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ABB Low Voltage Products and Systems 5SNA 1200G450350 Module: IGBT; transistor/transistor,common gate,common emitter
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	5SNA 1200G450350				1	1 $2793.97 10 $2351.59 100 $2351.59 1000 $2351.59 10000 $2351.59	Get Quote
Hitachi Energy 5SNA1200G450350 POWER IGBT TRANSISTOR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Richardson RFPD	5SNA1200G450350				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

1200G450350 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
1200G450350 Abstract: 5SNA1200G450350 Contextual Info: VCE IC = = 4500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G450350 Doc. No. 5SYA 1415-02 04-2012 Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC Industry standard package High power density AlSiC base-plate for high power cycling capability	Original	1200G450350 CH-5600 1200G450350 5SNA1200G450350	PDF
Contextual Info: VCE IC = = 4500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G450350 Doc. No. 5SYA 1415-03 01-2014 • Ultra low-loss, rugged SPT+ chip-set  Smooth switching SPT+ chip-set for good EMC  Industry standard package  High power density  AlSiC base-plate for high power	Original	1200G450350 CH-5600	PDF
Contextual Info: VCE IC = = 4500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G450350 Doc. No. 5SYA 1415-03 01-2014 •     Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC Industry standard package High power density AlSiC base-plate for high power cycling	Original	1200G450350 UL1557, E196689 CH-5600	PDF
S 437 Diode Contextual Info: Data Sheet, Doc. No. 5SYA 1424-01 08-2012 5SLD 1200J450350 ABB HiPakTM DIODE Module VRRM = 4500 V IF = 2 x 1200 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance	Original	1200J450350 CH-5600 1200J450350 S 437 Diode	PDF
5SLD 1200J450350 Contextual Info: Data Sheet, Doc. No. 5SYA 1424-01 08-2012 5SLD 1200J450350 HiPak DIODE Module VRRM = 4500 V IF = 2 x 1200 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance	Original	1200J450350 CH-5600 5SLD 1200J450350	PDF
iec 61287 Abstract: 1200J450350 5SLD1200J450350 Contextual Info: Data Sheet, Doc. No. 5SYA 1424-01 08-2012 5SLD 1200J450350 HiPak DIODE Module VRRM = 4500 V IF = 2 x 1200 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance	Original	1200J450350 CH-5600 1200J450350 iec 61287 5SLD1200J450350	PDF
Contextual Info: Data Sheet, Doc. No. 5SYA 1424-01 08-2012 5SLD 1200J450350 HiPak DIODE Module VRRM = 4500 V IF = 2 x 1200 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance	Original	1200J450350 UL1557, E196689 CH-5600	PDF