10MS1 Search Results

M2FH3

Contextual Info: s /3 '.v h + - a " u y y- Schottky Barrier Diode Single Diode Surface Mount M2FH3 30V 6A > /J'§kSM D > H ffiV F= 0 .3 6 V ID C /D C nyjK-2 nvny RATINGS Absolute Maximum Ratings isÊ » & ^i|rêa E -f- a Storage Temperature Operating Junction Temperature

d10sc9m

Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE D10SC9M 90 V 10 A Feature • Tj=150t: • Tj=150°C • P rrsm 'F lîr jy î s x fô M . • P r r s m Rating • Full Molded Main Use • D C /D C D y J t— P • O A ftS • Switching Regulator • DC/DC Converter

Contextual Info: Super Fast Recovery Diode Diode Module mtm D200LC40B OUTLINE 400V 200A Feature •*a a u m • H igh lo R ating • trr=150ns • trr= 150ns • Isolation ty p e Main Use • S e m ic o n d u c to r P roce ss M a c h in e • H igh p o w e r source • FA

ADC8S-12

Contextual Info: Fast Complete 12-Bit A/D Converters ANALOG DEVICES □ AD ADC84/AD ADC85/AD5240 FEATURES FU N CTIONAL BLOCK DIAGRAM Performance Complete 12-Bit A /D Converter with Reference and Clock Fast Successive Approximation Conversion: 10/us or 5fa Buried Zener Reference for Long Term Stability and Low

Contextual Info: TO SHIBA TENTATIVE SG3000GXH25 TOSHIBA GATE TURN-OFF THYRISTOR SG3000GXH25 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage : V d rm = 4500V Note 1 Repetitive Peak Reverse Voltage : V r r m = 4000V R.M.S On-State Current : IT(RMS) = 800A

sg3000gx

Contextual Info: TOSHIBA TENTATIVE SG3000GXH25 TOSHIBA GATE TURN-OFF THYRISTOR SG3000GXH25 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage R.M.S On-State Current Peak Turn-Off Current Critical Rate of Rise of On-State Current

D2L DIODE

Abstract: 2L20U D2L20U AX078
Contextual Info: Super Fast Recovery Diode Axial Diode O U T L IN E D2L20U Unit : mm Weight 0.38g Typ Package I AX078 2 0 0 V 1.5A 2 ' 27.5 Feature • s v -r x • Low Noise • trr=35ns • tnr=35ns Main Use ñ |< R 0 * iütflJifiürtlîlllsl M arking • Fly Wheel D 2L 2 4

D200LC40B

Abstract: DIODE M4 marking J533 hk7 marking
Contextual Info: Super Fast Recovery Diode Diode Module • ¿ m il OUTLINE D200LC40B 400V 200A Feature • High lo Rating • trr=150ns • trr= 150ns • Isolation type •jests? Main Use • Semiconductor Process Machine • * 5 S !* 8 ! • High power source • FA • Factory Automation

schematic diagram 230VAC to 24VDC POWER SUPPLY

Abstract: 48V 30A SPDT RELAY IM03D PCH-124 N mosfet 250v 600A VARISTOR 275 L20 PA66 - GF 25 relay marking code W16 SMD Transistor 90W 19.5V Power Adapter pcb G6CU-2117P
Contextual Info: farnell.com element14.com 2501 Relays & Solenoids Page 8 & 11 Pin Plug-In Power Relays. . . . . . . . . . . . . Automotive Relays . . . . . . . . . . . . . . . . . . . . . . . . . High Frequency Relays . . . . . . . . . . . . . . . . . . . . . Interface Relays . . . . . . . . . . . . . . . . . . . . . . . . . . .

FtZ MARKING CODE

Abstract: D25SC6M D25SC6MR
Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE D25SC6MR Unit :m m P a c k a g e : IT O -3 P W eight 4.3k T y p 15 60V 25A 5.5 n-yt-m XW ) D a te code Feature • Tj=i5(rc • Tj=150°C • P r r s m P K t? • P rrsm R ating • ttU K S B • High lo Rating • 7 J I Æ - J L/K

4500v

Abstract: SG3000GXH23G SG3000GXH29
Contextual Info: TOSHIBA TENTATIVE SG3000GXH23G TOSHIBA GATE TURN-OFF THYRISTOR SG3000GXH23G Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage VdRM = 4500V R.M.S On-State Current IT RMS = 1200A Peak Turn-Off Current ItGQM —3000A Critical Rate of Rise of On-State Current : di/dt = 400A/ jus

IRACO

Contextual Info: POWER MANAGEMENT SYSTEM DEVICE POWER MANAGEMENT SYSTEM DEVICE RC5T583Sx Product Specifications Rev. 1.0 June 11, 2012 RICOH COMPANY, LTD. Electronic Devices Company This specification is subject to change without notice. 2011-2012 Rev.1.0 Page 1 POWER MANAGEMENT SYSTEM DEVICE

G03H1202

Abstract: ic 5304 1a 1200v 3A ic 5304 IGA03N120H2 IKP03N120H2 PG-TO220-3-31
Contextual Info: IGA03N120H2 HighSpeed 2-Technology C • Designed for: - TV – Horizontal Line Deflection • 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability

k30t60

Abstract: IKW30N60T k30t6 Q67040-S4717 K-30-T IGBT IKW30N60T
Contextual Info: IKW30N60T q TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C

UTM ceramic RESISTOR 212-3

Abstract: AD2033 rs 380sh NyQuist 3 axis DAX 3S OP27GN IC BD 540 LYS HTC Desire 816 Dual SIM HTC A5 12SmV cmos cookbook Monsanto 7 segment displays
Contextual Info: General Information ANALOG DEVICES DATA-ACQUISITION DATABOOK 1984 VOLUME I INTEGRATED CIRCUITS Table of Contents Ordering Guide Q Operational Amplifiers Instrumentation & Isolation Amplifiers c Analog Signal Processing Components m a Voltage References Temperature Measurement Components

Contextual Info: SIEMENS NPN Silicon RF Transistors BF 254 BF 255 • For AM and FM stages Type Marking Ordering Code BF 254 BF 255 - Q62702-F201 Q62702-F202 Pin Configuration 1 2 3 C E Package1 B TO-92 Maximum Ratings Parameter Symbol Collector-emitter voltage Collector-base voltage

D30L60

Contextual Info: Super Fast Recovery Diode Single Diode •¿m H D30L60 OUTLINE Unit : mm W eight 4.3« T yp P a c k a g e : IT O -3 P 5.5 15 600V 30A a -Æ H K W ) Date code N Feature • raiHŒ FRD • • • • • e y -fX • trr=150ns • yJlst-Jb F S3T High Voltage Super FRD

mau aui

Abstract: rxc 150 NATIONAL TP 41 WITH PIN CONFIGURATION DIAGRAM AM7990 LXT901 LXT907 MB86950 MB86960 MTD907 TMS380C26
Contextual Info: MYSON TECHNOLOGY MTD907 Ethernet Encoder/decoder and 10BaseT Transceiver with Built-in Waveform Shaper FEATURES • • • • • • • • • Pin-out and functionally compatible with Level One LXT907. Built-in UTP waveform shaping function - no external filters required.

9V DC INPUT

Contextual Info: H A R R IS X CA3440 Semiconductor î0ss^cU6Al January 1999 SS* \C W 63kHz, Nanopower, BiMOS Operational Amplifiers Description Features • High Input Resistance. 2Ti2 Typ The CA3440 is an integrated circuit operational amplifier that combines the advantages of MOS and bipolar transistors on

Contextual Info: TRENCHSTOP Series IHW40T60 q Low Loss DuoPack : IGBT in TRENCHSTOP™ technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features: • Very low VCE sat 1.5V (typ.)  Maximum junction temperature 175°C  Short circuit withstand time 5s

IkW30N60T

Contextual Info: TRENCHSTOP Series IKW30N60T q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features: • Very low VCE sat 1.5V (typ.)  Maximum Junction Temperature 175°C 

Contextual Info: For Immediate Assistance, Contact Your Local Salesperson B U R R -B R O W N ; E PGA202/203 1 Digitally Controlled Programmable-Gain INSTRUMENTATION AMPLIFIER FEATURES APPLICATIONS • DIGITALLY PROGRAMMABLE GAINS: DECADE MODEL— PGA202 GAINS O F 1 ,10,100,1000

Contextual Info: TOSHIBA SGR3500GXH29 TOSHIBA GATE TURN-OFF THYRISTOR LOWER LOSS, REVERSE CONDUCTING TYPE TENTATIVE SGR3500GXH29 INVERTER APPLICATION Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage R.M.S On-State Current R.M.S Reverse Current Peak Turn-Off Current

BF255

Abstract: IC 41 BF BF254 IS420 81-common Q62702-F201 Q62702-F202 marking code 41 BF TO92
Contextual Info: SIEMENS NPN Silicon RF Transistors BF 254 BF 255 • For AM and FM stages Type Marking Ordering Code BF 254 BF 255 - Q62702-F201 Q62702-F202 Pin Configural ion 1 2 3 C E Package1 B TO-92 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage