1209 DIODE Search Results

data 8873 64 pin colour tv ic

Abstract: EPCOS bb 2790 varistor 250v 592 PH epcos 565-2 BT 4840 amp 6-hole Ferroxcube Wide band HF Choke SRF 3897 NFM55PC155F1H4L B82789-C104 cx 2602 semiconductor
Contextual Info: 1209 Technical portal and online community for Design Engineers - www.element-14.com EMC, Filters & Suppression Page Cable Ferrites . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Ferrite Transformers . . . . . . . . . . . . . . . . . . . . . . .

DIODE S3V 40

Abstract: differential pair cascode differential pair cascode darlington lm1209 LM1208N LM1209N N28B blank schematic flow
Contextual Info: a t i o n a l S e m LM1208/LM 1209 N i c o n d u c t o r & LM1208/LM 1209 130 MHz/100 MHz RGB Video Amplifier System with Blanking General Description The L M 1 2 0 8 /L M 1 209 is a very high frequency video am plifi­ er system intended fo r use in high resolution RGB m onitor

P130T

Abstract: Z57F
Contextual Info: ¿¿PD75112, 75116 4-Bit Single-Chip Microcomputer Data Sheet Description Please refer to "Quality Grade on NEC Semicon­ ductor Devices" Document number IEI-1209 published by NEC Corporation to know the speci­ fication of quality grade on the devices and its

4464m

Contextual Info: 19-1209; Rev 0; 10/97 KIT ATION EVALU E L B AVAILA Low-Voltage IF Transceiver with Limiter and RSSI The MAX2511 is a complete, highly integrated IF transceiver for applications employing a dual-conversion architecture. Alternatively, the MAX2511 can be used

MAX2510

Abstract: MAX2511 MAX2511EEI
Contextual Info: 19-1209; Rev 0; 10/97 KIT ATION EVALU E L B AVAILA Low-Voltage IF Transceiver with Limiter and RSSI The MAX2511 is a complete, highly integrated IF transceiver for applications employing a dual-conversion architecture. Alternatively, the MAX2511 can be used

max2630

Abstract: MAX2510 MAX2511 MAX2511EEI 58-J105
Contextual Info: 19-1209; Rev 0; 10/97 KIT ATION EVALU E L B AVAILA Low-Voltage IF Transceiver with Limiter and RSSI The MAX2511 is a complete, highly integrated IF transceiver for applications employing a dual-conversion architecture. Alternatively, the MAX2511 can be used

GTO thyristor

Abstract: ABB GTO ABB thyristor 5 THYRISTOR GTO gto peak reverse voltage test abb GTO thyristor ABB
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 4000 25 1.20 0.65 2800 V A kA V Gate turn-off Thyristor 5SGF 40L4502 mΩ V Doc. No. 5SYA 1209-03 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode

Contextual Info: Key Parameters VDRM = 4500 ITGQM = 4000 ITSM = 25 VT0 = 1.20 rT = 0.65 VDClink = 2800 V A kA V Gate turn-off Thyristor 5SGF 40L4502 mΩ V Doc. No. 5SYA 1209-04 April 98 Features The 5SGF 40L4502 is a 91 mm buffered layer GTO with exceptionally low dynamic and static

0.1pf varactor

Contextual Info: 19-1209; Rev 0: 10/97 V M X X I V M Low -Voltage IF Transceiver w ith L im ite r an d R SSI _ Genera! Description The MAX2511 is a complete, highly integrated IF trans­ ceiver for applications employing a dual-conversion architecture. Alternatively, the MAX2511 can be used

4AM11

Abstract: SP-10 Hitachi DSA00316
Contextual Info: 4AM11 Silicon N-Channel/P-Channel Power MOS FET Array ADE-208-1209 Z 1st. Edition Mar. 2001 Application High speed power switching Features • Low on-resistance N-channel: RDS(on) ≤ 0.17 , VGS = 10 V, I D = 2.5 A P-channel: RDS(on) ≤ 0.2 , VGS = –10 V, I D = –2.5 A

Contextual Info: 19-1209: RevO; y M X X iy u Low -V oltage IF Transceiver w ith L im ite r an d RSSI _ G eneral D escription _Features The M AX2511 is a com plete, highly integrated IF trans­ c e ive r for a p p lic a tio n s e m p lo y in g a d u a l-co n ve rsio n

crt monitor circuit diagram

Abstract: UD 1208 CJ 53B 30 097 differential pair cascode differential pair cascode darlington lm r61 a4 LM1208 LM1208N LM1209 LM1209N
Contextual Info: t * a t i o n a l S e m i c o n d u c t o r L M 1 2 0 8 /L M 1209 130 M H z/1 0 0 MHz RGB V ideo Am plifier System with Blanking General Description The LM1208/LM1209 is a very high frequency video amplifi­ er system intended for use in high resolution RGB monitor

LT1560ED

Abstract: PQ2WZ51 LT024MD GP1F31T s202t02 GP1U801X LT022 GP2L20L GP1U78R PQ05DZ51
Contextual Info: SHARP Model No. List Model No. List • Infrared Emitting Diodes Model No. GL1F20 GL380 QL381 GL382 GL390 GL390V GL453 GL454 GL480 GL480Q GL4S3Q GL4800 GL460 GL461 GL4600 GL4610 GL4100 GL4200 GL4910 GL496 GL513F GL514 GL560 GL561 GL533 GL537 GL538 GL550 GL551

1SS134 ROHM

Abstract: ROHM 1SS292 1SS139
Contextual Info: $ < K /D io d es M 3 . -f y ^ > *7 $ - i $ — K /S w itc h in g Diodes • S & J f X 'f K /H ig h - S p e e d S w itching Diodes m Type B E S S IE Vr V i1 EE Cond. V f (V) Max. I f (mA) Package Page 1S2471 80 1.2 100 D O -35/S C -40 1187 1S2472 50 1.2 100

2SC2982

Abstract: TA8486F RN5006 RN6006 SSOP24
Contextual Info: TO SH IBA TA8486F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT MULTI-CHIP TA8486F DRIVER FOR LOW-SATURATION VOLTAGE MOTORS The TA8486F is a multi-chip 1C containing ten lowsaturation voltage discrete transistors. The TA8486F is perfect as a driver for low-saturation

schematic adsl modem board

Abstract: generator voltage pwm schematic buck converter various PWM techniques EL7566 47 uf capacitor schematic circuit adsl modem board sepic converter 550khz AN1209 EL7532 ISL6410
Contextual Info: Intersil Integrated FET DC/DC Converters Application Note February 23, 2006 AN1209.0 Author: Alan Rich Table of Contents Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

DA7202-A2

Abstract: DA7202 1209 DIODE MICRO USA Pressure Sensor harsh pressure die high temperature pressure low die bond sensor DA72 negative PRESSURE SENSOR
Contextual Info: PRESSURE SENSOR DIE 0-2 BAR FOR HARSH ENVIRONMENT MS7202-A2 • • • • • • 0 to 200 kPa range (2 bar or 29 PSI) Uncompensated absolute pressure sensor die Piezoresistive silicon micromachined sensor Hermetic sensor, temperature up to 150°C Pads on one side

1209 DIODE

Abstract: piezo pressure sensor negative PRESSURE SENSOR MICRO USA Pressure Sensor MS7207-A2 Intersema Sensoric SA pressure low die bond sensor harsh environment PRESSURE SENSOR
Contextual Info: PRESSURE SENSOR DIE 0-7 BAR FOR HARSH ENVIRONMENT MS7207-A2 • • • • • • 0 to 700 kPa range (7 bar or 102 PSI) Uncompensated absolute pressure sensor die Piezoresistive silicon micromachined sensor Hermetic sensor, temperature up to 150°C Pads on one side

MICRO USA Pressure Sensor

Abstract: pressure low die bond sensor 1209 DIODE pressure sensor 0 to 10 bar
Contextual Info: PRESSURE SENSOR DIE 0-4 BAR FOR HARSH ENVIRONMENT MS7204-A2 • • • • • • 0 to 400 kPa range (4 bar or 58 PSI) Uncompensated absolute pressure sensor die Piezoresistive silicon micromachined sensor Hermetic sensor, temperature up to 150°C Pads on one side

Contextual Info: TOSHIBA 2SK2782 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2782 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 4 V Gate Drive

k3314

Abstract: 2SK3314 SC-65
Contextual Info: 2SK3314 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O S V 2SK3314 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR, DC-DC CONVERTER APPLICATIONS M OTO R DRIVE APPLICATIONS Fast Reverse Recovery Time INDUSTRIAL APPLICATIONS

TC7SZU04AFE

Contextual Info: TO SH IBA TC7SZU04AFE TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SZU04AFE INVERTER FEATURES • High Output Drive ± 16 mA Typ. @VCc = 4.5 V • Low Quiescent Power Ice < 2 juA (Max.) @VCC = 5.5 V, Ta = 25°C Operation Voltage Range v CC(opr) = 1-8 -5 .5 V

TC7SZ04AFE

Contextual Info: TOSHIBA TC7SZ04AFE TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SZ04AFE INVERTER FEATURES ± 24 mA Typ. • High Output Drive • Super High Speed Operation tpD 2.4 ns (Typ.) @ V Cc = 5 V, 50 pF Operation Voltage Range v CC(opr) = 1-8-5.5 V

TC7SZ08AFE

Contextual Info: TO SH IBA TC7SZ08AFE TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SZ08AFE 2 INPUT AND GATE FEATURES • High Output Drive • Super High Speed Operation • • Operation Voltage Range : V x (o p r = 1.8—5.5 V Supply Voltage Data Retention : V qq = 1.5~5.5V