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120LA
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Semicon Components
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Silicon Avalanche Rectifiers 1 to 350 Amp Selection Guide |
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88.93KB |
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120LQ045
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International Rectifier
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Schottky Rectifier |
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48.53KB |
4 |
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120LQ100
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International Rectifier
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Schottky Rectifier |
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48.48KB |
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MBR120LSF
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SUNMATE electronic Co., LTD
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Surface mount Schottky barrier diode MBR120LSF with 20 V peak repetitive reverse voltage, 1.0 A average rectified forward current, low forward voltage, guardring for stress protection, and operating junction temperature up to 125 °C. |
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NCE25TD120LT
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NCEPOWER
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1200V, 25A Trench FSII Fast IGBT with low VCE(sat), positive temperature coefficient, high ruggedness, and tight parameter distribution, suitable for inductive cooking and soft switching applications. |
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NCE40TD120LT
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NCEPOWER
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1200 V, 40 A Trench FS II Fast IGBT in TO-247 package with low VCE(sat), high-speed switching, positive temperature coefficient, and tight parameter distribution for inductive cooking and soft switching applications. |
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NCE40TD120LP
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NCEPOWER
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1200 V, 40 A Trench FSII IGBT in TO-3PN package with low VCE(sat), high-speed switching, positive temperature coefficient, and tight parameter distribution for inductive cooking and soft switching applications. |
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NCE25TD120LP
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NCEPOWER
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1200V, 25A Trench FSII Fast IGBT in TO-3PN package featuring low VCE(sat), positive temperature coefficient, high ruggedness, and optimized for soft switching and inductive cooking applications. |
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NCE15TD120LP
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NCEPOWER
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1200V, 15A Trench FSII Fast IGBT in TO-3PN package with low VCE(sat), positive temperature coefficient, and high ruggedness for soft switching and inductive cooking applications. |
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MM1Z 120L
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Shenzhen Heketai Electronics Co Ltd
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Surface-mount zener diode in SOD-123FL package with power dissipation up to 500 mW, available in nominal voltages from 2.0V to 120V, tolerance approximately ±5%, and operating junction temperature up to 150°C.Surface-mount Zener diode in SOD-123FL package with 500 mW power dissipation, available in voltage ranges from 2.0 to 120 V with approximately ±5% tolerance and operating junction temperature up to 150°C.Surface-mount Zener diode in SOD-123FL package with 500 mW power dissipation, available in voltages from 2.0 to 120 V, approximately ±5% tolerance, and operating junction temperature up to 150°C.Surface-mount Zener diode in SOD-123FL package with 500 mW power dissipation, available in E24 voltage range from 2.0 to 120 V, approximately ±5% tolerance, and junction temperature up to 150°C. |
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ST20120L
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JCET Group
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20A 120V Schottky rectifier diode in TO-277 package with low forward voltage, high surge current capability, and typical thermal resistance from junction to ambient of 8.3°C/W under single half sine-wave conditions. |
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MBR120LSF
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Shikues Semiconductor
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SS120L
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Shenzhen Heketai Electronics Co Ltd
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Schottky barrier diode in SOD-123FL surface mount package with repetitive peak reverse voltage from 20V to 200V, 1.0A average forward current, low forward voltage drop, and guard ring for overvoltage protection. |
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NCE15TD120LT
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NCEPOWER
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1200V, 15A Trench FSII Fast IGBT in TO-247 package featuring low VCE(sat), positive temperature coefficient, high ruggedness, and tight parameter distribution for inductive cooking and soft switching applications. |
Original |
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MBR120LSF
