1200A Search Results

Thyristor ys

Abstract: thyristor 15V 1000A QM1200
Contextual Info: SG1200EX24 TOSHIBA GATE TURN-OFF THYRISTOR SG1200EX24 TENTATIVE DATA SG1200EX24 U nit in mm INVERTER APPLICATION • • • • • Repetitive Peak Off-State Voltage : VDRM = 2500V R.M.S On-State Current : lT(RMS) = 500A Peak Turn-Off Current : It GQM = 1200A

SG3000GXH29

Abstract: SG3000GXH 13-108D1A
Contextual Info: TOSHIBA GATE TURN-OFF THYRISTOR SEMICONDUCTOR TOSHIBA TECHNICAL SG3000GXH29 DATA SG3000GXH29 INVERTER APPLICATION U nit in mm 2 - 0 3.5 ± 0.2 Repetitive Peak Off-State Voltage : V d r m = 4500V R.M.S On-State C urrent : It (RMS)= 1200A Peak Turn-Off C urrent

SG3000GXH29

Contextual Info: TOSHIBA SG3000GXH23G TOSHIBA GATE TURN-OFF THYRISTOR TENTATIVE SG3000GXH23G Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage V d R M = 4500V R.M.S On-State Current iT RMS = 1200A IT G Q M = 3000A Peak Turn-Off Current Critical Rate of Rise of On-State Current : d i/d t = 400A/ /us

Contextual Info: 开 环 型＞＞b 系 列＞＞霍尔电流传感器 ＞＞霍尔电流传感器 HEC-B5 系列 电器特性： 规格型号 HEC600-B5 HEC800-B5 HEC1000-B5 HEC1200-B5 HEC1500-B5 HEC2000-B5 HEC2500-B5 额定电流 600A 800A 1000A 1200A 1500A 2000A 2500A 线性范围

Contextual Info: 开 环 型＞＞b 系 列＞＞霍尔电流传感器 ＞＞霍尔电流传感器 HEC-B6 系列 电器特性： 规格型号 HEC800-B6 HEC1000-B6 HEC1200-B6 HEC1500-B6 HEC1800-B6 HEC2000-B6 HEC2500-B6 额定电流 800A 1000A 1200A 1500A 1800A 2000A 2500A 线性范围

fbt symbol 6000

Abstract: monitor FBT SM-19B SM19A
Contextual Info: MATERIALS CHARACTERISTICS MATERIALS Mn-Zn 23t t*îac Bms H=1200A/m mT Ml «g 8M-19A WT90 500 ±20% 380±20% 380±20% 3200 ±20% 1900 ±20% SM-19B 2200 ± 20 % 23 t; 220 230 260 480 500 500 100 t; 150 155 170 340 390 400 Brms mT 23 t; 150 145 210 180 180

Contextual Info: TOSHIBA GATE TURN-OFF THYRISTOR SEMICONDUCTOR T O SH IB A TECHNICAL SG3000JX24 DATA SG3000JX24 Unit in mm INVERTER APPLICATION £ -0 3 .5 x 0 .2 Repetitive Peak Off-State Voltage : V d r m = 6000V R.M.S On-State Current : It (RMS)= 1200A Peak Turn-Off Current

Contextual Info: SG2500GXH24 TOSHIBA GATE TURN-OFF THYRISTOR SG2500GXH24 SG2500GXH24 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage : Vj)ujjj=4500V R.M.S On-State Current : It (RMS) = 1200A Peak Turn-Off Current : I t G Q M = 2500A Critical Rate of Rise of On-State Current : d i/d t = 400A/ //s

DAQCard-1200

Abstract: PCI-1200 82C53 82C55A CB-50 CB-50LP 25PIN D-SUB CONNECTORS
Contextual Info: PCI-1200, DAQCard-1200, Lab-PC-1200, Lab-PC-1200AI, DAQPad-1200 Low-Cost Multifunction I/O – 100 kS/s, 12-Bit, 8 Analog Inputs PCI-1200, DAQCard-1200, Lab-PC-1200, Lab-PC-1200AI, DAQPad-1200 Analog input 8 single-ended, 4 differential channels 12-bit resolution

CM1200HCB-34N

Abstract: TRANSISTOR JC 515 transistor 2955
Contextual Info: MITSUBISHI HVIGBT MODULES CM1200HCB-34N HIGH POWER SWITCHING USE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM1200HCB-34N ● IC . 1200A ● VCES . 1700V

SB20-05F

Abstract: en2992
Contextual Info: Ordering number:EN2992A SB20-05F Schottky Barrier Diode 50V, 2A Rectifier Applications Package Dimensions • High frequency rectification switching regulators, converters, choppers . unit:mm 1200A [SB20-05F] Features · Low forward voltage (VF max=0.55V).

erskine

Abstract: erskine rectifier erskine dc 48v erskine rectifier dc 48v 42U Rack isolators 415v 5448v erskine dc erskine rectifier dc 24v up/erskine rectifier dc 24v
Contextual Info: Product Features D e s c ri p t i o n • The Erskine SMS1200 utilises high frequency switchmode technology to deliver a compact, efficient and reliable source of DC power. The system provides 1200A output at a nominal -48v DC in a single cabinet. The system comes complete with two

UL 248-15

Abstract: LR29862 E81895
Contextual Info: JLLN/JLLS POWR-T Class T Fuses 300/600 VAC • Fast-Acting ■ 1 – 1200 Amperes SPECIFICATIONS Voltage Ratings: AC: 300 Volts JLLN ; 600 Volts (JLLS) DC: 125 Volts (JLLN 110 – 1200A); 300 Volts (JLLS) Interrupting Ratings: AC: 200,000 amperes rms symmetrical

Contextual Info: Si GEC P L E S S E Y o c t o b e r i 995 SE M IC OND UC TOR S DS4271-2.2 T F 2 1 9 .B FAST SWITCHING THYRISTOR APPLICATIONS KEY PARAMETERS v DRM 2000V 190A ^T RMS 1200A ^TSM dV/dt 200V/(is dl/dt 500A/|is 40jis • High Power Inverters And Choppers. ■ UPS.

Contextual Info: TOSHIBA SILICON DIFFUSED TYPE 1200GXHH22 High Speed Rectifier Applications • Repetitive Peak Reverse Voltage: VRRM=4500V • Average Forward Current: lF AV =1200A • Double Side Cooling Maximum Ratings CHARACTERISTIC SYMBOL RATINGS UNIT Repetitive Peak Reverse Voltage

Contextual Info: S Series F e at u r e s • 100-1200A ratings • 60mv and 75mv versions • 0.5% accuracy class • Manganin 6J13 plate resistive element construction • T, L, and DIN type terminals • H59-1 (UNS 37700) Brass Terminal Construction High Current Shunts

8k83

Abstract: diode 6.L
Contextual Info: F 1200A . F 1200G .3 Axial leaded diode High efficiency fast silicion rectifier diode F 1200A . F 1200G Forward Current: 12 A Reverse Voltage: 50 to 400 V Preliminary Data Features                 <  =  4

Contextual Info: TOSHIBA TENTATIVE 1200GXHH24 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 1 2 0 0 G X H H24 HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage : Vrrm = 4500V Average Forward Current : Ijr AV = 1200A Double Side Cooling MAXIMUM RATINGS

FWP-250A

Abstract: FWP-350A FWP-800A A02008 FWP-150A FWP70B FWP-10B FWP-15B FWP-20B FWP-30B
Contextual Info: Bussmann FWP 700V Type 5-1200A R ® Electrical Characteristics Ordering Information I2t A2 Sec Rated Current Clearing Watts Part Carton RMS-Amps Pre-arc at 700V Loss Number Qty. 5 1.6 10 1.5 FWP-5B

CM1200DC-34N

Contextual Info: MITSUBISHI HVIGBT MODULES CM1200DC-34N 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200DC-34N ● IC . 1200A ● VCES . 1700V

Contextual Info: UMS-1200-A16-G UMS-1200A16-GOCTAVE BAND VOLTAGE CONTROLLED OSCILLATOR OCTAVE BAND VOLTAGE CONTROLLED OSCILLATOR Package: A16, 12.7mm x 12.7mm x 3.43mm VCC Features  Octave Band Tuning  Frequency: 600MHz to 1200MHz  Resonator: Microstrip  PCB: Rogers

RECTIFIER DIODE D135

Contextual Info: Bulletin 12085/A htemational S Rectifier sd 8ooc.l s e rie s STANDARD RECOVERY DIODES Hockey Puk Version Features 1200A • W id e current range ■ High voltag e ratings up to 4 5 0 0 V ■ High surge current capab ilities ■ Diffused junction ■ H ockey Puk version

DFM600XXM45-F000

Abstract: DS5915-1
Contextual Info: DFM600XXM45-F000 Fast Recovery Diode Module DS5915-1.0 June 2007 LN25309 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 1200A Rating

DFM600XXM65-K000

Abstract: DFM600XXXM65-K000
Contextual Info: DFM600XXXM65-K000 Fast Recovery Diode Module DS5807-1.1 July 2007 LN25500 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated MMC Base plate With AIN Substrates • Dual Diodes Can Be Paralleled for 1200A Rating