10V DRIVE NCH MOSFET Search Results

Contextual Info: MITSUBISHI Nch POWER MOSFET Î FS5AS-06 | HIGH-SPEED SWITCHING USE FS5AS-06 • 10V DRIVE • VDSS . 60V • rDS ON (MAX) .0 .1 6i2

Contextual Info: MITSUBISHI Nch POWER MOSFET | FS10KM-2 | HIGH-SPEED SWITCHING USE FS10KM-2 OUTLINE DRAWING Dimensions in mm • 10V DRIVE • VDSS . • TDS ON (MAX) .

fs70sm-03

Contextual Info: MITSUBISHI Nch POWER MOSFET j FS70SM-03 | HIGH-SPEED SWITCHING USE FS70SM-03 • 10V DRIVE • VDSS . 30V • rDS ON (MAX) .14mi2 • ID . 70A

P 838 X MOSFET

Contextual Info: MITSUBISHI Nch POWER MOSFET ! FS30UM-06 I % HIGH-SPEED SWITCHING USE FS30UM-06 • 10V DRIVE • VDSS . 60V • rDS ON (MAX) .30mQ • I D . 30A

30414

Contextual Info: Ordering number : ENA2289 FW276 N-Channel Power MOSFET 450V, 0.7A, 12.1Ω, Dual SOIC8 http://onsemi.com Features • On-resistance RDS on =9.3Ω(typ.) • Input capacitance Ciss=55pF(typ.) • 10V drive • Nch+Nch dual MOSFET • Halogen free compliance

C3EN

Abstract: FS30AS-2
Contextual Info: MITSUBISHI Nch POWER MOSFET FS30AS-2 HIGH-SPEED SWITCHING USE i FS30AS-2 • 10V DRIVE • VDSS .100V • ros ON (m a x ) . 10O m O

Contextual Info: MITSUBISHI Nch POWER MOSFET FS70KM-03 HIGH-SPEED SWITCHING USE FS70KM-03 OUTLINE DRAWING Dimensions in mm • 10V DRIVE • VDSS .30V • rDS ON (MAX) .14m i2

Contextual Info: MITSUBISHI Nch POWER MOSFET J FS30SM-03 HIGH-SPEED SWITCHING USE FS30SM-03 • 10V DRIVE • VDSS . 30V • TDS O N (M A X ) . 4 6 m £2

mitsubishi j 170

Contextual Info: MITSUBISHI Nch POWER MOSFET FS70VS-03 J HIGH-SPEED SWITCHING USE FS70VS-03 • 10V DRIVE • VDSS .30 V • r o s ON (M AX ) .1 4 m f l

Contextual Info: 10V Drive Nch MOSFET R6020ANJ zStructure Silicon N-channel MOSFET zDimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple.

Contextual Info: 10V Drive Nch MOSFET R6020ANJ zDimensions Unit : mm zStructure Silicon N-channel MOSFET LPTS 10.1 1.3 13.1 9.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple.

43ti

Contextual Info: MITSUBISHI Nch POWER MOSFET I | FS30KM-2 | s HIGH-SPEED SWITCHING USE FS30KM-2 OUTLINE DRAWING Dimensions in mm Í • 10V DRIVE • VDSS .100V • rDS ON (MAX) . 1 0 0m i2

Contextual Info: Data Sheet 10V Drive Nch MOSFET R5019ANJ  Structure Silicon N-channel MOSFET  Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA. 4) Drive circuits can be simple. 5) Parallel use is easy.

Contextual Info: Data Sheet 10V Drive Nch MOSFET R6018ANJ  Structure Silicon N-channel MOSFET  Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA. 4) Drive circuits can be simple. 5) Parallel use is easy.

Contextual Info: Data Sheet 10V Drive Nch MOSFET R5019ANJ  Structure Silicon N-channel MOSFET  Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA. 4) Drive circuits can be simple. 5) Parallel use is easy.

R6018ANJ

Contextual Info: Data Sheet 10V Drive Nch MOSFET R6018ANJ  Structure Silicon N-channel MOSFET  Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA. 4) Drive circuits can be simple. 5) Parallel use is easy.

250v 10A mosfet

Abstract: MOSFET 250V 10A
Contextual Info: MITSUBISHI Nch POWER MOSFET -sas— FS20UMA-5A soW HIGH-SPEED SWITCHING USE FS20UMA-5A OUTLINE DRAWING © Dimensions in mm o@© © GATE © DRAIN ©SOURCE © DRAIN • 10V DRIVE . 250V

Contextual Info: MITSUBISHI Nch POWER MOSFET -sas— FS10UMA-5A soW HIGH-SPEED SWITCHING USE FS10UMA-5A OUTLINE DRAWING © Dimensions in mm Q ©@ © GATE © DRAIN ©SOURCE © DRAIN • 10V DRIVE . 250V

Contextual Info: 10V Drive Nch MOSFET R6020ANJ Structure Silicon N-channel MOSFET Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy.

RL266

Contextual Info: RCD075N20 Data Sheet 10V Drive Nch MOSFET RCD075N20  Structure Silicon N-channel MOSFET  Dimensions Unit : mm CPT3 6.5 5.1 2.3 0.5 0.9 1.5 5.5 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide range of SOA. 4) Drive circuits can be simple.

Contextual Info: R6018ANJ Data Sheet 10V Drive Nch MOSFET R6018ANJ  Structure Silicon N-channel MOSFET  Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA. 4) Drive circuits can be simple. 5) Parallel use is easy.

FS12KMA4A

Contextual Info: MITSUBISHI Nch POWER MOSFET ^ FS12KMA-4A soW HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 2.8 ± 0 .2 • 10V DRIVE . 200V • V • rDS ON (M A X ) .

Contextual Info: RCD050N20 Data Sheet 10V Drive Nch MOSFET RCD050N20  Structure Silicon N-channel MOSFET  Dimensions Unit : mm CPT3 6.5 5.1 2.3 0.5 0.9 1.5 5.5 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide range of SOA. 4) Drive circuits can be simple.

RCD-100

Abstract: RCD100N
Contextual Info: RCD100N20 Data Sheet 10V Drive Nch MOSFET RCD100N20  Structure Silicon N-channel MOSFET  Dimensions Unit : mm CPT3 6.5 5.1 2.3 0.5 0.9 1.5 5.5 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide range of SOA. 4) Drive circuits can be simple.