118E3 Search Results
118E3 Price and Stock
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SiTime Corporation SIT8924BA-11-18E-33.333333MEMS OSC XO 33.333333MHZ LVCMOS |
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SIT8924BA-11-18E-33.333333 | 790 | 1 |
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SiTime Corporation SIT8008BI-11-18E-33.333333MEMS OSC XO 33.333333MHZ H/LV-CM |
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SIT8008BI-11-18E-33.333333 | 280 | 1 |
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SIT8008BI-11-18E-33.333333 | 10 Weeks | 1 |
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Vishay Beyschlag MAL219690118E3CAPACITOR 90F -20% +80% 8.4V T/H |
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MAL219690118E3 | Tray | 80 | 1 |
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SiTime Corporation SIT1602BI-11-18E-31.250000MEMS OSC XO 31.2500MHZ H/LV-CMOS |
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SIT1602BI-11-18E-31.250000 | 5 | 1 |
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SiTime Corporation SIT1602AI-71-18E-33.333330MEMS OSC XO 33.33333MHZ LVCMOS |
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SIT1602AI-71-18E-33.333330 | 3 | 1 |
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118E3 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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FET transistors with s-parametersContextual Info: H S iali ford M icro d ev ices Product Description SHF-0589 Stanford M icrodevices’ SHF-0589 series is a AI/GaAs/ GaAs Heterostructure FET housed in a low-cost surfacemount plastic package. HFET technology im proves breakdown voltage for high drain voltage operation. Its |
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SHF-0589 33dBm 600mA. SHF-0589 118E3J0QI 10BEL19I FET transistors with s-parameters |