120 M13 Search Results
120 M13 Price and Stock
Murata Manufacturing Co Ltd XRCGB27M120F3M13R0Crystals 2.0x1.6x0.65mm 27.12MHz Crystal +/-30ppm Initial tolerance |
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XRCGB27M120F3M13R0 | 21,736 |
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Kyocera AVX Components VCAS120660M131DPVaristors 50VAC 60VDC 1J 250pF 82 V 135V |
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VCAS120660M131DP | 12,098 |
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Kyocera AVX Components VC120665M131DPVaristors 50VAC 65VDC 1J 250pF 82 V 135V |
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VC120665M131DP | 1,196 |
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Molex 173107-0075D-Sub Mixed Contact Connectors 13 POS PCB PLUG 13W3 10 PIN 3 HOLE |
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173107-0075 | 232 |
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YAGEO Corporation RC1206FR-071M13LThick Film Resistors - SMD General Purpose Chip Resistor 1206, 1.13MOhms, 1%, 1/4W |
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RC1206FR-071M13L | 100 |
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120 M13 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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QFP120-P-2020-1
Abstract: FPT-120P-M13
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Original |
FPT-120P-M13 QFP120-P-2020-1 120-pin FPT-120P-M13) QFP120-P-2020-1 FPT-120P-M13 | |
304331
Abstract: AM 8815
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Original |
Way-90° ZMSCQ-2-120+ ZMSCQ-2-120 ZMSCQ-2-120( M136532 ZMSCQ-2-120 304331 AM 8815 | |
120 M13
Abstract: FPT-120P-M13 QFP120 QFP120-P-2020-1
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Original |
FPT-120P-M13 QFP120-P-2020-1 120-pin FPT-120P-M13) F120013S-2C-3 120 M13 FPT-120P-M13 QFP120 QFP120-P-2020-1 | |
QFP-120P
Abstract: FPT-120P-M13 QFP120-P-2020-1
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Original |
FPT-120P-M13 QFP120-P-2020-1 120-pin FPT-120P-M13) F120013S-2C-3 QFP-120P FPT-120P-M13 QFP120-P-2020-1 | |
Contextual Info: High Directivity Monolithic Amplifier 0.5-2.5 GHz Product Features • 2.8V & 5V operation • Micro-miniature size .120”X.120” • Internal DC blocking at RF input and output • High directivity, 20 dB typ. • Low noise figure • Output power, up to +19 dBm typ. |
Original |
DQ849 | |
Contextual Info: High Directivity Monolithic Amplifier 1.5-5.9 GHz Product Features • 2.8V & 5V operation • Micro-miniature size .120”X.120” • Internal DC blocking at RF input and output • High directivity, 20-24 dB typ. • Wide bandwidth, 1.5 to 5.9 GHz • Low noise figure |
Original |
DQ849 M134969 | |
Contextual Info: High Directivity Monolithic Amplifier 0.5-2.5 GHz Product Features • 2.8V & 5V operation • Micro-miniature size .120”X.120” • Internal DC blocking at RF input and output • High directivity, 17 dB typ. • Low noise figure • Output power, up to +11.4 dBm typ. |
Original |
DQ849 | |
Contextual Info: High Directivity Monolithic Amplifier 0.5-2.5 GHz Product Features • 2.8V & 5V operation • Micro-miniature size .120”X.120” • Internal DC blocking at RF input and output • High directivity, 20 dB typ. • Low noise figure • Output power, up to +17.9 dBm typ. |
Original |
DQ849 | |
m1349
Abstract: of GaAs MESFET amplifier
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Original |
DQ849 2002/95/EC) m1349 of GaAs MESFET amplifier | |
Contextual Info: High Directivity Monolithic Amplifier 0.5-2.5 GHz Product Features • 2.8V & 5V operation • Micro-miniature size .120”X.120” • Internal DC blocking at RF input and output • High directivity, 17 dB typ. • Low noise figure • Output power, up to +12.2 dBm typ. |
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DQ849 2002/95/EC) | |
Contextual Info: High Directivity Monolithic Amplifier 0.5-2.5 GHz Product Features • 2.8V & 5V operation • Micro-miniature size .120”X.120” • Internal DC blocking at RF input and output • High directivity, 17 dB typ. • Low noise figure • Output power, up to +11.4 dBm typ. |
Original |
DQ849 2002/95/EC) | |
Contextual Info: High Directivity Monolithic Amplifier 1.5-5.9 GHz Product Features • 2.8V & 5V operation • Micro-miniature size .120”X.120” • Internal DC blocking at RF input and output • High directivity, 20-24 dB typ. • Wide bandwidth, 1.5 to 5.9 GHz • Low noise figure |
Original |
DQ849 | |
Contextual Info: High Directivity Monolithic Amplifier 0.5-2.5 GHz Product Features • 2.8V & 5V operation • Micro-miniature size .120”X.120” • Internal DC blocking at RF input and output • High directivity, 17 dB typ. • Low noise figure • Output power, up to +12.2 dBm typ. |
Original |
DQ849 | |
Contextual Info: High Directivity Monolithic Amplifier 0.5-2.5 GHz Product Features • 2.8V & 5V operation • Micro-miniature size .120”X.120” • Internal DC blocking at RF input and output • High directivity, 17 dB typ. • Low noise figure • Output power, up to +11.4 dBm typ. |
Original |
DQ849 | |
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Contextual Info: High Directivity Monolithic Amplifier 1.5-5.9 GHz Product Features • 2.8V & 5V operation • Micro-miniature size .120”X.120” • Internal DC blocking at RF input and output • High directivity, 20-24 dB typ. • Wide bandwidth, 1.5 to 5.9 GHz • Low noise figure |
Original |
DQ849 | |
Contextual Info: High Directivity Monolithic Amplifier 0.5-2.5 GHz Product Features • 2.8V & 5V operation • Micro-miniature size .120”X.120” • Internal DC blocking at RF input and output • High directivity, 17 dB typ. • Low noise figure • Output power, up to +11.4 dBm typ. |
Original |
DQ849 2002/95/EC) | |
Contextual Info: High Directivity Monolithic Amplifier 0.5-2.5 GHz Product Features • 2.8V & 5V operation • Micro-miniature size .120”X.120” • Internal DC blocking at RF input and output • High directivity, 20 dB typ. • Low noise figure • Output power, up to +17.9 dBm typ. |
Original |
DQ849 50nditions | |
MNA-7Contextual Info: High Directivity Monolithic Amplifier 1.5-5.9 GHz Product Features • 2.8V & 5V operation • Micro-miniature size .120”X.120” • Internal DC blocking at RF input and output • High directivity, 20-24 dB typ. • Wide bandwidth, 1.5 to 5.9 GHz • Low noise figure |
Original |
DQ849 2002/95/EC) MNA-7 | |
Contextual Info: High Directivity Monolithic Amplifier 0.5-2.5 GHz Product Features • 2.8V & 5V operation • Micro-miniature size .120”X.120” • Internal DC blocking at RF input and output • High directivity, 20 dB typ. • Low noise figure • Output power, up to +19 dBm typ. |
Original |
DQ849 2002/95/EC) | |
Contextual Info: High Directivity Monolithic Amplifier 1.5-5.9 GHz Product Features • 2.8V & 5V operation • Micro-miniature size .120”X.120” • Internal DC blocking at RF input and output • High directivity, 20-24 dB typ. • Wide bandwidth, 1.5 to 5.9 GHz • Low noise figure |
Original |
DQ849 | |
Contextual Info: High Directivity Monolithic Amplifier 0.5-2.5 GHz Product Features • 2.8V & 5V operation • Micro-miniature size .120”X.120” • Internal DC blocking at RF input and output • High directivity, 17 dB typ. • Low noise figure • Output power, up to +11.4 dBm typ. |
Original |
DQ849 | |
Contextual Info: High Directivity Monolithic Amplifier 0.5-2.5 GHz Product Features • 2.8V & 5V operation • Micro-miniature size .120”X.120” • Internal DC blocking at RF input and output • High directivity, 17 dB typ. • Low noise figure • Output power, up to +12.2 dBm typ. |
Original |
DQ849 2002/95/EC) | |
Contextual Info: Plug-In Power Splitter/Combiner 2 Way-90° 50Ω PSCQ-2-120+ 80 to 120 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Power Input as a splitter 1W max. •lowinsertionloss,0.3dBtyp. |
Original |
Way-90Â PSCQ-2-120+ M131858 | |
Contextual Info: Raytheon Electronics Semiconductor Division TM C 2302 Image Manipulation Sequencer 40 MHz • 24-bit optional 36-bit positioning precision within the source image space, 48-bit internal precision • Low power CM OS process • Available in a 120-pin Plastic Pin Grid Array and 120-lead |
OCR Scan |
24-bit 36-bit) 48-bit 120-pin 120-lead C2302 TMC2301 C2246A C2249A C2242B |