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    1208 GE Search Results

    1208 GE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    68001-208HLF
    Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded vertical header, Through Hole, Single Row, , 8 Positions, 2.54 mm (0.100in) Pitch. PDF
    77317-112-08LF
    Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded Right angle Header, Through Hole, Double Row, 8 Positions ,2.54mm (0.100in) Pitch, PDF
    54121-112081950LF
    Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded vertical stacked header, Through Hole, Single Row, 8 Positions, 2.54mm (0.100in) Pitch. PDF
    68031-208HLF
    Amphenol Communications Solutions BergStik® 2.54mm, Board to Board connector, Unshrouded Header, Through Hole, Single Row, 8 Positions, 2.54 mm Pitch, Vertical, 5.84 mm (0.23in) Mating, 4.65 mm (0.183in) Tail. PDF
    54122-106120800RLF
    Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded stacking vertical header, through hole, double Row, 12 position, 2.54mm (0.100in) pitch PDF
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    1208 GE Price and Stock

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    iWave Global IW-G26ISA-512-08G-EIW-XM-12-EM-LI9BXX-D

    RUGGED TELEMATICS DEVICE
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    DigiKey IW-G26ISA-512-08G-EIW-XM-12-EM-LI9BXX-D Bulk 2 1
    • 1 $766.60
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    Pentair Equipment Protection - Hoffman HALP121208GE

    IEC ALUM TERM BOX 122X122X80
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    DigiKey HALP121208GE Bulk 1
    • 1 $216.35
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    iWave Global iW-G26ISA-512-08G-EIW-XM-12-EM-LI9BXX-D

    Gateways Evaluation Kit with LTE Cat-4 (EMEA/APAC) External Antennas
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    Mouser Electronics () iW-G26ISA-512-08G-EIW-XM-12-EM-LI9BXX-D
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    iW-G26ISA-512-08G-EIW-XM-12-EM-LI9BXX-D
    • 1 $557.00
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    Texas Instruments TRF1208LGEVM

    Amplifier IC Development Tools TRF1208 evaluation m odule for 3-dB-band
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    Mouser Electronics () TRF1208LGEVM
    • 1 $630.02
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    TRF1208LGEVM
    • 1 $630.02
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    1208 GE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: This document was generated on 04/30/2012 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: 90147-1208 Active Overview: Description: C-Grid Products 2.54mm Pitch C-Grid® PC Board Connector, Single Row, Vertical, 8 Circuits Documents:


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    LR19980 E29179 90147Series SDA-90147 PDF

    azetalharz

    Abstract: ratio speed control valve
    Contextual Info: FIBER Getriebe für Synchronmotoren 494-1208 & 494-1214 Getriebe Merkmale • Verschiedene Getriebeleistungen bis zu 70 Ncm • Lange Lebensdauer – bis zu 10.000 Stunden bei Vollleistung • Mögliche Anwendungen: Steuerventilbetätigung, Timer, Schlauchpumpen, CCTV Hilfsantrieb


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    55Ncm azetalharz ratio speed control valve PDF

    Contextual Info: This document was generated on 04/30/2012 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Overview: Description: 90148-1208 Active C-Grid Products 2.54mm Pitch C-Grid® PC Board Connector, Single Row, Right Angle, 0.38µm Gold


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    LR19980 E29179 Re54mm 90148Series SDA-90148 PDF

    Mclennan

    Abstract: m5175 M517 synchronous MOTORS mclennan synchronous motor
    Contextual Info: FIBER Unidirektionale AC Synchronmotoren DE Merkmale • • • • • • • • • • Konstante Drehgeschwindigkeit 500 UPM Kompakte Abmessungen 494-1208, Drehrichtung rechts 2 Leitungen, kein Kondensator erforderlich Preiswert 494-1214, Drehrichtung links


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    Daten1258, 250mm Mclennan m5175 M517 synchronous MOTORS mclennan synchronous motor PDF

    NEC JAPAN

    Abstract: NESG3031M14 NESG3031M14-T3
    Contextual Info: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification


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    NESG3031M14 NESG3031M1conductor NEC JAPAN NESG3031M14 NESG3031M14-T3 PDF

    Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2021M16 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD M16, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications


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    NESG2021M16 NESG2021M16-A M8E0904E PDF

    Contextual Info: This document was generated on 05/09/2012 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Overview: Description: 90136-1208 Active C-Grid III 2.54mm Pitch C-Grid III™ Header, Single Row, Vertical, Shrouded, 8 Circuits, 0.38µm


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    E29179 90136Series SDA-90136 PDF

    LM1208

    Abstract: crt monitor block diagram differential pair cascode differential pair cascode darlington THR9 TRANSISTOR C 6090 LM1208N
    Contextual Info: January 1994 LM1208 130 MHz RGB Video Amplifier System with Blanking General Description The LM 1208 is a very high frequency video amplifier system intended for use in high resolution RGB monitor applica­ tions. In addition to the three matched video amplifiers, the


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    LM1208 LM1208 Cep-01451, 0Qfifiti24 crt monitor block diagram differential pair cascode differential pair cascode darlington THR9 TRANSISTOR C 6090 LM1208N PDF

    Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise,


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    NESG2101M16 NESG2101M16 PU10395EJ03V0DS PDF

    DCM37PD

    Contextual Info: Datasheet for part number DCM37PD Our Catalog Part Number: DCM-37P-D Our Global Manufacturing Part Number: 053514-1208 Brand: Cannon Product Category: D Sub Product Line: D Sub Series: D*M Product Datasheet General Wire Gauge Range AWG Mating Cycles Contact Arrangement


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    DCM37PD DCM-37P-D DCM37PD PDF

    Contextual Info: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM C RF TRANSISTOR NESG4030M14 NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification


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    NESG4030M14 NESG4030M14 NESG4030M14-A NESG4030M14-T3 NESG4030M14-T3-A PDF

    NEC JAPAN

    Abstract: NESG2021M16 NESG2021M16-T3
    Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2021M16 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD M16, 1208 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications


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    NESG2021M16 NEC JAPAN NESG2021M16 NESG2021M16-T3 PDF

    NESG2101M16

    Abstract: NESG2101M16-T3 NESG2101M16-T3-A
    Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification


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    NESG2101M16 M8E0904E NESG2101M16 NESG2101M16-T3 NESG2101M16-T3-A PDF

    Contextual Info: LESHAN RADIO COMPANY, LTD. Low frequency transistor The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. zApplications For switching, for muting. PNP zFeatures 1 A collector current is large.


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    500mA 250mA 200mA L2SA2030M3T5G PDF

    Contextual Info: SML-01 series Datasheet lFeatures lOutline • Reflector type 3.0x2.0mm, t=1.3mm • Reflector improved the concentration of viewing angle and luminous intensity to the front direction lSize Color Type 1006 (0402) 3020 (1208) 3.0×2.0mm (t=1.3mm) 1.0×0.6mm


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    SML-01 R1102A PDF

    transistor dc 558 npn

    Abstract: 2SC5843
    Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5843 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD M16, 1208 PACKAGE FEATURES • Ideal for low noise, high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz


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    2SC5843 2SC5843-T3 transistor dc 558 npn 2SC5843 PDF

    NESG2101M16

    Abstract: NESG2101M16-T3
    Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification


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    NESG2101M16 NESG2101M16 NESG2101M16-T3 PDF

    Contextual Info: T O SH IB A RN1207-RN1209 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN 1207, RN 1208, RN 1209 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • • • • With Built-in Bias Resistors Simplify Circuit Design


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    RN1207-RN1209 RN2207 RN2209 RN2207 RN2208 RN1207 RN1207-RN PDF

    Contextual Info: LESHAN RADIO COMPANY, LTD. Low frequency transistor The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. zApplications For switching, for muting. PNP zFeatures 1 A collector current is large.


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    500mA 250mA -200mA -10mA L2SA2030M3T5G OT-723 PDF

    Contextual Info: This document was generated on 06/22/2012 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Overview: Description: 73644-1208 Active HDM 2.00mm Pitch HDM® Board-to-Board Backplane Header, Vertical, SMC, Press-Fit, Guide Post Location B, Polarizing Key Position E, 144 Circuits


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    LR19980 E29179 SDA-73644-* PDF

    Contextual Info: This document was generated on 03/29/2012 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Overview: Description: 90130-1208 Active C-Grid III 2.54mm Pitch C-Grid III™ Header, Dual Row, Vertical, Shrouded, Fully Loaded, 8 Circuits, Black, 0.38µm Gold Au Selective Plating


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    PS-99020-0001 90130Series PS-99020-0001 SDA-90130 PDF

    Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification


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    NESG2101M16 NESG2101M16 M8E0904E PDF

    Contextual Info: 147 Central Avenue Hackensack, New Jersey 07601 Tel: 201-489-8989 • Fax: 201-489-6911 CHICAGO MINIATURE LAMP, INC. WHERE INNOVATION COMES TO LIGHT 7016X Series SMT LEDs 1208 Package Size DESCRIPTION AND FEATURES Surface Mount Technology •Tape and reel packaged for high-speed


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    7016X 7016X13 7016X1 7016X3 7016X5 7016X11 PDF

    NESG3033M14

    Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3033M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz


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    NESG3033M14 NESG3032M14. NESG3033M14 NESG3033M14-A NESG3033M14-T3 NESG3033M14-T3-A PU10640EJ01V0DS PDF