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10N60
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Unisonic Technologies
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10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET |
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233.92KB |
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10N60-A-TA3-T
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Unisonic Technologies
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10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET |
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233.92KB |
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10N60-B-TA3-T
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Unisonic Technologies
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10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET |
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233.91KB |
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10N60C5M
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IXYS
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CoolMOS Power MOSFET |
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102.64KB |
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10N60L-A-TA3-T
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Unisonic Technologies
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10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET |
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233.93KB |
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10N60B
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AK Semiconductor
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10A, 600V N-channel enhancement mode MOSFET with typical on-resistance of 0.6 ohms at VGS = 10V, available in TO-220C, TO-220F, and TO-263 packages, featuring low gate charge and high dv/dt capability. |
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10N60A
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AK Semiconductor
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10A 600V N-channel enhancement mode MOSFET with low on-resistance of 0.75 ohm typical at VGS = 10V, available in TO-220F, TO-220C, and TO-263 packages, featuring high dv/dt capability and 100% avalanche tested performance. |
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JMPF10N60BJ
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Jiangsu JieJie Microelectronics Co Ltd
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600V, 10A N-channel Enhancement Mode Power MOSFET in TO-220FP-3L package with RDS(ON) less than 0.90 ohm at VGS = 10V, designed for fast switching and power management applications. |
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JMPC10N60BJ
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Jiangsu JieJie Microelectronics Co Ltd
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600V, 10A N-channel enhancement mode power MOSFET in TO-220C-3L package with RDS(ON) less than 0.9 ohm at VGS = 10V, designed for load switching, PWM applications, and power management with fast switching and improved dv/dt capability. |
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SLF10N60C
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Maplesemi
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10A, 600V N-channel MOSFET with typ. RDS(on) of 0.62 ohm at VGS = 10V, low gate charge of 36.5nC, high ruggedness, fast switching, 100% avalanche tested, suitable for high-efficiency power supplies and active PFC applications. |
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SLF10N60S
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Maplesemi
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600V N-Channel MOSFET with 10A continuous drain current, 0.75Ω typical RDS(on) at VGS = 10V, low gate charge of 28.3nC, and 100% avalanche tested for high reliability in switching applications. |
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MDD10N60F
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Microdiode Semiconductor
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600V N-Channel Enhancement Mode MOSFET, VDS 600V, ID(Tc=25°C) 10A, RDS(on),max 0.9Ω@VGS=10V, Qg,typ 31.4nC, TO-220F-3L. |
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