118-136 MHZ Search Results

UMZ-1153-D16

Abstract: UMZ-1153
Contextual Info: CONFIDENTIAL MIN. Frequency, MHz 136 Power Output, dBm +7.0 TYP. MAX. 174 +9.0 +11.0 -25 -15 @ Offset = 1kHz -98 -93 @ Offset = 10kHz -123 -118 @ Offset = 100kHz -143 -138 @ Offset = 1MHz -163 -158 Pushing, MHz/V .3 .5 Pulling, MHz p-p, @12dBr, all phases

Contextual Info: MS1202 RF & MICROWAVE TRANSISTORS FM MOBILE APPLICATIONS • • • • • 175 MHz 12.5 VOLTS POUT = 7.0 W GP = 8.4 dB MINIMUM COMMON EMITTER CONFIGURATION The MS1202 is a epitaxial silicon NPN transistor designed for 12.5 volt class C applications in the 118 – 136 MHz frequency band and 28 volt FM

SD1219

Abstract: Transistor sd1219 ASI10733
Contextual Info: SD1219 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The SD1219 is Designed for 12.5 V Collector Modulated AM Class C Amplifier Service in the 118 to 136 MHz Avionics Communication Band. PACKAGE STYLE .380" 4L STUD .112x45° A C B FEATURES: E • PG = 8 dB Typical at 60 W/ 175 MHz

Contextual Info: MS1202 RF & MICROWAVE TRANSISTORS FM MOBILE APPLICATIONS Features • • • • • 175 MHz 12.5 VOLTS POUT = 7.0 W GP = 8.4 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1202 is a epitaxial silicon NPN transistor designed for 12.5 volt class C applications in the 118 – 136 MHz frequency band and 28 volt FM

MS1202

Abstract: max6535
Contextual Info: MS1202 RF & MICROWAVE TRANSISTORS FM MOBILE APPLICATIONS Features • • • • • 175 MHz 12.5 VOLTS POUT = 7.0 W GP = 8.4 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1202 is a epitaxial silicon NPN transistor designed for 12.5 volt class C applications in the 118 – 136 MHz frequency band and 28 volt FM

transistor 3l2

Abstract: 2N5994 Arco 403 118-136 mhz rca 381 transistor rca 632 RCA 431 transistor RCA Power Transistor 4 225
Contextual Info: File No. 453 RF Power Transistors Solid State Division 2N5994 15-W AM and 3 5 -W CW E m itter- Ballasted Overlay Transistor Silicon N-P-N Device fo r 12.5-V A M and 2 8 -V FM Am plifiers in V H F Communications Equipm ent Features: • In 12.5 V AM 118-136 MHz commercial aircraft

TB-157

Contextual Info: TB-157 Gain & Efficiency flatness;VDS=28Vdc, Idq=1.2A 32 100 30 90 28 Gain 26 80 Efficiency Pout fixed at 100W 24 70 22 60 20 18 50 118 120 122 124 126 128 130 132 134 136 138 140 Freq in MHz TB-157 Pin vs Pout F=118MHz; VDS=28Vdc, Idq=1.2A 120 33 100 31 Linear @40W

rf push pull mosfet power amplifier

Abstract: 100 watt hf mosfet 12 volt 150w amplifier RF VHF 139 144 mhz uhf 150w mosfet 150w amplifier RF VHF 139 - 144 mhz LDMOS 15w ldmos l2711 vhf LP801 LK602 LR941
Contextual Info: polyfet rf devices Broad Band RF Power MOSFET Transistors TB# 178 179 180 181 182 183D 184 185 186 187 188 189 191 192 193A 194 195 196 197 199 200NUM1 201 202 203 204 205 206 207 208 210 211 212 Freq Range 136-174 30-88 50-88 118-165 100-500 1.5-30 1.5-30

SH7709A

Abstract: MCS B21
Contextual Info: Pin Description 1.3.1 Pin Assignment 156 155 154 153 152 151 150 149 148 147 146 145 144 143 142 141 140 139 138 137 136 135 134 133 132 131 130 129 128 127 126 125 124 123 122 121 120 119 118 117 116 115 114 113 112 111 110 109 108 107 106 105 EXTAL XTAL

CK102

Abstract: BP240
Contextual Info: Pin Description 1.3.1 Pin Assignment 156 155 154 153 152 151 150 149 148 147 146 145 144 143 142 141 140 139 138 137 136 135 134 133 132 131 130 129 128 127 126 125 124 123 122 121 120 119 118 117 116 115 114 113 112 111 110 109 108 107 106 105 EXTAL XTAL

Contextual Info: 1.3 Pin Description 1.3.1 Pin Assignment 156 155 154 153 152 151 150 149 148 147 146 145 144 143 142 141 140 139 138 137 136 135 134 133 132 131 130 129 128 127 126 125 124 123 122 121 120 119 118 117 116 115 114 113 112 111 110 109 108 107 106 105 EXTAL XTAL

SH77

Abstract: MCS B21 AJ06 TBT 136 ag02
Contextual Info: 1.3 Pin Description 1.3.1 Pin Assignment 156 155 154 153 152 151 150 149 148 147 146 145 144 143 142 141 140 139 138 137 136 135 134 133 132 131 130 129 128 127 126 125 124 123 122 121 120 119 118 117 116 115 114 113 112 111 110 109 108 107 106 105 EXTAL XTAL

vk200 ferrite bead

Abstract: inductor vk200 FERROXCUBE VK200 vk200 VK200 INDUCTOR 093b 40977 SILVER-MICA VK-200-10 40975
Contextual Info: File No. 606 RF Power Transistors Solid State Division 40975 40976 40977 0 .0 5 - ,0 .5 - ,and 6-W , 118-136-M H z Silicon N -P -N O verlay Transistors 4Hr F o r H igh-Pow er V H F A m p lifie rs f Features: 40975 40976 40977 J E D E C T O -3 9 R C A H F -4 4

Contextual Info: Signal Sources High-Performance RF Signal Generators cont. • 10 kHz to 1280 MHz frequency range • <–147 dBc/Hz SSB phase noise at 10 kHz offset • 0.1 Hz frequency resolution • 100 kHz to 2560 MHz frequency range • AM/FM/⌽M/pulse in one generator

PMB7900V2.1-B

Contextual Info: MCRO series Voltage Controlled Oscillator with ceramic coaxial resonator BOWEI INTEGRATED CIRCUITS CO.,LTD. Features Ceramic coaxial resonator, Low phase noise l Two standard packages l Frequency 400~5000MHz l ROHS Compliant l Part number Frequency MHz Tuning

WJ-A28-2

Abstract: c 4977 transistor TRANSISTOR 13000 WJ-CA28
Contextual Info: WJ-A28-2 / SMA28-2 10 to 1500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT LOW NOISE: 3.5 dB TYP. HIGH EFFICIENCY: 27 mA (TYP.) @ 5 VDC GOOD DYNAMIC RANGE: 105 dB (TYP.) IN 1 MHz BW ♦ LOW VSWR: < 1.4:1 (TYP.) Outline Drawings

MVCO165

Contextual Info: MVCO 系列 集成表面贴装压控振荡器 博威集成电路有限公司 性能特点 l 国际标准封装12.7x12.7×4.0mm3 l 低电压工作+5V，+3V等可选 l 频率范围覆盖25～7200MHz l 绿色环保，满足ROHS标准 型号 频率范围 MHz

ADA-120/A

Abstract: 225 400 MHz transmitting antenna array antenna ADC-2100 CDA-900 printed dipole ADC-2100-A Antennas vhf DDA-900 SDA-122
Contextual Info: DIPOLE ANTENNAS PASSIVE PRINTED DIPOLES Printed dipole antennas and dipole antenna arrays are available for cellular band 890 - 960 MHz , PCN networks (1.7 to 2.3 GHz and other frequency bands) and other applications. Cellular base station antennas are available in

ALC 655

Abstract: ALC 665 ALC 887 MRF158 VK200
Contextual Info: Order this document by MRF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance

WJ-A28-2

Contextual Info: u u J A28-2 / SMA28-2 10 to 1500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT LOW NOISE: 3.5 dB TYP. HIGH EFFICIENCY: 27 mA (TYP.) @ 5 VDC GOOD DYNAMIC RANGE: 105 dB (TYP.) IN 1 MHz BW ♦ LOW VSWR: <1.4:1 (TYP.) Outline Drawings

940 629 MOTOROLA 220

Abstract: MOTOROLA POWER 726 MOS FET TRANSISTOR MRF158 VK200 20WATTS
Contextual Info: MOTOROLA Order this document by MRF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance

MOTOROLA POWER TRANSISTOR lc 945

Abstract: zener ap 474 940 629 MOTOROLA 113
Contextual Info: MOTOROLA O rder this docum ent by M RF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N-Channel Enhancement Mode D esigned fo r w id e b a n d la rg e -s ig n a l am p lifie r and o scilla to r ap plicatio ns to 500 MHz.

c5802

Abstract: c3207 C1162 C3150 C4106 C3206 c6067 C3205 c4137 c3271
Contextual Info: Technical Information Electronics Part Number Index Catalog Number page 4EPL1S . . 132 4EPL4S . . 132 4ERS1S . 133 4ERS4S . 133 05091 . 141

Wja66

Contextual Info: WJ-A66 / SMA66 10 to 1200 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN -TWO STAGES: 23.5 dB TYP. LOW NOISE: 4.0 dB (TYP.) HIGH OUTPUT LEVEL: +15 dBm (TYP.) ULTRA LOW PHASE DEVIATION FROM LINEARITY: < ±2°, 100 -1000 MHz