11A 650V Search Results

B11NK50Z

Abstract: p11nk50zfp P11NK50 p11nk50z P11NK
Contextual Info: STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-channel 650V @ tjmax-0.4Ω -11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET General features Type VDSS RDS on ID STP11NM60 650 V <0.45Ω 11A STP11NM60FP 650 V <0.45Ω 11A STB11NM60 650 V <0.45Ω 11A STB11NM60-1

p11nk60zfp

Abstract: P11NK60Z STP11NK60ZFP p11nk60 stp11nk60 STP11NK60Z B11NK60Z P11NK STB11NK60ZT4 STB11NK60
Contextual Info: STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-channel 650V @ tjmax-0.4Ω -11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET General features Type VDSS RDS on ID STP11NM60 650 V <0.45Ω 11A STP11NM60FP 650 V <0.45Ω 11A STB11NM60 650 V <0.45Ω 11A STB11NM60-1

p11nm60fp

Abstract: P11NM60
Contextual Info: STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-channel 650V @ TJmax - 0.4Ω - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET General features Type VDSS @TJ=TJmax RDS(on) ID STP11NM60 650V <0.45Ω 11A STP11NM60FP 650V <0.45Ω 11A STB11NM60 650V <0.45Ω

p11nm60fp

Abstract: p11nm60 b11nm60 p11nm60 data sheet B11NM60-1 STB11NM60 STB11NM60-1 STB11NM60T4 STP11NM60 STP11NM60FP
Contextual Info: STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-channel 650V @ TJmax - 0.4Ω - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET General features Type VDSS @TJ=TJmax RDS(on) ID 3 STP11NM60 650V <0.45Ω 11A STP11NM60FP 650V <0.45Ω 11A STB11NM60 650V

p11nk60zfp

Abstract: P11NK60Z STP11NK60Z p11nk60 STB11NK60
Contextual Info: STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-channel 650V @ TJmax - 0.4Ω - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET General features Type VDSS @TJ=TJmax RDS(on) ID 3 STP11NM60 650 V <0.45Ω 11A STP11NM60FP 650 V <0.45Ω 11A STB11NM60 650 V

Contextual Info: AOW11S65/AOWF11S65 650V 11A α MOS TM Power Transistor General Description Product Summary The AOW11S65 & AOWF11S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.

Contextual Info: Ordering number : ENA0556D 2SK4088LS N-Channel Power MOSFET http://onsemi.com 650V, 11A, 0.85Ω, TO-220F-3FS Features • • ON-resistance RDS on =0.65Ω (typ.) 10V drive • Input capacitance Ciss=1000pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: Ordering number : ENA0556D 2SK4088LS N-Channel Power MOSFET http://onsemi.com 650V, 11A, 0.85Ω, TO-220F-3FS Features • • ON-resistance RDS on =0.65Ω (typ.) 10V drive • Input capacitance Ciss=1000pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: AOT11S65/AOB11S65/AOTF11S65 650V 11A α MOS TM Power Transistor General Description Product Summary The AOT11S65 & AOB11S65 & AOTF11S65 have been TM fabricated using the advanced αMOS high voltage process that is designed to deliver high levels of performance and robustness in switching applications.

Contextual Info: AOT11S65/AOB11S65/AOTF11S65 650V 11A α MOS TM Power Transistor General Description Product Summary The AOT11S65 & AOB11S65 & AOTF11S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.

Contextual Info: AOT11S65/AOB11S65/AOTF11S65 650V 11A α MOS TM Power Transistor General Description Product Summary The AOT11S65 & AOB11S65 & AOTF11S65 have been TM fabricated using the advanced αMOS high voltage process that is designed to deliver high levels of performance and robustness in switching applications.

11NM60

Abstract: STP11NM60FP 11A 650V MOSFET STB11NM60 STB11NM60-1 STP11NM60
Contextual Info: STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-CHANNEL 650V@Tjmax 0.4Ω - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET TYPE VDSS @ Tjmax STP11NM60 STP11NM60FP STB11NM60 STB11NM60-1 650 V 650 V 650 V 650 V RDS(on) < 0.45 < 0.45 < 0.45 < 0.45 Ω Ω

Mosfet

Abstract: SSF11NS65 diode 945
Contextual Info: SSF11NS65 650V N-Channel MOSFET Main Product Characteristics VDSS 650V RDS on 0.36ohm(typ.) ID 11A Marking and Pin TO-220 Schematic Diagram Assignment Features and Benefits  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge

Mosfet

Abstract: SSF11NS65F
Contextual Info: SSF11NS65F 650V N-Channel MOSFET Main Product Characteristics VDSS 650V RDS on 0.36ohm(typ.) ID 11A TO220F Marking and Pin Schematic Diagram Assignment Features and Benefits  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge

FCPF22N60NT

Abstract: FCP22N60N
Contextual Info: SupreMOSTM FCP22N60N / FCPF22N60NT tm N-Channel MOSFET 600V, 22A, 0.165Ω Features Description • RDS on = 0.140Ω ( Typ.)@ VGS = 10V, ID = 11A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling

11A 650V MOSFET

Abstract: FCP22N60N FCPF22N60NT
Contextual Info: SupreMOSTM FCP22N60N / FCPF22N60NT tm N-Channel MOSFET 600V, 22A, 0.165Ω Features Description • RDS on = 0.140Ω ( Typ.)@ VGS = 10V, ID = 11A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling

Contextual Info: ICE11N65FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 11A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.25Ω Typ Qg VDS = 480V 59nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability

FCA22N60N

Contextual Info: SupreMOSTM FCA22N60N tm N-Channel MOSFET 600V, 22A, 0.165Ω Features Description • RDS on = 0.140Ω ( Typ.)@ VGS = 10V, ID = 11A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior

FCH22N60N

Abstract: FCH22N60 11A 650V MOSFET
Contextual Info: SupreMOSTM FCH22N60N tm N-Channel MOSFET 600V, 22A, 0.165Ω Features Description • RDS on = 0.140Ω ( Typ.)@ VGS = 10V, ID = 11A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior

FCA22N60N

Contextual Info: SupreMOSTM FCA22N60N tm N-Channel MOSFET 600V, 22A, 0.165Ω Features Description • RDS on = 0.140Ω ( Typ.)@ VGS = 10V, ID = 11A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior

FCI11N60

Contextual Info: TM FCI11N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and

11A 650V MOSFET

Abstract: FCB11N60
Contextual Info: TM FCB11N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and

FCI11N60

Contextual Info: SuperFET TM FCI11N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and

FCB11N60F

Abstract: FCB11N60FTM
Contextual Info: SuperFET FCB11N60F tm 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and