120 A RECTIFIER DIODES Search Results

ir1j

Abstract: 2F P marking 10MQ100 10MQ100N AN-994
Contextual Info: PD-20520 rev. D 11/99 10MQ100N SCHOTTKY RECTIFIER 2.1 Amp SMA Description/Features Major Ratings and Characteristics Characteristics IF 10MQ100N Units DC 2.1 A VRRM 100 V I FSM @ tp = 5 µs sine 120 A VF @ 1.5Apk, TJ=125°C 0.68 V TJ range - 40 to 150 °C

STTH200L04TV1

Abstract: JESD97 STTH200L04
Contextual Info: STTH200L04TV1 Ultrafast high voltage rectifier Mian product characteristics IF AV up to 2 x 120 A VRRM 400 V Tj (max) 150° C VF (typ) 0.83 V trr (max) 50 ns A1 K1 A2 K2 K1 A1 K2 Features and benefits A2 ● Ultrafast switching ● Low reverse current ●

E78996 rectifier module

Contextual Info: UFL60FA60P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 60 A FEATURES • Two fully independent diodes • Ceramic fully insulated package VISOL = 2500 VAC • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape • Low forward voltage

byt79

Contextual Info: Philips Semiconductors Product specification Rectifier diodes ultrafast BYT79 series FEATURES SYMBOL QUICK REFERENCE DATA VR = 300 V/ 400 V/ 500 V • Low forward volt drop • Fast switching • Soft recovery characteristic • High thermal cycling performance

UFB60FA20P

Contextual Info: UFB60FA20P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 60 A FEATURES • Two fully independent diodes • Ceramic fully insulated package VISOL = 2500 VAC • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape • Low forward voltage

MURD330T4

Abstract: MURD330T4G U330
Contextual Info: MURD330 SWITCHMODE Power Rectifier DPAK Surface Mount Package These state−of−the−art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. Features • • • • http://onsemi.com ULTRAFAST RECTIFIER 3 A, 300 V

MGRB1018

Abstract: MGRB2018CT
Contextual Info: MOTOROLA Order this document by MGRB1018/D SEMICONDUCTOR TECHNICAL DATA Advance Information Power Manager MGRB1018 Gallium Arsenide Power Rectifier . . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features:

RUTTONSHA all diodes

Abstract: RUTTONSHA SILICON RECTIFIER 6 Fmr 60 25 fmr 160 RUTTONSHA SILICON RECTIFIER 6 F 6 FMR 40 RUTTONSHA RUTTONSHA 120 6 FMR 40 rectifier RUTTONSHA SILICON RECTIFIER 6 Fmr 120 RUTTONSHA type 6 fmr 100
Contextual Info: Ruttonsha International Rectifier Ltd. SILICON RECTIFIERS RUTTONSHA 3 & 6 Ampere Silicon Power Diodes FEATURES ❖ All diffused series. ❖ Available in normal & reverse polarity. ❖ Device conforms to IS 3700 III & IS 4400 (III). ❖ Device outline conforms to IS 5000 (Do. 4) except stud.

SURA8160T3G

Abstract: MURA160T3G
Contextual Info: MURA160T3G, SURA8160T3G Surface Mount Ultrafast Power Rectifier Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.

403D

Abstract: MURA260T3 MURA260T3G
Contextual Info: MURA260T3 Preferred Device Surface Mount Ultrafast Power Rectifier Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.

MUR220G

Abstract: MUR220 MUR220RL MUR220RLG
Contextual Info: MUR220 Preferred Device SWITCHMODEt Power Rectifier These state−of−the−art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. Features • • • • • • http://onsemi.com Ultrafast 25 Nanosecond Recovery Times

BYV541V-200

Abstract: BYV541V BYV54V BYV54V-200
Contextual Info: BYV54V BYV541V HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES n n n n n n SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED : Insulating voltage = 2500 VRMS

K2018

Abstract: ed2c
Contextual Info: SMBYT03 FAST RECOVERY RECTIFIER DIODES FEATURES VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING SURFACE MOUNT DEVICE s ct u d o r P e DESCRIPTION Single high voltage rectifier ranging from 200V to 400 V suited for Switch Mode Power Supplies and

VBE17-12NO7

Abstract: VUE22-12NO7
Contextual Info: VBE 17-12NO7 ECO-PAC TM Single Phase Rectifier Bridge IdAV = 19 A VRRM = 1200 V trr = 40 ns with Fast Recovery Epitaxial Diodes FRED VRSM VRRM V V 1200 1200 D Typ A N VBE 17-12NO7 K Symbol Conditions IdAV ① IdAVM TC = 85°C, module 19 90 A A IFSM TVJ = 45°C

BY133

Abstract: BY134 BY135 DO-204AL
Contextual Info: BY133 . BY135 BY133 . BY135 Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2011-01-10 Nominal current Nennstrom -0.1 5.1-0.1 Type +0.5 62.5 -2.5 Ø 2.6 Ø 0.77±0.07 Dimensions - Maße [mm] 1A Repetitive peak reverse voltage Periodische Spitzensperrspannung

BYW51-200

Abstract: BYW51F-200 BYW51FP-200 BYW51G-200 BYW51R-200
Contextual Info: BYW51/F/G/FP/R-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF AV 2 x 10 A VRRM 200 V Tj (max) 150 °C VF (max) 0.85 V trr (max) 25 ns A1 K A2 A2 K A1 TO-220FPAB BYW51FP-200 FEATURES AND BENEFITS SUITED FOR SMPS VERY LOW FORWARD LOSSES

vishay smd diode code marking

Contextual Info: VS-20ETS08SPbF, VS-20ETS12SPbF High Voltage Series Vishay Semiconductors Input Rectifier Diode, 20 A FEATURES Base cathode 2 1 Anode D2PAK • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS directive 2002/95/EC • Halogen-free according to IEC 61249-2-21

u1620r

Abstract: U1620R diode MURB1620CT MURB1620CTR MURB1620CTRT4 SMD310
Contextual Info: MURB1620CTR Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package . . . designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full-wave

Contextual Info: Bulletin 12031 /A International S Rectifier 70/300U R .d series STANDARD RECOVERY DIODES Stud Version 250A Features • Diffused diode ■ W ide cu rren t range ■ High vo ltag e ratings up to 1 6 00V ■ High surge current capab ilities ■ Stud catho de and stud an o d e version

Contextual Info: Bk MOSPEC U30D30 thru U30D60 Switchmode Dual Ultrafast Power Rectifiers ULTRA FAST RECTIFIERS . Designed for use in switching power supplies, inverters and as free wheeling diodes. These state-of-the-art devices have the following features: * * * * * * *

BYT08P-400

Contextual Info: BYT08P-400 BYT08PI-400 FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF AV 8A VRRM 400 V VF (max) 1.4 V trr (max) 35 ns ) s ( ct du A FEATURES AND BENEFITS • ■ ■ ■ K VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING

diode JD

Abstract: MUBW50-06A7 IGBT S 1377
Contextual Info: MUBW 50-06 A7 Converter - Brake - Inverter Module CBI2 21 D11 D13 22 D7 D15 7 1 2 3 D12 D14 D16 T1 D1 16 15 6 T7 14 23 T2 11 10 T3 18 17 D5 20 19 5 T4 D2 T5 D3 T6 D4 12 4 D6 13 24 8 NTC 9 Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600V

B180

Contextual Info: PL IA N T Features CO M • RoHS compliant* *R oH S ■ SMA package ■ Surface mount ■ Very low forward voltage drop CD214A-B120 ~B1100 Schottky Barrier Rectifier Chip Diode General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop

954A

Abstract: westcode n 600 ch 14 westcode n 600 ch 12 INR 14D 12D100 WESTCODE
Contextual Info: - ^/iDi \a/f T rn w t aQiu u un cf \Th SEMICONDUCTORS T E C H N IC A L P U B L IC A T IO N D P55 ISSUE1 1 1080 Msrch, Stud-Base Silicon Rectifier Diodes Type PCN/PCRÛ55 75amperes average: up to 1600 volts Vr r m R A T IN G S Maximum values at 175*0 Tj unless stated otherwise