1200V 10A Search Results

Contextual Info: XTRM Series XTR1K1210 HIGH-TEMPERATURE 10A, 1200V SIC SCHOTTKY DIODE FEATURES DESCRIPTION ▲ Reverse voltage up to 1200V. ▲ Operational beyond the -60°C to +230°C temperature range. ▲ Positive temperature coefficient for safe operation and ease paralleling.

Contextual Info: 1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode D3PAK APT10SC120B 1200V 10A APT10SC120S 1200V 10A 1 2 2 1 SILICON CARBIDE SCHOTTKY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • PFC And Forward Topologies • Schottky Barrier

APT2X10SC120J

Contextual Info: 2 3 2 2 3 3 1 1 4 1 4 4 Anti-Parallel Parallel APT2X10SC120J APT2X11SC120J 27 2 T- SO APT2X11SC120J APT2X10SC120J 1200V 1200V 10A 10A SILICON CARBIDE SCHOTTKY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • PFC And Forward Topologies

Q67050-A4110

Abstract: SIDC08D120H6
Contextual Info: Preliminary SIDC08D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC08D120H6 1200V IF 10A A This chip is used for:

Q67050-A4110

Abstract: SIDC08D120H6
Contextual Info: Preliminary SIDC08D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC08D120H6 1200V IF 10A A This chip is used for:

Contextual Info: Preliminary SIDC08D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC08D120H6 1200V IF 10A A This chip is used for:

Q67050-A4110

Abstract: SIDC08D120H6
Contextual Info: Preliminary SIDC08D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC08D120H6 1200V IF 10A A This chip is used for:

Contextual Info: Preliminary Technical Information GenX3TM 1200V IGBT VCES = IC25 = VCE sat ≤ tfi(typ) = IXGA24N120C3 IXGH24N120C3 IXGP24N120C3 High speed PT IGBTs for 10-50kHz Switching 1200V 48A 4.2V 110ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES VCGR

600v 30a IGBT

Abstract: FGH30N120FTD FGH30N120FTDTU IGBT 1200V 60A IGBT 200A 1200V application induction heating IGBT 60A 1200V HIGH VOLTAGE DIODE for microwave ovens igbt 600V 30A datasheet I36 MARKING igbt for HIGH POWER induction heating
Contextual Info: FGH30N120FTD tm 1200V, 30A Trench IGBT Features General Description • Field stop trench technology Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche

FGA30N120

Abstract: fgh30n120 FGA30N120FTD FGA30N120FTDTU FGH30N120FTD HIGH VOLTAGE DIODE for microwave ovens IGBT 1200V 60A 600v 30a IGBT FGH30N120FT igbt 600V 30A
Contextual Info: FGA30N120FTD tm 1200V, 30A Trench IGBT Features General Description • Field stop trench technology Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche

IXGH24N120C3

Abstract: ixga24N120 IC100 24N120C3 IXGP24N120C3 24N120
Contextual Info: Preliminary Technical Information VCES = IC25 = VCE sat ≤ tfi(typ) = IXGA24N120C3 IXGH24N120C3 IXGP24N120C3 GenX3TM 1200V IGBT High speed PT IGBTs for 10-50kHz Switching 1200V 48A 4.2V 110ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES VCGR

inverter welding machine

Abstract: FAIRCHILD Igbts FGH25N120FTDS fgh25n120 IGBT Transistor 1200V, 25A
Contextual Info: FGH25N120FTDS tm 1200V, 25A Field Stop Trench IGBT Features General Description • High speed switching Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche

Contextual Info: FGA30N120FTD tm 1200V, 30A Trench IGBT Features General Description • Field stop trench technology • High speed switching • Low saturation voltage: VCE sat = 1.6V @ IC = 30A • High input impedance Using advanced field stop trench technology, Fairchild’s 1200V

Contextual Info: FGH30N120FTD tm 1200V, 30A Trench IGBT Features General Description • Field stop trench technology • High speed switching • Low saturation voltage: VCE sat = 1.6V @ IC = 30A • High input impedance Using advanced field stop trench technology, Fairchild’s 1200V

GB05XP120K

Abstract: ntc 0833 igbt 50v 3a w306
Contextual Info: Bulletin I27168 Rev.E 10/03 GB05XP120K Three Phase Inverter Module in MTP Package 1200V NPT IGBT & Hexfredtm Diodes Features • Gen. 5 NPT 1200V IGBT Technology • HEXFRED TM Diode with UltraSoft Reverse Recovery • Very Low Conduction and Switching Losses

Contextual Info: FGH25N120FTDS tm 1200V, 25A Field Stop Trench IGBT Features General Description • High speed switching • Low saturation voltage: VCE sat = 1.60V @ IC = 25A • High input impedance • RoHS compliant Using advanced field stop trench technology, Fairchild’s 1200V

SIGC16T120CL

Contextual Info: Preliminary SIGC16T120CL IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120CL 1200V This chip is used for: • chip only

Contextual Info: Bulletin I27169 Rev.D 10/03 GB15XP120K Three Phase Inverter Module in MTP Package 1200V NPT IGBT & Hexfredtm Diodes Features • Gen. 5 NPT 1200V IGBT Technology • HEXFRED TM Diode with UltraSoft Reverse Recovery • Very Low Conduction and Switching Losses

Contextual Info: Advance Technical Information 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) IXYJ20N120C3D1 (Electrically Isolated Tab) = = ≤ = 1200V 7A 4.0V 108ns High-Speed IGBT for 20-50 kHz Switching ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings

SCR 200A 500V

Abstract: 50A 1200V SCR CYNA25
Contextual Info: POWER COMPONENTS • Motor Control > Suitable for General Purpose AC Switching > IGT 25 mA Max. • Overvoltage Crowbar Protection > VDRM/VRMM 400, 600, 800, 1200V Applications • Voltage Regulation CYNA/CYNB16 • Welding Equipment 16Amp - 400/600/800/1200V - SCR

SIGC16T120CL

Contextual Info: SIGC16T120CL IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120CL 1200V This chip is used for: • chip only G Applications:

Contextual Info: Advance Technical Information 1200V XPTTM GenX3TM IGBTs VCES IC110 VCE sat tfi(typ) IXYP20N120C3 IXYH20N120C3 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 20A 4.0V 108ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

Contextual Info: FGA25N120FTD tm 1200V, 25A Trench IGBT Features • Field stop trench technology • High speed switching • Low saturation voltage: VCE sat =1.6V @ IC = 25A • High input impedance • RoHS complaint General Description Using advanced field stop trench technology, Fairchild’s 1200V

fga20s120m

Abstract: 600v 20a IGBT 1200v 20a IGBT DIODE GE 20a igbt 20A 1200v 12v igbt 20a
Contextual Info: FGA20S120M tm 1200V, 20A ShortedAnodeTM IGBT Features General Description • High speed switching Using advanced Field Stop Trench and ShortedAnode technology, Fairchild’s 1200V ShortedAnodeTM Trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche capability. This