12.75V PGM Search Results

Contextual Info: July 1998 SEMICONDUCTOR TM FM27LV010L 1,048,576-Bit 128Kx8 Low Voltage, Low Power EPROM • Programming Voltage +12.75V General Description ■ Typical programming time 50ps The FM27LV010 is a low-power 1Mbit, 3.3V-only one-time-programmable (OTP) read-only memory (EPROM), organized into

Contextual Info: SEMICONDUCTOR TM FM27LV512L 524,288-Bit 64Kx8 Low Voltage, Low Power EPROM General Description • Programming Voltage +12.75V ■ Typical programming time 50ns The FM27LV512 is a low voltage, low-power 512Kbit, 3.3V-only one-time-programmable (OTP) read-only memory (EPROM), or­

Contextual Info: July 1998 SEMICONDUCTOR TM FM27LV512L 524,288-Bit 64Kx8 Low Voltage, Low Power EPROM • Programming Voltage +12.75V General Description ■ Typical programming time 50ps The FM27LV512 is a low voltage, low-power 512Kbit, 3.3V-only one-time-programmable (OTP) read-only memory (EPROM), or­

M27C2001-15F1

Abstract: 27c2001 M27C2001
Contextual Info: SGS-THOMSON M27C2001 IL I 2048K 256K x 8 CMOS UV EPROM VERY FAST ACCESS TIME : 120 ns. COMPATIBLE TO HIGH SPEED MICROPRO­ CESSORS ZERO WAIT STATE. LOW POWER "CMOS" CONSUMPTION : _ Operating current 35 mA _ Stand by current 200 jiA. PROGRAMMING VOLTAGE 12.75V.

Contextual Info: July 1998 SEMICONDUCTOR TM FM27C010L 1,048,576-Bit 128Kx8 Low Power Fast EPROM • Programming Voltage +12.75V General Description ■ Typical programming time 50ps The FM27C010 is a low-power 1Mbit, 5V-only one-time-programmable (OTP) read-only memory (EPROM), organized into 128K

MX26C512AC-15

Contextual Info: MX26C512A 512K-BIT [64K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM FEATURES • • • • • • • 64K x 8 organization +5V operating power supply +12.75V program/erase voltage Electric erase instead of UV light erase Fast access time: 70/90/100/120/150 ns

M27C1024

Contextual Info: SGS-THOMSON M 27C1024 m 1024K 64K x 16 CMOS UV EPROM - OTP ROM VERY FAST ACCESS TIME : 120 ns. COMPATIBLE WITH HIGH SPEED MICRO­ PROCESSORS, ZERO WAIT STATE. LOW "CMOS" CONSUMPTION : - Active Current 35 mA - Standby Current 1 mA. PROGRAMMING VOLTAGE 12.75V.

A27020-70F

Abstract: A27020-70 a2702 1.5Volt reference diode AMIC A27020 1N914 A27020
Contextual Info: A27020 Series 256K X 8 OTP CMOS EPROM Document Title 256K X 8 OTP CMOS EPROM Revision History History Issue Date Remark 0.0 Initial issue August 2, 2002 Preliminary 1.0 Final version release October 7, 2003 Final 1.1 Change Vpp from 12.75V to 12.25V June 16, 2005

26C1000

Abstract: IN3064 MX26C1000A MX27C1000
Contextual Info: INDEX MX26C1000A 1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM FEATURES • • • • • • • 128K x 8 organization +5V operating power supply +12.75V program/erase voltage Electric erase instead of UV light erase Fast access time: 70/90/100/120/150 ns

AMIC A27020

Abstract: A27020-70
Contextual Info: A27020 Series 256K X 8 OTP CMOS EPROM Document Title 256K X 8 OTP CMOS EPROM Revision History History Issue Date Remark 0.0 Initial issue August 2, 2002 Preliminary 1.0 Final version release October 7, 2003 Final 1.1 Change Vpp from 12.75V to 12.25V June 16, 2005

1N914

Abstract: EN27C512
Contextual Info: EN27C512 EN27C512 512KBIT EPROM 64K x 8 FEATURES • Latch-Up Immunity to 100mA • Fast Read Access Time : -45, -55, -70, and -90ns from -1V to VCC + 1V • Single 5V Power Supply • Two-Line Control ( OE & CE ) • Programming Voltage +12.75V • Standard Product Identification Code

26c512

Abstract: MX26C512 MX26C512A IN3064 MX27C512 PM0455 26C512A MX26C512APC-12
Contextual Info: INDEX MX26C512A 512K-BIT [64K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM FEATURES • • • • • • • 64K x 8 organization +5V operating power supply +12.75V program/erase voltage Electric erase instead of UV light erase Fast access time: 70/90/100/120/150 ns

1N914

Abstract: EN27C010
Contextual Info: EN27C010 EN27C010 1Megabit EPROM 128K x 8 FEATURES • Latch-Up Immunity to 100mA • Fast Read Access Time : -45, -55, -70, and -90ns from -1V to VCC + 1V • Single 5V Power Supply • Two-Line Control ( OE & CE ) • Programming Voltage +12.75V • Standard Product Identification Code

Contextual Info: MXIC 51 2K -B ITI64K x 8 ] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM FEATURES • • • • • • • M X26C 512A 64K x 8 organization +5V operating power supply +12.75V program/erase voltage Electric erase instead of UV light erase Fast access time: 70/90/100/120/150 ns

27F256

Abstract: W 27f256 290158 170P2
Contextual Info: PKEyßälO RlM IY in te i 27F256 256K 32K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming — 100 us Typical Byte-Program — 4 Second Chlp-Program EPROM-Compatible 12.75V Vpp Supply 100 Erase/Program Cycles Minimum

1000AM

Contextual Info: M X 26 C 1 OOOA 1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROG RAMMABLE-EPROM FEATURES • 12 8K x 8 organization O perating current: 30m A • +5V operating pow er supply S tandby current: 100uA • +12.75V program /erase voltage 100 m inim um erase/program cycles

1N914

Abstract: EN27C020
Contextual Info: EN27C020 EN27C020 2Megabit EPROM 256K x 8 FEATURES • Latch-Up Immunity to 100mA • Fast Read Access Time: -45, -55, -70, and -90ns from -1V to V CC + 1V • Single 5V Power Supply • Two-Line Control ( OE & CE ) • Programming Voltage +12.75V • Standard Product Identification Code

26C512

Abstract: IN3064 MX26C512 MX26C512A MX27C512
Contextual Info: Introduction Selection Guide MX26C512A 512K-BIT[64K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM FEATURES • • • • • • • 64K x 8 organization +5V operating power supply +12.75V program/erase voltage Electric erase instead of UV light erase Fast access time: 70/90/100/120/150 ns

Contextual Info: S G S -T H O M S O N M 27C1024 1024K 64K x 16 CMOS UV EPROM - OTP ROM VERY FAST ACCESS TIME : 120 ns. COMPATIBLE WITH HIGH SPEED M ICRO­ PROCESSORS, ZERO W AIT STATE. LOW "CMOS'' CONSUMPTION : - Active Current 35 mA - Standby Current 1 mA. PROGRAMMING VOLTAGE 12.75V.

Contextual Info: FM27C010L • "g " ™ " PRELIMINARY FAIRCHILD ì M I C O N O U C T O R tm FM27C010L 1,048,576-Bit 128Kx8 Low Power Fast EPROM ■ Programming Voltage +12.75V General Description ■ Typical programming time 50(is The FM27C010 is a iow-power 1Mbit, 5V-only one-time-program­

Contextual Info: w Ê Ê m » - » MX26C51 2A = • 512K-BIT [64K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM FEATURES • 64K x 8 organization • O perating current: 30m A • +5V operating p ow er supply • S tandby current: 100uA • +12.75V program /erase voltage • 100 m inim um erase/program cycles

Contextual Info: C H IL D April 1998 S E M I C O N D U C T O R TM FM27LV010L 1,048,576-Bit 128Kx8 Low Voltage, Low Power EPROM • Programming Voltage +12.75V General Description ■ Typical programming time 50ps The FM27LV010 is a low-power 1Mbit, 3.3V-only one-time-programmable (OTP) read-only memory (EPROM), organized into

6755w

Contextual Info: Ju ly 1998 s e m ic o n d u c t o r FM27LV512L 524,288-Bit 64Kx8 Low Voltage, Low Power EPROM General Description • Programming Voltage +12.75V ■ Typical programming time 50|is The FM27LV512 is a low voltage, low-power 512Kbit, 3.3V-only one-time-programmable (OTP) read-only memory (EPROM), or­

Contextual Info: S E M IC O N D L C T D R A p ril 1 9 9 8 tm FM27C010L 1,048,576-Bit 128Kx8 Low Power Fast EPROM • Programming Voltage +12.75V General Description ■ Typical programming time 50ps The FM27C010 is a low-power 1Mbit, 5V-only one-time-programmable (OTP) read-only memory (EPROM), organized into 128K