1200V FET Search Results

FGL35N120FTDTU

Abstract: FGL35N120FTD 16S-W c368w
Contextual Info: FGL35N120FTD tm 1200V, 35A Trench IGBT Features General Description • Field Stop Trench Technology Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche

inverter welding machine

Abstract: FAIRCHILD Igbts FGH25N120FTDS fgh25n120 IGBT Transistor 1200V, 25A
Contextual Info: FGH25N120FTDS tm 1200V, 25A Field Stop Trench IGBT Features General Description • High speed switching Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche

Contextual Info: FGH25N120FTDS tm 1200V, 25A Field Stop Trench IGBT Features General Description • High speed switching • Low saturation voltage: VCE sat = 1.60V @ IC = 25A • High input impedance • RoHS compliant Using advanced field stop trench technology, Fairchild’s 1200V

fga20s120m

Abstract: 600v 20a IGBT 1200v 20a IGBT DIODE GE 20a igbt 20A 1200v 12v igbt 20a
Contextual Info: FGA20S120M tm 1200V, 20A ShortedAnodeTM IGBT Features General Description • High speed switching Using advanced Field Stop Trench and ShortedAnode technology, Fairchild’s 1200V ShortedAnodeTM Trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche capability. This

Contextual Info: FGL35N120FTD tm 1200V, 35A Trench IGBT Features General Description • Field Stop Trench Technology • High Speed Switching Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche

SiC IGBT High Power Modules

Abstract: SiC JFET SiC-JFET infineon power cycling ups high power FET Transistor "silicon carbide" FET silicon carbide JFET high power FET Transistor for ups infineon igbt power solar inverter silicon carbide j-fet
Contextual Info: Product Brief main Features 1200V IGBT 4 n n n n THe neW 1200V IGBT 4 generation combined with the improved emitter Controlled diode from Infineon provides three optimized chip versions for low, medium and high power IGBT modules. These chips are designed to the needs

mosfet 1200V

Abstract: cmf20120 SiC MOSFET Cree SiC MOSFET DMOSFET CMF20120D IXDI414 DMOS SiC JEDEC24 RB160M-60
Contextual Info: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FET MOSFET Rev. CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FET™ MOSFET N-Channel Enhancement Mode VDS = 1200 V

H-Bridge

Abstract: 600V1200V p623f
Contextual Info: Standard H-Bridge Module fastPACK 0 H 2nd gen Features - H-bridge 600V.1200V / 20A.100A Standard- and high speed IGBT´s or MOS-FET Ultra low inductive design Vincotech - Power Flow Through for simple PCB routing Vincotech - Clip In, the reliable interconnection between PCB, module and

p623f

Abstract: 600V1200V p623
Contextual Info: Standard H-Bridge Module fastPACK 0 H 2nd gen Features - H-bridge 600V.1200V / 20A.100A Standard- and high speed IGBT´s or MOS-FET Ultra low inductive design Vincotech - Power Flow Through for simple PCB routing Vincotech - Clip In, the reliable interconnection between PCB, module and

CMF20120D

Abstract: JEDEC24 mosfet 1200V RB160M 6N137 IXDI414 RB160M-60 DMOS SiC electronic transformer halogen 12v MOSFET 800V 10A
Contextual Info: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FeTTM MOSFET Rev. A CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V RDS on = 80 mΩ N-Channel Enhancement Mode

MYXJ11200-34CAB

Abstract: silicon carbide
Contextual Info: Silicon Carbide J-FET Normally On 1200 Volt 34 Amp Hermetic MYXJ11200-34CAB Product Overview Features y r a in Benefits • High voltage 1200V • Low on resistance RDS On • High current 34A • Voltage controlled • High temperature 175°C • Low gate charge

CAS100H12

Abstract: CREE 1200V Z-Rec CAS100H12AM1 Cree SiC MOSFET silicon carbide MOSFET "CURRENT source"
Contextual Info: CAS100H12AM1 VDS 1200 V 1200V, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode ID TC= 100˚C 100 A RDS(on) Features • • • • • • Package Ultra Low Loss High Ruggedness High-Frequency Operation Zero Reverse Recovery Current from Diode

Contextual Info: FGA30N120FTD 1200 V, 30 A Field Stop Trench IGBT Features • Field Stop Trench Technology General Description • High Speed Switching Using advanced field stop trench technology, Fairchild ’s 1200V trench IGBTs offer superior conduction and switching

FGA15N20

Contextual Info: FGA15N120FTD 1200 V, 15 A Field Stop Trench IGBT Features • Field Stop Trench Technology General Description • High Speed Switching Using advanced field stop trench technology, Fairchild ’s 1200V trench IGBTs offer superior conduction and switching

wechselrichter

Abstract: TRANSISTOR TC 100 RG 150 diode diode p 600 k
Contextual Info: target datasheet version 09/02 V23990-P439-F flow PACK 1, 1200V Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung

marking codes fairchild

Abstract: 1200v 3A
Contextual Info: S3N 3A, 1200V Surface Mount Rectifier Features • Low Profile Package • Glass Passivated Junction. • High Breakdown Voltage Rating • UL Flammability Classification 94V-0 ELECTRICAL SYMBOL SMC/DO-214AB DEVICE MARKING CODE : S3N COLOR BAND DENOTES CATHODE

fga30n120

Abstract: FGH30N120FT
Contextual Info: FGA30N120FTD 1200 V, 30 A Field Stop Trench IGBT Features • Field Stop Trench Technology General Description • High Speed Switching Using advanced field stop trench IGBT technology, Fairchild ’s 1200V trench IGBTs offer the optimum performance for hard

FGA20N120

Abstract: FGA20N120FTD
Contextual Info: FGA20N120FTD 1200 V, 20 A Field Stop Trench IGBT Features General Description • Field Stop Trench Technology Using advanced field stop trench technology, Fairchild ’s 1200V trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can

EL2033CN

Abstract: EL2003C EL2003CM EL2003CN EL2033C E2130 RB350
Contextual Info: 100MHz Video Line Driver Features General Description • Differential gain 0.1% • Differential phase 0.1° • 100mA continuous output current guaranteed • Short circuit protected • Wide bandwidth - 100MHz • High slew rate - 1200V/µs • High input impedance - 2MΩ

fgh25n120

Abstract: FGH25N120FTDS fgh25n120ftd
Contextual Info: FGH25N120FTDS 1200 V, 25 A Field Stop Trench IGBT Features General Description • High Speed Switching Using advanced field stop trench technology, Fairchild ’s 1200V trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and

FGA20N120

Contextual Info: FGA20N120FTD 1200 V, 20 A Field Stop Trench IGBT Features General Description • Field Stop Trench Technology Using advanced field stop trench technology, Fairchild ’s 1200V trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can

igbt 40a 600v

Contextual Info: FGA20N120FTD 1200 V, 20 A Field Stop Trench IGBT Features General Description • Field Stop Trench Technology Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate

EL2003C

Abstract: EL2003CM EL2003CN EL2033C EL2033CN E2130
Contextual Info: 100MHz Video Line Driver Features General Description • Differential gain 0.1% • Differential phase 0.1° • 100mA continuous output current guaranteed • Short circuit protected • Wide bandwidth - 100MHz • High slew rate - 1200V/µs • High input impedance - 2MΩ

Quasi-resonant Converter for induction cooker

Abstract: IGBT 60A spice model 1000V igbt dc to dc buck converter CAR IGNITION WITH IGBTS 10 kw schematic induction heating Quasi-resonant Converter induction cooker applications FQPF18N50 1 kw schematic induction heating 600V igbt dc to dc buck converter pwm igbt based ac-dc converter
Contextual Info: The Power Franchise Summer - 2002 FEATURED IN THIS ISSUE 1200V Stealth fast/soft recovery avalanche energy rated diodes . . . Page 4 Trench MOSFETs for 42V automotive applications . . . Page 5 Bottomless SO-8 Package PowerTrench family . . . Page 6 .And More! . . . Page 7 and 8