12 BIT SYNCHRONOUS COUNTER Search Results

Contextual Info: SONY CXK77V3211Q 12/14 32768-word by 32-bit High Speed Synchronous Static RAM Description The CXK77V3211Q is a 32K x 32 high performance synchronous SRAM with a 2-bit burst counter and output register. All synchronous inputs pass through register controlled

TC59S1616

Abstract: TC59S1616AFT TC59S1608AF
Contextual Info: T O S H IB A TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 524,288-WORD X 2 BANK X 16-BIT SYNCHRONOUS DYNAMIC RAM 1,048,576-WORDx2 BANKx8-BIT SYNCHRONOUS DYNAMIC RAM

sv005

Abstract: 74LV161 74LV161PW
Contextual Info: INTEGRATED CIRCUITS 74LV161 Presettable synchronous 4-bit binary counter; asynchronous reset Product specification Supersedes data of 1997 Feb 12 IC24 Data Handbook Philips Semiconductors 1997 May 15 Philips Semiconductors Product specification Presettable synchronous 4-bit binary counter;

CXK77V3211Q

Contextual Info: CXK77V3211Q -12/14 32768-word by 32-bit High Speed Synchronous Static RAM For the availability of this product, please contact the sales office. Description The CXK77V3211Q is a 32K x 32 high performance synchronous SRAM with a 2-bit burst counter and output register. All synchronous inputs pass through

Contextual Info: TOSHIBA TC55V1325FF-7,-8,-10,-12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32,768-WORD BY 32-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V1325FF is a 1,048,576-bit synchronous pipelined burst static random access memory SRAM

Contextual Info: TO SHIBA TC55V1325FF-7,-8,-10,-12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32,768-WORD BY 32-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V1325FF is a 1,048,576-bit synchronous pipelined burst static random access memory SRAM

Contextual Info: TO SHIBA TC55V1325FF-7,-8,-10,-12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32,768-WORD BY 32-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V1325FF is a 1,048,576-bit synchronous pipelined burst static random access memory SRAM

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11052-1E MEMORY CMOS 4 x 512 K × 32 BIT SYNCHRONOUS DYNAMIC RAM MB811L643242B-10/-12/-15/-10L/-12L/-15L CMOS 4-Bank × 524,288-Word × 32 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB811L643242B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

A43L0616BV-7F

Abstract: A43L0616B A43L0616BV
Contextual Info: A43L0616B 512K X 16 Bit X 2 Banks Synchronous DRAM Document Title 512K X 16 Bit X 2 Banks Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue May 12, 2003 Preliminary 0.1 Change AC Timing & DC Value February 27, 2006 1.0 Final version release

Contextual Info: SONY CXK77V3211Q-11/12/14 PRELIMINARY D escription The CXK77V3211Q is a 32K x 32 high performance synchronous SRAM with a 2-bit burst counter and output register. All synchronous inputs pass through register controlled by a positive-edge-triggered single clock

TC59S16

Abstract: TC59S1616A
Contextual Info: TO S H IB A TENTATIVE TC59S16 1 6 A F T -8.-10 .-12 A .-12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 524,288-WORD x 2 BANK x 16-BIT SYNCHRONOUS DYNAMIC RAM DESCRIPTION The TC59S1616AFT is CMOS synchronous dynamic random access memory devices, organized as 524,

l64324

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET D S 0 5 -1 1 0 5 2 -1 E MEMORY CMOS 4 X 512 K x 32 BIT SYNCHRONOUS DYNAMIC RAM MB811L643242B -10/-12/-15/-10L/-12L/-15L CMOS 4-Bank x 524,288-Word x 32 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu M B811L643242B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

Contextual Info: TC59GJ632AFB-80,-10,-12 TOSHIBA TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT StU CbN ^pN bLIJH IC 262,144-WORDX 2-BANKX32-BIT SYNCHRONOUS GRAPHICS RAM DESCRIPTION The TC59G1632AFB is a CM OS synchronous graphics random access memory or& ajiize^a* 262.144

TC59G1631

Contextual Info: TO SHIBA TC59G1631AFB-80.-10.-12 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 262,144-WORD x 2-BANK x 32-BIT SYNCHRONOUS GRAPHICS RAM DESCRIPTION The TC59G1631AFB is a CMOS synchronous graphics random access memory organized as 262, 144

HM5216405

Abstract: HM5216405LTT-10H HM5216405TT-10H HM5216405TT-12 HM5216805 HM5216805LTT-10H HM5216805TT-10H HM5216805TT-12 Hitachi DSA00196
Contextual Info: HM5216805 Series, HM5216405 Series 1,048,576-word x 8-bit × 2-bank Synchronous Dynamic RAM 2,097,152-word × 4-bit × 2-bank Synchronous Dynamic RAM ADE-203-304D Z Rev. 4.0 Jun. 12, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5216805 Series, HM5216405

Contextual Info: HM5216805 Series, HM5216405 Series 1,048,576-word x 8-bit x 2-bank Synchronous Dynamic RAM 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-304D Z Rev. 4.0 Jun. 12, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5216805 Series,

Contextual Info: SN54LV163A, SN74LV163A 4-BIT SYNCHRONOUS BINARY COUNTERS SCLS405F − APRIL 1998 − REVISED APRIL 2005 D Synchronous Counting D Synchronously Programmable D Ioff Supports Partial-Power-Down Mode 16 2 15 3 14 4 13 12 5 6 11 7 10 8 9 VCC RCO QA QB QC QD ENT

Contextual Info: T O S H IB A TC59G1631 AFB-80,-10,-12 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 262,144-WORD x 2-BANK x 32-BIT SYNCHRONOUS GRAPHICS RAM DESCRIPTION The TC59G1631AFB is a CMOS synchronous graphics random access m em ory organized as 2 6 2,14 4

free circuit Dvd eprom programmer

Contextual Info: CY2077 High-accuracy EPROM Programmable Single-PLL Clock Generator Features • Sixteen selectable post-divide options, using either PLL or reference oscillator/external clock ■ Programmable PWR_DWN or OE pin, with asynchronous or synchronous modes ■ High-accuracy PLL with 12-bit multiplier and 10-bit divider

non interruptible and burst and memory

Abstract: LC382161AT
Contextual Info: SA 0O CMOS LSI LC 382161A T -10/12/15 2 MEG 65536 Words X 16 Bits X 2 Banks Synchronous DRAM Target Specifications Overview The LC382161AT product is a 3.3V single-voltage power supply Synchronous DRAM (SDRAM) with a 65536-word x 16-bit x 2-bank organization. This SDRAM features a large capacity, high speed, and low

MN4SV4160T-10

Abstract: MN4SV4160T-12 MN4SV4160T-15
Contextual Info: Panasonic 4M bit Synchronous Dynamic RAM 131,072-word x 16-bit x 2-bank 1,024 Refresh P/N: MN4SV4160T-10 MN4SV4160T-12 MN4SV4160T-15 The technical information described herein provide the preliminary characteristics and the application circuit of a respective product, not intended to guarantee or permit a license for the

HEF4516B

Abstract: HEF4516BP HEF4516BT JESD22-A114E ZO 405 me
Contextual Info: HEF4516B Binary up/down counter Rev. 04 — 12 March 2009 Product data sheet 1. General description The HEF4516B is an edge-triggered synchronous 4-bit binary up/down counter with a clock input CP , an up/down count control input (UP/DN), an active LOW count enable

74HC40103

Abstract: CMOS 4000B series device "8-bit binary counter" 8-bit binary counter Synchronous 8-Bit Binary Counters 74HC40103 Logic Family Specifications ns 1000 n 4000B 74HC40103D 74HC40103DB
Contextual Info: 74HC40103 8-bit synchronous binary down counter Rev. 03 — 12 November 2004 Product data sheet 1. General description The 74HC40103 is a high-speed Si-gate CMOS device and are pin compatible with the 40103 of the 4000B series. The 74HC40103 is specified in compliance with JEDEC

DC-M4 diode

Abstract: IRF7832 1N4148 ADP3207 ADP3419 IR7832 IRF7821
Contextual Info: 7-Bit Programmable Multiphase Mobile CPU Synchronous Buck Controller ADP3207 FEATURES FUNCTIONAL BLOCK DIAGRAM VCC VRPM RRPM RT RAMPADJ 31 EN 1 12 13 14 15 ADP3207 UVLO SHUTDOWN AND BIAS OSCILLATOR CMP – TTSENSE 30 VRTT 29 CURRENT BALANCING CIRCUIT THERMAL