10A DIODE Search Results

gp10nc60k

Abstract: RG 2006 10A 600V JESD97 STGB10NC60K STGB10NC60KT4 STGD10NC60K STGP10NC60K
Contextual Info: STGB10NC60K - STGD10NC60K STGP10NC60K N-channel 600V - 10A - D2PAK / TO-220 / DPAK Short circuit rated PowerMESH IGBT General features Type VCES VCE sat Max @25°C IC @100°C STGB10NC60K STGP10NC60K STGD10NC60K 600V 600V 600v <2.5V <2.5V <2.5V 10A 10A 10A

CMX60D10

Abstract: CMXE100D6 CMXE200D3 CMXE60D20 CMX100D10 CMX100D6 CMX200D3 CMX60D20 CMX60D5 CMXE100D10
Contextual Info: CMX Series • SIP SSR • Ratings to 20A @ 60 VDC, 10A @ 100 VDC, 10A @ 60 VDC and 3A @ 200 VDC • MOSFET output • DC control • Low on-state impedance PRODUCT SELECTION Control Voltage 3-10 VDC 20-28 VDC 3A 5A 6A 10A 10A 20A CMX200D3 CMXE200D3 CMX60D5

cmx100d10

Abstract: CMX60D10 CMX200D3
Contextual Info: CMX Series • SIP SSR • Ratings to 10A @ 100 VDC, 10A @ 60 VDC and 3A @ 200 VDC • MOSFET output • DC control • Low on-state impedance PRODUCT SELECTION Control Voltage 3-10 VDC 3A 5A 6A 10A 10A 20A CMX200D3 CMX60D5 CMX100D6 CMX60D10 CMX100D10 CMX60D20

Contextual Info: CMX Series • SIP SSR • Ratings to 20A @ 60 VDC, 10A @ 100 VDC, 10A @ 60 VDC and 3A @ 200 VDC • MOSFET output • DC control • Low on-state impedance • CE Compliant to EN60950-1 PRODUCT SELECTION Control Voltage 3-10 VDC 20-28 VDC 3A 5A 6A 10A 10A

Contextual Info: CMX Series • SIP SSR • Ratings to 20A @ 60 VDC, 10A @ 100 VDC, 10A @ 60 VDC and 3A @ 200 VDC • MOSFET output • DC control • Low on-state impedance • CE Compliant to EN60950-1 PRODUCT SELECTION Control Voltage 3-10 VDC 20-28 VDC 3A 5A 6A 10A 10A

CMX Series

Abstract: cmx100d10 EN60950 CMX60D10 310VDC
Contextual Info: CMX Series • SIP SSR • Ratings to 20A @ 60 VDC, 10A @ 100 VDC, 10A @ 60 VDC and 3A @ 200 VDC • MOSFET output • DC control • Low on-state impedance • CE Compliant to EN60950-1 PRODUCT SELECTION Control Voltage 3A 5A 6A 10A 10A 20A 3-10 VDC CMX200D3

CEP740A

Abstract: CEB740A CEF740A CEI740A
Contextual Info: CEP740A/CEB740A CEI740A/CEF740A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP740A 400V 650mΩ 10A 10V CEB740A 400V 650mΩ 10A 10V CEI740A 400V 650mΩ 10A 10V CEF740A 400V 650mΩ 10A e 10V D Super high dense cell design for extremely low RDS(ON).

CEB740N

Abstract: CEF740N CEI740N CEP740N
Contextual Info: CEP740N/CEB740N CEI740N/CEF740N N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP740N 400V 550mΩ 10A 10V CEB740N 400V 550mΩ 10A 10V CEI740N 400V 550mΩ 10A CEF740N 400V 550mΩ 10A 10V e 10V D Super high dense cell design for extremely low RDS(ON).

AMS1510

Abstract: AMS1510CM AMS1510CT
Contextual Info: Advanced Monolithic Systems AMS1510 10A LOW DROPOUT VOLTAGE REGULATORS FEATURES APPLICATIONS • Adjustable or Fixed Output 1.5V, 2.5V, 2.85V, 3.0V, 3.3V, 3.5V and 5.0V • Output Current of 10A • Low Dropout, 500mV at 10A Output Current • Fast Transient Response

AMS1510

Abstract: AMS1510CM AMS1510CT
Contextual Info: Advanced Monolithic Systems AMS1510 10A LOW DROPOUT VOLTAGE REGULATORS FEATURES APPLICATIONS • Adjustable or Fixed Output 1.5V, 2.5V, 2.85V, 3.0V, 3.3V, 3.5V and 5.0V • Output Current of 10A • Low Dropout, 500mV at 10A Output Current • Fast Transient Response

GP10NC60HD

Abstract: GB10NC60HD RG 2006 10A 600V JESD97 STGB10NC60HD STGP10NC60HD GP10N gp10nc60
Contextual Info: STGB10NC60HD STGP10NC60HD N-channel 600V - 10A - TO-220 - D2PAK Very fast PowerMESH IGBT General features IC VCE sat (Max)@ 25°C @100°C Type VCES STGB10NC60HD 600V < 2.5V 10A STGP10NC60HD 600V < 2.5V 10A • ■ ■ Low on-voltage drop (Vcesat) 3 3 1

9883

Contextual Info: GBI 10A . GBI 10M power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter /4 Inline bridge Silicon-Bridge Rectifiers GBI 10A . GBI 10M Publish Data Features

PBT-GF30 FR

Abstract: 7283-1020
Contextual Info: Automation Controls Catalog 10A and 80A types *20A type: only UL (Recognized) 200A type has been added. High Capacity of Max. 1,000 V DC Cut-off Possible EP RELAYS (AEP) FEATURES 10A PC board type 10A TM type 20A TM type 80A type New 200A type 300A type

1969inch

Abstract: YAZAKI 7283-1020
Contextual Info: EP AEP (10A and 80A types) High Capacity of Max. 1,000 V DC Cut-off Possible EP RELAYS (AEP) FEATURES 10A PC board type 10A TM type New 20A TM type 80A type 300A type RoHS compliant 1. High-voltage, high-current control capable 400V DC high-voltage switching and

Contextual Info: TP802C09 10A (90V / 10A ) Outline drawings, mm SCHOTTKY BARRIER DIODE K-Pack(L) Features JEDEC Low VF EIAJ Super high speed switching Connection diagram High reliability by planer design Applications High speed power switching 2 1 3 Maximum ratings and characteristics

Contextual Info: TP802C06 10A (60V / 10A ) Outline drawings, mm SCHOTTKY BARRIER DIODE K-Pack(L) Features JEDEC Low VF EIAJ Super high speed switching Connection diagram High reliability by planer design Applications High speed power switching 2 1 3 Maximum ratings and characteristics

10D-5

Contextual Info: LSM-10A D5 Models Single Output, Non-Isolated, 5VIN, 0.8-3.3VOUT, 10A, DC/DC's in SMT Packages NOT RECOMMENDED FOR NEW DESIGNS Typical Unit Features N Step-down buck regulators with industry-standard SMT footprint N 5V input 4.5-5.5V range N 0.8/1/1.2/1.5/1.8/2/2.5/3.3VOUT @10A

PG124S15

Contextual Info: PG124S15 10A (1500V / 10A ) Outline drawings, mm Fast recovery diode Ø3 _ 0,3 15.5+ 0.3 _ 0.3 5.5 + _ 0.3 3.5 + _ 0.3 3+ 1 3 + 0.2 3.5 _ _ 0.4 10.9 + Connection diagram High speed switching 1 Maximum ratings and characteristics 3 Absolute maximum ratings

regulator 4468

Abstract: HP4410DY HP4410DYT TB334
Contextual Info: HP4410DY Data Sheet August 1999 10A, 30V, 0.0135 Ohm, Single N-Channel, Logic Level Power MOSFET • Logic Level Gate Drive • 10A, 30V • rDS ON = 0.0135Ω at ID = 10A, VGS = 10V • rDS(ON) = 0.020Ω at ID = 8A, VGS = 4.5V • Related Literature - TB334, “Guidelines for Soldering Surface Mount

Contextual Info: TP802C06 10A (60V / 10A ) Outline drawings, mm SCHOTTKY BARRIER DIODE K-Pack(L) Features JEDEC Low VF EIAJ Super high speed switching Connection diagram High reliability by planer design 種07. 機 定 h 20 Applications High speed power switching Maximum ratings and characteristics

Contextual Info: 1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode D3PAK APT10SC120B 1200V 10A APT10SC120S 1200V 10A 1 2 2 1 SILICON CARBIDE SCHOTTKY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • PFC And Forward Topologies • Schottky Barrier

c_00572

Contextual Info: 1 2 TO-220 D2PAK 1 - Cathode 2 - Anode Back of Case - Cathode 1 2 1 2 APT10SC60K APT10SC60SA 600V 10A 600V 10A SILICON CARBIDE SCHOTTKY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • PFC And Forward Topologies • Schottky Barrier

PH862C12

Abstract: 10a 120v
Contextual Info: PH862C12 10A (120V / 10A ) [0401] High Voltage Schottky barrier diode Outline drawings, mm Major characteristics 11.6±0.2 Characteristics PH862C12 Units Condition 120 0.88 VRRM VF IO 10 V V Tc=25°C MAX. A Features Low VF High Voltage Center tap connection

PH862C15

Contextual Info: PH862C15 10A (150V / 10A ) [0401] High Voltage Schottky barrier diode Outline drawings, mm Major characteristics 11.6±0.2 Characteristics PH862C15 Units Condition 150 0.90 VRRM VF IO 10 V V Tc=25°C, MAX. A Features Low VF High Voltage Center tap connection