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10N10
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Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
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33.22KB |
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10N12
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Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
PDF
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33.22KB |
1 |
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10N12
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Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
PDF
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33.22KB |
1 |
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10N12L
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Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
PDF
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33.22KB |
1 |
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10N12L
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Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
PDF
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33.22KB |
1 |
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10N15
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Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
PDF
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33.22KB |
1 |
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10N15
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Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
PDF
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33.22KB |
1 |
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10N15L
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Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
PDF
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33.22KB |
1 |
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10N15L
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Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
PDF
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33.22KB |
1 |
AKP10N12
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AK Semiconductor
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N-Channel Super Trench II Power MOSFET AKP10N12 with 120V VDS, 70A ID, 8.5mΩ RDS(ON) at VGS=10V, suitable for high-frequency switching and synchronous rectification applications. |
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SL10N10A
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SLKOR
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Trench Power MV MOSFET technology, SOT-223 package, VDS 100V, RDS(ON)@10V,MAX 95mΩ, ID 10A, VGS ±20V, TJ 150°C, TSTG -50 to 155°C, ID Tc=25°C 10A. |
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HM10N10K
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VBsemi Electronics Co Ltd
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N-Channel 100 V MOSFET with 175 °C junction temperature, RDS(on) 0.140 Ω at VGS = 10 V, continuous drain current up to 13 A, available in TO-252 package, suitable for PWM and primary side switch applications. |
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JMTI10N10A
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Jiangsu JieJie Microelectronics Co Ltd
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N-channel enhancement mode power MOSFET with 100V drain-source voltage, 10A continuous drain current, and RDS(on) less than 110mΩ at VGS=10V, housed in a TO-251-3L package. |
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AKP10N12D
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AK Semiconductor
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N-Channel Super Trench II Power MOSFET AKP10N12 D with 120V drain-source voltage, 70A continuous drain current, 8.5mΩ typical RDS(ON) at VGS=10V, suitable for high-frequency switching and synchronous rectification applications. |
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SLP_D10N10T
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Maplesemi
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N-Channel MOSFET with 100V drain-source voltage, 10A continuous drain current, 105mΩ typical RDS(on) at VGS = 10V, and low gate charge, suitable for power management and switching applications. |
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AKP10N12K
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AK Semiconductor
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N-Channel Super Trench II Power MOSFET AKP10N12K with 120V VDS, 65A ID, 8.7mΩ RDS(on) at VGS=10V, low gate charge, suitable for high-frequency switching and synchronous rectification applications. |
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CJU10N10
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JCET Group
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N-Channel Power MOSFET CJU10N10 with 100V drain-source voltage, 9.6A continuous drain current, 0.115Ω typical on-resistance at 10V gate voltage, low gate charge, and fast switching capability in a TO-252-2L package. |
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JMTK10N10A
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Jiangsu JieJie Microelectronics Co Ltd
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100V, 10A N-channel enhancement mode power MOSFET in TO-252-3L package with RDS(on) less than 108 mΩ at VGS = 10V, featuring advanced trench technology for low gate charge and high efficiency. |
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HSM10N15A
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Huashuo Semiconductor
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N-channel 150V, 10A MOSFET with 35 mΩ typical RDS(ON), low gate charge, and high cell density trench technology for efficient fast switching in power applications. |
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AKP10N12
