10WT10FN Search Results
10WT10FN Price and Stock
Vishay Semiconductors VS-10WT10FNDIODE SCHOTTKY 100V 10A TO252AA |
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VS-10WT10FN | Tube | 3,000 |
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Vishay Semiconductors VS-10WT10FNTRDIODE SCHOTTKY 100V 10A TO252AA |
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VS-10WT10FNTR | Tape & Reel | 2,000 |
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Vishay Semiconductors VS-10WT10FNTRLDIODE SCHOTTKY 100V 10A TO252AA |
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VS-10WT10FNTRL | Tape & Reel | 3,000 |
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Vishay Semiconductors VS-10WT10FNTRRDIODE SCHOTTKY 100V 10A TO252AA |
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VS-10WT10FNTRR | Tape & Reel | 3,000 |
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10WT10FN Datasheets Context Search
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Contextual Info: 10UT10, 10WT10FN Vishay High Power Products High Performance Schottky Generation 5.0, 10 A 10UT10 FEATURES 10WT10FN • 175 °C high performance Schottky diode • Very low forward voltage drop • Extremely low reverse leakage • Optimized VF vs. IR trade off for high efficiency |
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10UT10, 10WT10FN 10UT10 O-251AA) O-252AA) 18-Jul-08 | |
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Contextual Info: VS-10UT10, VS-10WT10FN www.vishay.com Vishay Semiconductors High Performance Generation 5.0 Schottky Rectifier, 10 A FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop • Extremely low reverse leakage I-PAK TO-251AA D-PAK (TO-252AA) |
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VS-10UT10, VS-10WT10FN O-251AA) O-252AA) 2002/95/EC JEDEC-JESD47 VS-10UT10 11-Mar-11 | |
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Contextual Info: VS-10UT10, VS-10WT10FN www.vishay.com Vishay Semiconductors High Performance Generation 5.0 Schottky Rectifier, 10 A FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop • Extremely low reverse leakage I-PAK TO-251AA D-PAK (TO-252AA) |
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VS-10UT10, VS-10WT10FN O-251AA) O-252AA) 2002/95/EC JEDEC-JESD47 VS-10UT10 2011/65/EU 2002/95/EC. | |
95026Contextual Info: 10UT10, 10WT10FN Vishay High Power Products High Performance Schottky Generation 5.0, 10 A 10UT10 FEATURES 10WT10FN • 175 °C high performance Schottky diode • Very low forward voltage drop • Extremely low reverse leakage • Optimized VF vs. IR trade off for high efficiency |
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10UT10, 10WT10FN 10UT10 O-251AA) O-252AA) AEC-Q101 2002/95/EC 18-Jul-08 95026 | |
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Contextual Info: VS-10UT10, VS-10WT10FN Vishay Semiconductors High Performance Schottky Generation 5.0, 10 A FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop • Extremely low reverse leakage I-PAK TO-251AA D-PAK (TO-252AA) Base cathode |
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VS-10UT10, VS-10WT10FN O-251AA) O-252AA) 2002/95/EC VS-10UT10 11-Mar-11 | |
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Contextual Info: VS-10UT10, VS-10WT10FN www.vishay.com Vishay Semiconductors High Performance Generation 5.0 Schottky Rectifier, 10 A FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop • Extremely low reverse leakage I-PAK TO-251AA D-PAK (TO-252AA) |
Original |
VS-10UT10, VS-10WT10FN O-251AA) O-252AA) 2002/95/EC JEDEC-JESD47 VS-10UT10 11-Mar-11 | |
vishay 1N4007 DO-214AC
Abstract: VS-30BQ060PbF 40MT160KPBF vishay 1N4007 DO-213AB ss32 control pack 70MT160KPBF 20bq030pbf 430 SBL2040CT v40150 MBR10T100
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VMN-SG2178-1111 vishay 1N4007 DO-214AC VS-30BQ060PbF 40MT160KPBF vishay 1N4007 DO-213AB ss32 control pack 70MT160KPBF 20bq030pbf 430 SBL2040CT v40150 MBR10T100 | |
vishay 1N4007 DO-214AC
Abstract: 7 Segment common cathode MBR360 smd diode DGP30 05B2S SMD DIODE UF4007 1N4007 DO-214BA VS-30BQ100PBF 1N5822 SMD 1N4007 MINI MELF
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VMN-SG2125-1009 vishay 1N4007 DO-214AC 7 Segment common cathode MBR360 smd diode DGP30 05B2S SMD DIODE UF4007 1N4007 DO-214BA VS-30BQ100PBF 1N5822 SMD 1N4007 MINI MELF |