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    10N60; Search Results

    10N60; Datasheets (12)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    10N60
    Unisonic Technologies 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET Original PDF 233.92KB 9
    10N60-A-TA3-T
    Unisonic Technologies 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET Original PDF 233.92KB 9
    10N60-B-TA3-T
    Unisonic Technologies 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET Original PDF 233.91KB 9
    10N60C5M
    IXYS CoolMOS Power MOSFET Original PDF 102.64KB 4
    10N60L-A-TA3-T
    Unisonic Technologies 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET Original PDF 233.93KB 9
    badge 10N60A
    AK Semiconductor 10A 600V N-channel enhancement mode MOSFET with low on-resistance of 0.75 ohm typical at VGS = 10V, available in TO-220F, TO-220C, and TO-263 packages, featuring high dv/dt capability and 100% avalanche tested performance. Original PDF
    badge 10N60B
    AK Semiconductor 10A, 600V N-channel enhancement mode MOSFET with typical on-resistance of 0.6 ohms at VGS = 10V, available in TO-220C, TO-220F, and TO-263 packages, featuring low gate charge and high dv/dt capability. Original PDF
    badge JMPC10N60BJ
    Jiangsu JieJie Microelectronics Co Ltd 600V, 10A N-channel enhancement mode power MOSFET in TO-220C-3L package with RDS(ON) less than 0.9 ohm at VGS = 10V, designed for load switching, PWM applications, and power management with fast switching and improved dv/dt capability. Original PDF
    badge SLF10N60C
    Maplesemi 10A, 600V N-channel MOSFET with typ. RDS(on) of 0.62 ohm at VGS = 10V, low gate charge of 36.5nC, high ruggedness, fast switching, 100% avalanche tested, suitable for high-efficiency power supplies and active PFC applications. Original PDF
    badge JMPF10N60BJ
    Jiangsu JieJie Microelectronics Co Ltd 600V, 10A N-channel Enhancement Mode Power MOSFET in TO-220FP-3L package with RDS(ON) less than 0.90 ohm at VGS = 10V, designed for fast switching and power management applications. Original PDF
    badge SLF10N60S
    Maplesemi 600V N-Channel MOSFET with 10A continuous drain current, 0.75Ω typical RDS(on) at VGS = 10V, low gate charge of 28.3nC, and 100% avalanche tested for high reliability in switching applications. Original PDF
    badge MDD10N60F
    Microdiode Semiconductor (MDD) Power Field-Effect Transistor Original PDF
    SF Impression Pixel

    10N60; Price and Stock

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    FLIP ELECTRONICS NGTB10N60R2DT4G

    IGBT 600V 20A DPAK
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    DigiKey NGTB10N60R2DT4G Tape & Reel 585,000 2,500
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    Rochester Electronics LLC NDF10N60ZH

    MOSFET N-CH 600V 10A TO220FP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NDF10N60ZH Tube 197,464 371
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    Vishay Intertechnologies SIHJ10N60E-T1-GE3

    MOSFET N-CH 600V 10A PPAK SO-8
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    DigiKey () SIHJ10N60E-T1-GE3 Tape & Reel 11,913 3,000
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    SIHJ10N60E-T1-GE3 Digi-Reel 11,913 1
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    Avnet Americas SIHJ10N60E-T1-GE3 Tape & Reel 28 Weeks 3,000
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    TTI SIHJ10N60E-T1-GE3 Reel 6,000 3,000
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    EBV Elektronik SIHJ10N60E-T1-GE3 39 Weeks 3,000
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    Wuhan P&S SIHJ10N60E-T1-GE3 12,000 1
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    • 10 $13.26
    • 100 $4.42
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    Infineon Technologies AG IKD10N60RC2ATMA1

    IGBT TRENCH FS 600V 18.8A TO252
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    DigiKey () IKD10N60RC2ATMA1 Digi-Reel 7,384 1
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    IKD10N60RC2ATMA1 Cut Tape 7,384 1
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    IKD10N60RC2ATMA1 Tape & Reel 7,384 2,500
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    Avnet Americas IKD10N60RC2ATMA1 Tape & Reel 30 Weeks 2,500
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    Mouser Electronics IKD10N60RC2ATMA1 4,950
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    Newark () IKD10N60RC2ATMA1 Tape & Reel 680 100
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    IKD10N60RC2ATMA1 Cut Tape 680 1
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    Rutronik IKD10N60RC2ATMA1 Tape & Reel 100 1
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    EBV Elektronik IKD10N60RC2ATMA1 31 Weeks 2,500
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    Infineon Technologies AG IGB10N60TATMA1

    IGBT NPT FS 600V 20A TO263-3-2
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    DigiKey () IGB10N60TATMA1 Digi-Reel 3,134 1
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    Avnet Americas IGB10N60TATMA1 Tape & Reel 40 Weeks 1,000
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    Mouser Electronics IGB10N60TATMA1 2,970
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    EBV Elektronik IGB10N60TATMA1 41 Weeks 1,000
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