110 BLOCK PIN ASSIGNMENT Search Results

A7 marking

Abstract: MT28F400B1
Contextual Info: 256K x 16, 512K x 8 BOOT BLOCK FLASH MEMORY MT28F400B1 FLASH MEMORY SMARTVOLTAGE FEATURES PIN ASSIGNMENT Top View 44-Pin SOP (FA-1) • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks • SmartVoltage Technology (SVT):

Contextual Info: OBSOLETE 256K x 16, 512K x 8 BOOT BLOCK FLASH MEMORY MT28F400B1 FLASH MEMORY SMARTVOLTAGE FEATURES PIN ASSIGNMENT Top View • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks • SmartVoltage Technology (SVT):

Contextual Info: 256K x 16, 512K x 8 BOOT BLOCK FLASH MEMORY MT28F400B1 FLASH MEMORY SMARTVOLTAGE FEATURES PIN ASSIGNMENT Top View • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks • SmartVoltage Technology (SVT):

Contextual Info: 128K x 16, 256K x 8 BOOT BLOCK FLASH MEMORY MT28F200B1 FLASH MEMORY SMARTVOLTAGE FEATURES PIN ASSIGNMENT Top View • Five erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Two main memory blocks • SmartVoltage Technology (SVT):

MT28F400B1

Contextual Info: *V K p i i c z R a f s j v O O i B!. i ' * f FLASH MEMORY m a r tV o lt a g e PIN ASSIGNMENT Top View 44-Pln SOP » Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB /4K-word param eter blocks Four main memory blocks • SmartVoltage Technology (SVT):

Contextual Info: OBSOLETE PRELIMINARY 1 MEG x 8 BOOT BLOCK FLASH MEMORY MT28F008B1 FLASH MEMORY SMARTVOLTAGE FEATURES PIN ASSIGNMENT Top View • Eleven erase blocks: 16KB boot block (protected) Two 8KB parameter blocks Eight main memory blocks • SmartVoltage Technology (SVT):

upd 1987

Contextual Info: t.fc MT28F200B1 FLASH MEMORY m artV o lt a g e FEATURES PIN ASSIGNMENT Top View • Five erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word param eter blocks Two main memory blocks • SmartVoltage Technology (SVT): 3.3V +0.3V o r 5V ±10% Vcc

MT28F200B1

Abstract: MT28F200B1SG
Contextual Info: PRELIMINARY P -n iC R C D f\J MT28F200B1 128K x 16. 256K x 8 FLASH M EM ORY 128K x 16, 256K x 8 FLASH MEMORY FEATURES BOOT BLOCK PIN ASSIGNMENT Top View • Five erase blocks: 1 6 K B / 8 K - w o r d b o o t b lo c k (p r o te c te d ) 44-Pin SOP Tw o 8K B/4K -w ord param eter blocks

Contextual Info: OBSOLETE 512K x 8 BOOT BLOCK FLASH MEMORY MT28F004B1 FLASH MEMORY SMARTVOLTAGE FEATURES PIN ASSIGNMENT Top View • Seven erase blocks: 16KB boot block (protected) Two 8KB parameter blocks Four main memory blocks • SmartVoltage Technology (SVT): 3.3V ±0.3V or 5V ±10% VCC

Contextual Info: 512K x 8 BOOT BLOCK FLASH MEMORY MT28F004B1 FLASH MEMORY SMARTVOLTAGE FEATURES PIN ASSIGNMENT Top View • Seven erase blocks: 16KB boot block (protected) Two 8KB parameter blocks Four main memory blocks • SmartVoltage Technology (SVT): 3.3V ±0.3V or 5V ±10% VCC

MT28F002

Abstract: MT28F002B1B MT28F002B1VG-8T MT28F002B1 8 T
Contextual Info: 256K x 8 BOOT BLOCK FLASH MEMORY MT28F002B1 FLASH MEMORY SMARTVOLTAGE FEATURES PIN ASSIGNMENT Top View • Five erase blocks: 16KB boot block (protected) Two 8KB parameter blocks Two main memory blocks • SmartVoltage Technology (SVT): 3.3V ±0.3V or 5V ±10% VCC

NOR Flash 1996 protect

Contextual Info: PRELIM IN ARY MT28F002B1 256K x 8 FLASH M EM ORY I^ IC R D N FLASH MEMORY 256K x 8 FEATURES PIN ASSIGNMENT Top View • Five erase blocks: 16KB boot block (protected) Two 8KB parameter blocks Two main memory blocks • Deep Power-Down Mode: 8|iA at 5V Vcc; 8|a.A at

Contextual Info: PRELIMINARY MT28F200B1 128K x 16, 256K x 8 FLASH MEMORY FLASH MEMORY 128K x 16, 256K x 8 S mart V o lta g e , FEATURES PIN ASSIGNMENT Top View • Five erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Two main memory blocks

Contextual Info: IU III— g n i v r I 128K x 16, 256K x 8 BOOT BLOCK FLASH MEMORY FLASH MEMORY S m ar tV oltag e FEATURES PIN ASSIGNMENT Top View • Five erase blocks: 16K B /8K -w ord boot block (protected) Tw o 8K B /4K -w ord param eter blocks Tw o m ain m em ory blocks

Contextual Info: FLASH MEMORY MT28F004B1 mart V o lta g e FEATURES PIN ASSIGNMENT Top View • Seven erase blocks: 16KB boot block (protected) Two 8KB parameter blocks Four main memory blocks • SmartVoltage Technology (SVT): 3.3V ±0.3V or 5V ±10% Vcc 5V ±10% or 12V ±5% Vpp

Contextual Info: PRELIMINARY ! M EG W IIC R O N due.}' FLASH MEMORY di.O i K K .A S H x 8 M E M O R Y MT28F008B1 FEATURES PIN ASSIGNMENT (Top View • Eleven erase blocks: 16KB boot block (protected) Two 8KB parameter blocks Eight main memory blocks • SmartVoltage Technology (SVT):

Contextual Info: PRELIMINARY MT28F004B1 512K x 8 FLASH MEMORY FLASH MEMORY 512K x 8 SMARTVOLTAGE, BOOT BLOCK FEATURES PIN ASSIGNMENT Top View • Seven erase blocks: 16KB boot block (protected) Two 8KB parameter blocks Four main memory blocks • Deep Power-Down Mode: 8µA at 5V VCC; 8µA at

Contextual Info: PRELIMINARY MT28F004B1 512K x 8 FLASH MEMORY MICRON U QUANTUM DEVICES, INC. FLASH MEMORY 512K x 8 S m a r tV o lta g e , BOOT BLOCK FEATURES PIN ASSIGNMENT Top View • Seven erase blocks: 16KB boot block (protected) Two 8KB parameter blocks Four main memory blocks

Contextual Info: •56K x 8 • •1fc ivi O R Y MT28F002B1 FLASH MEMORY FEATURES PIN ASSIGNMENT Top View • Five erase blocks: 16KB boot block (protected) Two 8KB param eter blocks Tw o m ain memory blocks • Sm artVoltage Technology (SVT): 3.3V ±0.3V or 5V ±10% V cc

MT28F400B1

Abstract: MAX714
Contextual Info: PRELIMINARY MT28F004B1/MT28F400B1 ET 4 MEG FLASH MEMORY I^ IIC R O N FLASH MEMORY 4 MEG EXTENDED TEMPERATURE FEATURES PIN ASSIGNMENT Top View • Extended tem perature range operation: -40° to +85° C • Seven erase blocks: 16KB/8K-word boot block (protected)

Contextual Info: PRELIMINARY MICRON I 512Kx 16,1 MEG x 8 BOOT BLOCK FLASH MEMORY QUANTUM DEVICES, INC. FLASH MEMORY MT28F8o°B1 S m artV FEATURES PIN ASSIGNMENT Top View 44-Pin SOP (FA-1) • Eleven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word param eter blocks

Contextual Info: PRELIMINARY‡ 128Mb, 64Mb, 32Mb Q-FLASH MEMORY Q-FLASHTM MEMORY MT28F128J3, MT28F640J3, MT28F320J3 FEATURES PIN /BALL ASSIGNMENT Top View • x8/x16 organization • One hundred twenty-eight 128KB erase blocks (128Mb) Sixty-four 128KB erase blocks (64Mb)

micron flash controller

Abstract: 03BCD Micron Q-Flash memory
Contextual Info: PRELIMINARY‡ 128Mb, 64Mb, 32Mb Q-FLASH MEMORY Q-FLASHTM MEMORY MT28F128J3, MT28F640J3, MT28F320J3 FEATURES PIN /BALL ASSIGNMENT Top View • x8/x16 organization • One hundred twenty-eight 128KB erase blocks (128Mb) Sixty-four 128KB erase blocks (64Mb)

MT28F400B1

Abstract: MAX714
Contextual Info: PRELIMINARY |M |^ E S m V I MT28F004B1/MT28F400B1 ET 4 MEG FLASH MEMORY I FLASH MEMORY 4 MEG S m artV o ltag e, BOOT BLOCK, EXTENDED TEMPERATURE FEATURES PIN ASSIGNMENT Top View • Extended temperature range operation: -40° to +85° C • Seven erase blocks: