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    119N03MS Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG BSC119N03MSCGATMA1

    Power Field-Effect Transistor, 11A I(D), 30V, 0.0119ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    Rochester Electronics BSC119N03MSCGATMA1 160,000 1
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    119N03MS Datasheets Context Search

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    119N03MS

    Abstract: BSC119N03MSC 119n0 119N03
    Contextual Info: 119N03MSC G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS 30 V GS=10 V 11.9 V GS=4.5 V 13.9 ID • 100% Avalanche tested 39


    Original     		BSC119N03MSC IEC61249-2-21 119N03MS 119N03MS 119n0 119N03 PDF