12 PULSE DIODE RECTIFIER Search Results

skiip 613 gb

Abstract: semikron skiip 613 skiip 513 gb semikron B6U 690 930 semikron skch b2hkf Semikron B2HKF SEMISTACK IGBT semikron skiip 513 gb B2HKF semikron B6C
Contextual Info: Section 12: SEMISTACK Thyristor, Rectifier Diode and IGBT Assemblies Summary of Types 3 SEMISTACK® Converter Assemblies using thyristors and diodes 2) Circuit 1) Page B2U Non-controllable rectifier stacks in two-pulse bridge connection. . . . . . . . . . . . . . . . . . . . . B 12 – 2

Contextual Info: □IXYS Fast Recovery Epitaxial Diode FRED DSEI 12 IFAVM vrRRM V 1200 Vrrm 1200 DSEI 12-12A Test C onditions ^FRMS ^FRM "^"vj — "l"vjM Tc = 100°C; rectangular, d = 0.5 tp < 10 ns; rep. rating, pulse width limited byTVJM ^FSM TVJ = 45°C; Maximum Ratings

Contextual Info: DSEI 12-12AZ Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 IFAV = 11 A VRRM = 1200 V trr = 50 ns 1 3 Type DSEI 12-12AZ Symbol Conditions IFRMS IFAVM  IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5 tp < 10 µs; rep. rating, pulse width limited by TVJM

Contextual Info: DSEI 12-12AZ Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 IFAV = 11 A VRRM = 1200 V trr = 50 ns 1 3 Type DSEI 12-12AZ Symbol Conditions IFRMS IFAVM  IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5 tp < 10 µs; rep. rating, pulse width limited by TVJM

Contextual Info: Fast Recovery Epitaxial Diode FRED VRSM V 1000 VRRM DSEI 12 IFAVM = 12 A VRRM = 1000 V = 50 ns trr C A Type TO-220 AC V 1000 DSEI 12-10A C C A Symbol Test Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5 t P < 10 µs; rep. rating, pulse width limited by TVJM

Contextual Info: DSEI 12-06AS Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 640 600 IFAV = 14 A VRRM = 600 V trr = 35 ns 1 3 Type 2/4 DSEI 12-06AS Symbol Conditions IFRMS IFAVM  IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5 tp < 10 µs; rep. rating, pulse width limited by TVJM

Contextual Info: Fast Recovery Epitaxial Diode FRED DSEI 12 VRSM A V VRRM Type C IFAVM = 12 A VRRM = 1000 V = 50 ns trr TO-220 AC C V A 1000 1000 DSEI 12-10A C A = Anode, C = Cathode Test Conditions IFRMS IFAVM ¬ IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by TVJM

IXYS 12-10A

Contextual Info: Fast Recovery Epitaxial Diode FRED DSEI 12 VRSM A V VRRM Type C IFAVM = 12 A VRRM = 1000 V trr = 50 ns TO-220 AC C V A 1000 1000 DSEI 12-10A C A = Anode, C = Cathode Test Conditions IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM

IXYS DSEI 12-06A

Contextual Info: Fast Recovery Epitaxial Diode FRED VRSM V 640 VRRM DSEI 12 IFAVM = 14 A VRRM = 600 V = 35 ns trr C A Type TO-220 AC V 600 DSEI 12-06A C C A Symbol Test Conditions Maximum Ratings IFRMS IFAVM ① IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5 t P < 10 µs; rep. rating, pulse width limited by TVJM

12-12A

Abstract: IXYS rectifiers dsei12
Contextual Info: Fast Recovery Epitaxial Diode FRED VRSM V 1200 VRRM DSEI 12 IFAVM = 11 A VRRM = 1200 V = 50 ns trr C A Type TO-220 AC V 1200 DSEI 12-12A C C A Symbol Test Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5 t P < 10 µs; rep. rating, pulse width limited by TVJM

12-12A

Contextual Info: Fast Recovery Epitaxial Diode FRED DSEI 12 VRSM A V VRRM Type C IFAVM = 11 A VRRM = 1200 V trr = 50 ns TO-220 AC C V A 1200 1200 DSEI 12-12A C A = Anode, C = Cathode Test Conditions IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM

Contextual Info: n ixY S Fast Recovery Epitaxial Diode FRED v RSM V* RRM V DSEI12 IFAVM f\ A Type V RRM 12 A 1000 V t 50 ns TO-220 AC 1 \ C V DSEi 12-10 A 1000 1 0 00 Symbol Test Conditions Maximum Ratings ^FRM T1 VJ = T1 VJM Tc = 100°C; rectangular, d = 0.5 tp < 10 ns; rep. rating, pulse width limited by TVJM

Contextual Info: Fast Recovery Epitaxial Diode FRED DSEI 12 VRSM A V VRRM Type C IFAVM = 11 A VRRM = 1200 V = 50 ns trr TO-220 AC C V A 1200 1200 DSEI 12-12A C A = Anode, C = Cathode Test Conditions IFRMS IFAVM ¬ IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by TVJM

DSEI 12 06A

Abstract: IR 1206A IXYS DSEI 12-06A IXYS DSEI 2
Contextual Info: DSEI 12-06A Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 640 600 IFAV = 14 A VRRM = 600 V trr = 35 ns Type A C TO-220 AC C  A DSEI 12-06A C A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM  IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5 tp < 10 µs; rep. rating, pulse width limited by TVJM

Contextual Info: APTCV60HM70RT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C Application • Solar converter

L7612

Abstract: STPS30L60C STPS30 AN1768 AN2025 STPS30L60CFP STPS30L60CG STPS30L60CR STPS30L60CT STPS30L60CW
Contextual Info: STPS30L60C Power Schottky rectifier Features • Low forward voltage drop ■ Negligible switching losses ■ Low thermal resistance ■ Avalanche capability specified A1 K A2 A2 K A1 TO-220FPAB STPS30L60CFP Description These dual center tap Schottky rectifiers are

AO4922

Abstract: ao4922L
Contextual Info: AO4922 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description The AO4922 uses advanced trench technology to provide excellent R DS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. A monolithically integrated Schottky

AO4932

Abstract: diode AR S1 77
Contextual Info: AO4932 Asymmetric Dual N-Channel MOSFET SRFET General Description Product Summary The AO4932 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A

AO4932

Contextual Info: AO4932 Asymmetric Dual N-Channel MOSFET SRFET General Description Product Summary The AO4932 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A

Contextual Info: FastIRFET IRFH4213DPbF HEXFET Power MOSFET VDSS RDS on max (@ VGS = 10V) (@ VGS = 4.5V) 25 V 1.35 m 1.90 Qg (typical) 25 nC ID (@TC (Bottom) = 25°C) 100 A PQFN 5X6 mm Applications  Synchronous Rectifier MOSFET for Synchronous Buck Converters

IRFSL11N50A

Abstract: 4.5V TO 100V INPUT REGULATOR
Contextual Info: PD- 91847B IRFSL11N50A HEXFET Power MOSFET l l l l l Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paraleling Simple Drive Requirements D VDSS = 500V RDS on = 0.55Ω G ID = 11A S Description Third Generation HEXFET® Power MOSFETs from International Rectifier

STPS30L120CT

Abstract: STPS30L120 STPS30L120C stps30l12
Contextual Info: STPS30L120C Power Schottky rectifier Features A1 • High junction temperature capability A2 ■ Avalanche capability specified ■ Low forward voltage drop current ■ High frequency operation ■ Insulated package: TO-220FPAB insulating voltage = 1500 V rms

Contextual Info: STTH1602C High frequency ultrafast diode Datasheet - production data Description A1 Dual center tap rectifier suited for switch mode power supplies and high frequency DC to DC converters. K A2 Packaged in TO-220AB, D2PAK, TO-220FPAB and I2PAK, this device is intended for use in low

IRF7836PBF

Contextual Info: PD - 97171 IRF7836PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS on at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage