12 MOSFET 3PIN Search Results

Contextual Info: Si1965DH Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 12 ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) a

Contextual Info: New Product Si1442DH Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 a RDS(on) () (Max.) ID (A) 0.020 at VGS = 4.5 V 4 0.024 at VGS = 2.5 V 4 0.030 at VGS = 1.8 V 4 Qg (Typ.) 13.1 nC • TrenchFET Power MOSFET • 100 % Rg Tested

si1442

Abstract: SI1442DH
Contextual Info: New Product Si1442DH Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 a RDS(on) () (Max.) ID (A) 0.020 at VGS = 4.5 V 4 0.024 at VGS = 2.5 V 4 0.030 at VGS = 1.8 V 4 Qg (Typ.) 13.1 nC • TrenchFET Power MOSFET • 100 % Rg Tested

Contextual Info: New Product Si1442DH Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 a RDS(on) () (Max.) ID (A) 0.020 at VGS = 4.5 V 4 0.024 at VGS = 2.5 V 4 0.030 at VGS = 1.8 V 4 Qg (Typ.) 13.1 nC • TrenchFET Power MOSFET • 100 % Rg Tested

"leadframe material" DIP 20

Abstract: MARKING BB SOT363 bb sc70-6
Contextual Info: Si1417EDH Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.085 at VGS = - 4.5 V - 3.3 0.115 at VGS = - 2.5 V - 2.9 0.160 at VGS = - 1.8 V - 2.4 • Halogen-free According to IEC 61249-2-21 Definition

bb sc70-6

Abstract: MARKING BB sc70-6
Contextual Info: Si1417EDH Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.085 at VGS = - 4.5 V - 3.3 0.115 at VGS = - 2.5 V - 2.9 0.160 at VGS = - 1.8 V - 2.4 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: Si1417EDH Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.085 at VGS = - 4.5 V - 3.3 0.115 at VGS = - 2.5 V - 2.9 0.160 at VGS = - 1.8 V - 2.4 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: Si1417EDH Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.085 at VGS = - 4.5 V - 3.3 0.115 at VGS = - 2.5 V - 2.9 0.160 at VGS = - 1.8 V - 2.4 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: Si1917EDH Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.370 at VGS = - 4.5 V - 1.15 0.575 at VGS = - 2.5 V - 0.92 0.800 at VGS = - 1.8 V - 0.78 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: Si1917EDH Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.370 at VGS = - 4.5 V - 1.15 0.575 at VGS = - 2.5 V - 0.92 0.800 at VGS = - 1.8 V - 0.78 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: Si1917EDH Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.370 at VGS = - 4.5 V - 1.15 0.575 at VGS = - 2.5 V - 0.92 0.800 at VGS = - 1.8 V - 0.78 • Halogen-free According to IEC 61249-2-21 Definition

6pin MARKING code T

Abstract: 071 0039
Contextual Info: Si1917EDH Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.370 at VGS = - 4.5 V - 1.15 0.575 at VGS = - 2.5 V - 0.92 0.800 at VGS = - 1.8 V - 0.78 • Halogen-free According to IEC 61249-2-21 Definition

si1401e

Abstract: 70080
Contextual Info: New Product Si1401EDH Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 4.5 V -4 VDS (V) - 12 0.046 at VGS = - 2.5 V -4 0.070 at VGS = - 1.8 V -4 0.110 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21

Contextual Info: Si1557DH Vishay Siliconix N- and P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 12 - 12 RDS(on) (Ω) ID (A) 0.235 at VGS = 4.5 V 1.3 0.280 at VGS = 2.5 V 1.2 0.340 at VGS = 1.8 V 1.0 0.535 at VGS = - 4.5 V - 0.86 0.880 at VGS = - 2.5 V

Contextual Info: New Product Si1401EDH Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 4.5 V -4 VDS (V) - 12 0.046 at VGS = - 2.5 V -4 0.070 at VGS = - 1.8 V -4 0.110 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21

sc 1287

Abstract: SI1422DH-T1-GE3
Contextual Info: New Product Si1422DH Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.026 at VGS = 4.5 V 4 0.030 at VGS = 2.5 V 4 0.036 at VGS = 1.8 V 4 VDS (V) 12 Qg (Typ.) 7.5 nC • Halogen-free According to IEC 61249-2-21 Definition

sc 1287

Contextual Info: New Product Si1422DH Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.026 at VGS = 4.5 V 4 0.030 at VGS = 2.5 V 4 0.036 at VGS = 1.8 V 4 VDS (V) 12 Qg (Typ.) 7.5 nC • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: New Product Si1401EDH Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 4.5 V -4 VDS (V) - 12 0.046 at VGS = - 2.5 V -4 0.070 at VGS = - 1.8 V -4 0.110 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21

Contextual Info: New Product Si1401EDH Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 4.5 V -4 VDS (V) - 12 0.046 at VGS = - 2.5 V -4 0.070 at VGS = - 1.8 V -4 0.110 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21

Contextual Info: Si1557DH Vishay Siliconix N- and P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 12 - 12 RDS(on) (Ω) ID (A) 0.235 at VGS = 4.5 V 1.3 0.280 at VGS = 2.5 V 1.2 0.340 at VGS = 1.8 V 1.0 0.535 at VGS = - 4.5 V - 0.86 0.880 at VGS = - 2.5 V

Contextual Info: New Product Si1422DH Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.026 at VGS = 4.5 V 4 0.030 at VGS = 2.5 V 4 0.036 at VGS = 1.8 V 4 VDS (V) 12 Qg (Typ.) 7.5 nC • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: Si1307EDL Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.290 at VGS = - 4.5 V ± 0.91 0.435 at VGS = - 2.5 V ± 0.74 0.580 at VGS = - 1.8 V ± 0.64 • Halogen-free According to IEC 61249-2-21 Definition

max8356

Contextual Info: 19-2820; Rev 1; 2/12 MAX8536 Evaluation Kit The MAX8536 evaluation EV kit circuit demonstrates the functionality of the MAX8536 ORing MOSFET controller that provides redundancy and fault isolation to highly reliable power systems. The EV kit board can operate in 5V and 3.3V systems. The EV kit is configured for 5V operation.

16TPC33M

Abstract: 6TPC100M EP10QY03 JMK212BJ475KG LMK212BJ105MG MAX1765 MAX1765EVKIT UMK212BJ104KG
Contextual Info: 19-1888; Rev 0; 12/00 MAX1765 Evaluation Kit The MAX1765 features an internal N-channel MOSFET switch and a P-channel synchronous rectifier, and a pin-selectable forced pulse-width modulation PWM mode. The MAX1765 EV kit demonstrates low quiescent current and high efficiency (up to 96%) for maximum battery life. Operation at 1MHz allows the use of