFORMERS • Low profile • Space saving and lightweight due to high efficiency toroidal design. • Low EMF radiation. • Dual primary 117/234 VAC, 50/60 Hz. • Dual secondaries for series or parallel connections

transformers 240v to 12v

Abstract: VA15-15 182J240 182U110 UL506 182L22 182Q117 182U30 888a 182T2
Contextual Info: Toroidal TOROIDAL POWER L.V. RECTIFIER USE TRANSFORMERS • Low profile • Space saving and lightweight due to high efficiency toroidal design. • Low EMF radiation. • Dual primary 117/234 VAC, 50/60 Hz. • Dual secondaries for series or parallel connections

Contextual Info: PD-96931 RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 IRHNJ67134 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ67134 100K Rads (Si) RDS(on) 0.088Ω ID 19A IRHNJ63134 0.088Ω 19A 300K Rads (Si) SMD-0.5 International Rectifier’s R6TM technology provides

Contextual Info: PD-96930 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67134CM 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS67134CM 100K Rads (Si) 0.09Ω ID 19A IRHYS63134CM 300K Rads (Si) 19A 0.09Ω International Rectifier’s R6 TM technology provides

mev smd diode

Abstract: IRHNA67164 IRHNA63164 ir*7164
Contextual Info: PD-96959A RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-2 IRHNA67164 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHNA67164 100K Rads (Si) RDS(on) 0.018Ω ID 56A* IRHNA63164 0.018Ω 56A* 300K Rads (Si) SMD-2 TM International Rectifier’s R6 technology provides

mev smd diode

Contextual Info: PD-96959 RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-2 IRHNA67164 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHNA67164 100K Rads (Si) RDS(on) 0.018Ω ID 56A* IRHNA63164 0.018Ω 56A* 300K Rads (Si) SMD-2 International Rectifier’s R6 technology provides

IRHYB63134CM

Abstract: IRHYB67134CM
Contextual Info: PD-96997 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67134CM 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYB67134CM 100K Rads (Si) 0.09Ω ID 19A IRHYB63134CM 300K Rads (Si) 19A 0.09Ω International Rectifier’s R6 TM technology provides

IRHNJ67134

Abstract: IRHNJ63134
Contextual Info: PD-96931A RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 IRHNJ67134 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ67134 100K Rads (Si) RDS(on) 0.088Ω ID 19A IRHNJ63134 0.088Ω 19A 300K Rads (Si) SMD-0.5 International Rectifier’s R6TM technology provides

Contextual Info: PD-96959B 2N7581U2 IRHNA67164 150V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 TECHNOLOGY Product Summary Part Number IRHNA67164 Radiation Level 100K Rads (Si) RDS(on) 0.018Ω ID 56A* IRHNA63164 300K Rads (Si) 0.018Ω 56A* International Rectifier’s R6TM technology provides

2N7581

Abstract: 2N768 2N758 2N7581u2
Contextual Info: PD-96959B 2N7581U2 IRHNA67164 150V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 TECHNOLOGY Product Summary Part Number IRHNA67164 Radiation Level 100K Rads (Si) RDS(on) 0.018Ω ID 56A* IRHNA63164 300K Rads (Si) 0.018Ω 56A* International Rectifier’s R6TM technology provides

IRHMS63164

Abstract: IRHMS67164
Contextual Info: PD-96958 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS67164 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHMS67164 100K Rads (Si) 0.019Ω 45A* IRHMS63164 300K Rads (Si) 0.019Ω 45A* International Rectifier’s R6TM technology provides

IRHYS63134CM

Abstract: IRHYS67134CM
Contextual Info: PD-96930A RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67134CM 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS67134CM 100K Rads (Si) 0.09Ω ID 19A IRHYS63134CM 300K Rads (Si) 19A 0.09Ω International Rectifier’s R6 TM technology provides

2N7582

Abstract: 2N7582T1 IRHMS67164
Contextual Info: PD-96958A RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA 2N7582T1 IRHMS67164 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67164 100K Rads (Si) RDS(on) 0.019Ω ID 45A* IRHMS63164 0.019Ω 45A* 300K Rads (Si) International Rectifier’s R6TM technology provides

Contextual Info: PD-96997A RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67134CM 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHYB67134CM 100K Rads (Si) RDS(on) I D 0.090Ω 19A IRHYB63134CM 300K Rads (Si) 0.090Ω 19A International Rectifier’s R6 TM technology provides

Contextual Info: PD-96958A RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA 2N7582T1 IRHMS67164 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67164 100K Rads (Si) RDS(on) 0.019Ω ID 45A* IRHMS63164 0.019Ω 45A* 300K Rads (Si) International Rectifier’s R6TM technology provides

MEPCO electra

Abstract: 319DA541T250AMA1 P4855-1 3120EA651T200BHA1 surge lightning to smps MEPCO 12v dc 240v dc step up mepco capacitor triac noise suppressor MEPCO electra thermistor
Contextual Info: HARDENING POWER SUPPLIES TO LINE VOLTAGE TRANSIENTS Originally presented at the Power Electronics Design Conference, October, 1985, Anaheim, California Also published in Power Conversion & Intelligent Motion, June, 1986 Abstract The power line transient environment is described. Transient voltages on the DC output of off-line rectifier/filter designs are shown. Protection schemes

mepco capacitor

Abstract: 6 volts SMPS Power supply surge lightning to smps
Contextual Info: HARDENING POWER SUPPLIES TO LINE VOLTAGE TRANSIENTS Originally presented at the Power Electronics Design Conference, October, 1985, Anaheim, California Also published in Power Conversion & intelligent Motion, June, 1986 Abstract The pow er line transi&nt environment is described. Transient voltages on the D C output of off-line rectifier/fitter designs are shown. Protection schemes

Contextual Info: Isolation & Auto Transformers_ SPLIT BOBBIN ISOLATION TRANSFORMERS 3 VA to 1.25 KVA 5 0 /6 0 Hz 230V/230V or 115V/115V or 230V/115V or 115V/230V 1.5 KV RMS Hipot - UL Class B (130°C) (Mtg. Style: C) (STD. SIZE l-VIII) ISO LA TIO N T R A N S FO R M E R

IRF5Y6215CM

Contextual Info: PD - 94165 HEXFET POWER MOSFET THRU-HOLE TO-257AA IRF5Y6215CM 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5Y6215CM -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

IRF5NJ6215

Contextual Info: PD - 94284A HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ6215 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ6215 -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing

Contextual Info: PD - 94284A HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ6215 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ6215 -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing

IRF5NJ6215

Abstract: 75vds p mosfet
Contextual Info: PD - 94284 HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ6215 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ6215 -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing

Contextual Info: PD-94165A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRF5Y6215CM 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5Y6215CM -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

Contextual Info: PD-94165A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRF5Y6215CM 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5Y6215CM -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance