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    114N12N Search Results

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    Infineon Technologies AG IPP114N12N3GXKSA1

    MOSFET N-CH 120V 75A TO220-3
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    DigiKey IPP114N12N3GXKSA1 Tube 334 1
    • 1 $2.66
    • 10 $2.66
    • 100 $1.18
    • 1000 $0.88
    • 10000 $0.81
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    Avnet Americas IPP114N12N3GXKSA1 Tube 16 Weeks 500
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    • 1000 $0.72
    • 10000 $0.68
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    Newark IPP114N12N3GXKSA1 Bulk 384 1
    • 1 $2.96
    • 10 $2.69
    • 100 $2.22
    • 1000 $1.61
    • 10000 $1.47
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    Rochester Electronics IPP114N12N3GXKSA1 797 1
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    • 100 $1.10
    • 1000 $0.91
    • 10000 $0.81
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    TME IPP114N12N3GXKSA1 55 1
    • 1 $2.60
    • 10 $2.17
    • 100 $1.29
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    IBS Electronics IPP114N12N3GXKSA1 500
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    • 1000 $1.55
    • 10000 $1.53
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    Infineon Technologies AG IPP114N12N3 G

    MOSFETs N-Ch 120V 75A TO220-3 OptiMOS 3
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    Mouser Electronics IPP114N12N3 G 419
    • 1 $2.66
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    • 100 $1.16
    • 1000 $0.82
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    AVED Memory Products IPP114N12N3 G

    IPP114N12N3 G by INFINEON TECH ICS is a power MOSFET featuring low on-resistance, high-speed switching, and a maximum drain-source voltage of 120V, ideal for efficient power management applications.
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    IBS Electronics IPP114N12N3 G 254 150
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    114N12N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    114N12N

    Abstract: diode D83 IPP114N12N3 G IPP114N12N3 JESD22 PG-TO220-3 dd60
    Contextual Info: 114N12N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 120 V R DS(on)max 11.4 mΩ ID • Very low on-resistance R DS(on) 75 A • 175 °C operating temperature


    Original     		IPP114N12N3 PG-TO220-3 114N12N 114N12N diode D83 IPP114N12N3 G JESD22 PG-TO220-3 dd60 PDF

    Contextual Info: 114N12N3 G OptiMOSTM3 Power-Transistor Features Product Summary • N-channel, normal level VDS 120 V • Excellent gate charge x R DS on product (FOM) RDS(on)max 11.4 mΩ 75 ID • Very low on-resistance R DS(on) A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant; halogen free


    Original     		IPP114N12N3 PG-TO220-3 114N12N PDF

    Contextual Info: 114N12N3 G OptiMOSTM3 Power-Transistor Features Product Summary • N-channel, normal level VDS 120 V RDS on max 11.4 mΩ • Excellent gate charge x R DS(on) product (FOM) 75 ID • Very low on-resistance R DS(on) A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant; halogen free


    Original     		IPP114N12N3 PG-TO220-3 114N12N PDF