1130G Search Results

diode D83

Abstract: D83 - 004 d83 004 diode D83 004 D22 diode marking code r63400 D51X d95-3000 D93G D75-1100
Contextual Info: T W L À M I N A S J EN ISO 9001:2000 v^Z ertifik a t: 75 .1 0 0 .6 7 3 TUV Rheinland InterCert SEMICONDUCTOR POWER DEVICES DIODES , €UROPRODUKT 2004 Marking D61D - 250 - 22 - N O -Œ D -D special requirements and selections code external leads code base code for stud types letter sign

Contextual Info: Advance information •■ I l AS4LC2M8S0 AS4LC1M1ÓS0 A 3.3V 2 M x 8 /lM x 16 CMOS synchronous DRAM Features Automatic and direct precharge Burst read, single write Can assert random column address in every cycle LVl'l'L compatible V O 3.3Vpower supply JEDEC standard package, pinout and function

Contextual Info: 8 Pin 5 Tap High Speed CMOS HCT Compatible Active Delay Lines Delays are ±5% or ±2 nS Tap Total 12* 12* 12* 12* 12* 12* 12* 15 * t 22 24 26 28 30 32 36 45 17 18 19 20 21 22 24 30 27 30 33 36 39 42 48 60 DIP Part Number 32 36 40 44 48 52 60 75 SMD Part

125UR3S0700B

Contextual Info: Date:- 18 Mar, 2005 Data Sheet Issue:- 1 Ultra Rapid Semiconductor Protection Fuse European Square Body Type French Standard End Contact Voltage Rating 650V to 1250V Current Rating 63A to 1800A aR Characteristics Sizes 0, 1, 2, 3 Key Features: ™ Extremely high interrupting rating fuses for the protection of power semiconductors in accordance with

mw 137 600g

Abstract: transistor 5cw 069UR1S0250B bs88-4 070US3U1400B 110UR2S0800B transistor 6cw 069UR1S0350B transistor 5cw 61 IXYS CATALOGUE
Contextual Info: ULTRA RAPID SEMICONDUCTOR PROTECTION FUSES ULTRA RAPID SEMICONDUCTOR PROTECTION FUSES WESTCODE CATALOGUE Westcode Semiconductors Ltd Issue 6 – March 2005 ULTRA RAPID SEMICONDUCTOR PROTECTION FUSES Contents 1. Introduction 2 2. Applications & Definitions

Contextual Info: 8 Pin 5 Tap High Speed CMOS HCT Compatible Active Delay Lines Delays are ±5% or ±2 n S f Tap Total 12* 12* 12* 12* 12* 12* 12* 15 17 18 19 20 21 22 24 30 22 24 26 28 30 32 36 45 f W hichever is greater. * 32 36 40 44 48 ! 52 ! 60 75 27 30 33 36 39 42 48

Contextual Info: Advance information •■ I l AS4LC2M8S0 AS4LC1M1ÓS0 A 3.3V 2 M x 8 /lM x 16 CMOS synchronous DRAM Features Automatic and direct precharge Burst read, single write Can assert random column address in every cycle LVl'l'L compatible V O 3.3Vpower supply JEDEC standard package, pinout and function