10N60 Search Results
10N60 Datasheets (12)
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| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 10N60 | Unisonic Technologies | 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET | Original | 233.92KB | 9 | ||
| 10N60-A-TA3-T | Unisonic Technologies | 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET | Original | 233.92KB | 9 | ||
| 10N60-B-TA3-T | Unisonic Technologies | 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET | Original | 233.91KB | 9 | ||
| 10N60C5M | IXYS | CoolMOS Power MOSFET | Original | 102.64KB | 4 | ||
| 10N60L-A-TA3-T | Unisonic Technologies | 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET | Original | 233.93KB | 9 | ||
10N60A
|
AK Semiconductor | 10A 600V N-channel enhancement mode MOSFET with low on-resistance of 0.75 ohm typical at VGS = 10V, available in TO-220F, TO-220C, and TO-263 packages, featuring high dv/dt capability and 100% avalanche tested performance. | Original | ||||
10N60B
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AK Semiconductor | 10A, 600V N-channel enhancement mode MOSFET with typical on-resistance of 0.6 ohms at VGS = 10V, available in TO-220C, TO-220F, and TO-263 packages, featuring low gate charge and high dv/dt capability. | Original | ||||
JMPC10N60BJ
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Jiangsu JieJie Microelectronics Co Ltd | 600V, 10A N-channel enhancement mode power MOSFET in TO-220C-3L package with RDS(ON) less than 0.9 ohm at VGS = 10V, designed for load switching, PWM applications, and power management with fast switching and improved dv/dt capability. | Original | ||||
SLF10N60C
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Maplesemi | 10A, 600V N-channel MOSFET with typ. RDS(on) of 0.62 ohm at VGS = 10V, low gate charge of 36.5nC, high ruggedness, fast switching, 100% avalanche tested, suitable for high-efficiency power supplies and active PFC applications. | Original | ||||
JMPF10N60BJ
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Jiangsu JieJie Microelectronics Co Ltd | 600V, 10A N-channel Enhancement Mode Power MOSFET in TO-220FP-3L package with RDS(ON) less than 0.90 ohm at VGS = 10V, designed for fast switching and power management applications. | Original | ||||
SLF10N60S
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Maplesemi | 600V N-Channel MOSFET with 10A continuous drain current, 0.75Ω typical RDS(on) at VGS = 10V, low gate charge of 28.3nC, and 100% avalanche tested for high reliability in switching applications. | Original | ||||
MDD10N60F
|
Microdiode Semiconductor (MDD) | Power Field-Effect Transistor | Original |
10N60 Price and Stock
onsemi
onsemi NGTB10N60R2DT4GIGBT, 600V, 10A, N-Channel - Tape and Reel (Alt: NGTB10N60R2DT4G) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NGTB10N60R2DT4G | Tape & Reel | 2,500 |
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NGTB10N60R2DT4G | 585,000 |
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onsemi FDPF10N60NZPower MOSFET, N-Channel, UniFETTM II, 600 V, 10 A, 750 mO, TO-220F - Rail/Tube (Alt: FDPF10N60NZ) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDPF10N60NZ | Tube | 3,000 |
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FDPF10N60NZ | 250 | 1 |
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FDPF10N60NZ | 8,828 | 1 |
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FDPF10N60NZ | 17,728 |
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FDPF10N60NZ | 883 | 1 |
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onsemi SGP10N60RUFDTUIGBT, 600V, 10A, Short Circuit Rated - Rail/Tube (Alt: SGP10N60RUFDTU) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SGP10N60RUFDTU | Tube | 1,000 |
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SGP10N60RUFDTU | 17,000 |
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onsemi FDBL0110N60N-Channel PowerTrench? MOSFET, 60V, 300A, 1.1mO - Tape and Reel (Alt: FDBL0110N60) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDBL0110N60 | Tape & Reel | 2,000 |
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| FDBL0110N60 | Tape & Reel | 69 Weeks | 2,000 |
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FDBL0110N60 | Cut Tape | 3,244 | 1 |
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| FDBL0110N60 | Tape & Reel | 3,244 | 100 |
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FDBL0110N60 | 2,287 | 1 |
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FDBL0110N60 | 2,000 |
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FDBL0110N60 | 99 Weeks | 2,000 |
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FDBL0110N60 | 53 Weeks | 2,000 |
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FDBL0110N60 | 50 Weeks | 2,000 |
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FDBL0110N60 | 6,000 |
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onsemi FGP10N60UNDF- Rail/Tube (Alt: FGP10N60UNDF) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FGP10N60UNDF | Tube | 1,600 |
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FGP10N60UNDF | 64,575 | 1 |
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FGP10N60UNDF | 6,800 |
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