108 TO 174 MHZ Search Results

DBM20

Contextual Info: 5530 UNION CENTRE DRIVE WEST CHESTER, OHIO 45069 USA PH: 513-870-9060 FAX: 513-870-9064 PRELIMINARY MINI-HYBRID Digitally Tunable Bandpass Filter Frequency Coverage …………….….….108 to 505 MHz 108-156 MHz 118-174 MHz 225-400 MHz 240-360 MHz 275-505 MHz

ericsson 10159

Abstract: PTF10159 470-860 mhz Power amplifier w
Contextual Info: PTF 10159 120 Watts, 470–860 MHz GOLDMOS Field Effect Transistor Description The PTF 10159 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for large signal television amplifier applications from 470 to 860 MHz. It is rated at 120 watts power

ericsson 10159

Abstract: PTF 10159 10159 atc 174 capacitor siemens 4700 35 G200 K1206 UT-85-25 470-860 mhz Power amplifier w UT85-25
Contextual Info: PTF 10159 120 Watts, 470–860 MHz GOLDMOS Field Effect Transistor Description The PTF 10159 is an internally matched, LDMOS FET intended for large signal television amplifier applications from 470 to 860 MHz. It is rated at 130 watts power output. Nitride surface passivation and

Contextual Info: WJ-PA12/SMPA12 10 to 1200 M H z TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH OUTPUT POWER: +24.5 dBm TYP. @ +20 Vdc ♦ WIDE POWER SUPPLY RANGE: +12 TO +20 VOLTS ♦ WIDE BANDWIDTH: 10 TO 1200 MHz ♦ LOW VSWR: < 1.5:1 (TYP.) Outline Drawings

RFW8021

Abstract: heraeus Heraeus PD 860002 SA chip antenna express card DVB 86-0002
Contextual Info: RFW8021 Vishay RFWaves RFW8021 Chip Antenna for Mobile Devices FEATURES • Small outline 10.5 x 15.5 x 1.2 mm • • • • Omni directional, linear polarization Complies with MBRAI standard Complete UHF band coverage (470 MHz to 860 MHz) Requires a tuning circuit and ground plane for optimal

surface mount transistor A40

Abstract: transistor BC 157
Contextual Info: W J - A 4 / S M A 4 500 TO 4000 MHz TO-8 CASCAD ABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT ULTRA-WIDE BANDWIDTH: 500-4000 MHz HIGH GAIN -TWO STAGES: 14.5 dB TYP. HIGH OUTPUT LEVEL: +15.0 dBm (TYP.) Outline Drawings A40 Specifications’* 0.450 n

WJ-A35-1

Abstract: WJ-CA35-1
Contextual Info: WJ-A35-1 / SMA35-1 2 to 2400 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ ULTRA WIDE BANDWIDTH: 1 - 2600 MHz TYP. ♦ MEDIUM OUTPUT LEVEL: +9.5 dBm (TYP.) Outline Drawings A35-1 Specifications 0.200 (5.08) Guaranteed Typical Characteristics

vitramon VJ

Abstract: Heraeus PD 860002 SA
Contextual Info: VJ 6040 Vishay Vitramon VJ 6040 UHF Chip Antenna for Mobile Devices FEATURES • Small outline 10.5 mm x 15.5 mm x 1.2 mm • Omni directional, linear polarization • Complies with MBRAI standard • Complete UHF band coverage (470 MHz to 860 MHz) • Requires a tuning circuit and ground plane for optimal

CMMB antenna

Abstract: 6040 vitramon VJ antenna radiation 86-0002
Contextual Info: VJ 6040 Vishay Vitramon VJ 6040 UHF Chip Antenna for Mobile Devices FEATURES • Small outline 10.5 mm x 15.5 mm x 1.2 mm • Omni-directional, linear polarization • Complies with MBRAI standard • Complete UHF band coverage (470 MHz to 860 MHz) up to 1.1 GHz

RF Power Modules

Abstract: BGY47 Philips Semiconductors RF Power Modules BGY145B BGY110E SOT-246 BGY110F "RF Power Modules" GP 132
Contextual Info: Philips Semiconductors RF power modules Type number survey INTRODUCTION In this alphanumeric list we present all RF power modules mentioned in this handbook, together with the most important data. TYPE NUMBER ENVELOPE Vs V f Pl (MHz) (W) Gp (dB) PAGE BGY32

Philips Semiconductors RF Power Modules

Abstract: RF Power Modules Philips Semiconductors Selection Guide BGY110E "RF Power Modules"
Contextual Info: Philips Semiconductors RF power modules Selection guide INTRODUCTION The following tables represent our complete range of RF power modules. VHF modules for mobile transminers f MHz Pl (W) Vs (V) 18 12.5 68 to 88 18 12.5 80 to 108 18 12.5 132 to 156 18 12.5

Contextual Info: VJ 6040 Vishay Vitramon VJ 6040 UHF Chip Antenna for Mobile Devices FEATURES • Small outline 10.5 mm x 15.5 mm x 1.2 mm • Omni-directional, linear polarization • Complies with MBRAI standard • Complete UHF band coverage (470 MHz to 860 MHz) up to 1.1 GHz

Contextual Info: VJ 6040 Vishay Vitramon VJ 6040 UHF Chip Antenna for Mobile Devices FEATURES • Small outline 10.5 mm x 15.5 mm x 1.2 mm • Omni-directional, linear polarization • Complies with MBRAI standard • Complete UHF band coverage (470 MHz to 860 MHz) up to 1.1 GHz

heraeus

Abstract: uhf pcb antenna VJ6040 WO2008154173 Heraeus PD 860002 SA
Contextual Info: VJ 6040 Vishay Vitramon VJ 6040 UHF Chip Antenna for Mobile Devices FEATURES • Small outline 10.5 mm x 15.5 mm x 1.2 mm • Omni-directional, linear polarization • Complies with MBRAI standard • Complete UHF band coverage (470 MHz to 860 MHz) up to 1.1 GHz

WJ-A88-1

Abstract: WJ-A88 ATIC 91
Contextual Info: WJ-A88-1 / SMA88-1 5 to 300 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN: 18.5 dB TYP. HIGH OUTPUT POWER: +18.5 dBm (TYP.) HIGH THIRD ORDER I.P.: +30 dBm (TYP.) Outline Drawings A88-1 Specifications* 0.460 □ (11.41)°

"RF Power Modules"

Abstract: BLW85 bfq34 RF Power Modules BLF147 BLF244 BLW83 BLW33 BLF175 bfg97
Contextual Info: DISCRETE SEMICONDUCTORS Line-ups RF & Microwave Power Transistors and RF Power Modules Supersedes data of 1998 Feb 5 2000 Mar 02 Philips Semiconductors RF & Microwave Power Transistors and RF Power Modules Line-ups SSB TRANSMITTERS 1.5 to 30 MHz INPUT POWER

TRANSISTOR C 5387

Contextual Info: WJ-LA45-1 / SMLA45-1 1000 to 4000 MHz TO-8 CASCADABLE LIMITING AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ SYMMETRICAL CLIPPING: GOOD EVEN ORDER SUPPRESSION Outline Drawings LA45-1 . o«„ ♦ HIGH OUTPUT LEVEL: +17 dBm TYP. ♦ MEDIUM GAIN: 14.0 dB (TYP.)

MRF5811LT1

Abstract: MRF5811L 742 792 07 742 792 71 Transistor motorola 418 742 792 116 NF50 TUNER 0436 HP11590B
Contextual Info: MOTOROLA Order this document by MRF5811LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF5811LT1 NPN Silicon High-Frequency Transistor • • • • • • • • Designed for high current, low power amplifiers up to 1.0 GHz. Low Noise 2.0 dB @ 500 MHz

rfsemi

Contextual Info: S IE M E N S CLY29 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 8 GHz • Hermetically sealed microwave power package • Low thermal resistance for

CLY29

Abstract: CLY29-00 CLY29-05 CLY29-10 GMW05880 IDp12
Contextual Info: CLY29. HiRel C-Band GaAs Power- MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 8 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application

mfc-1780a

Contextual Info: VOLTAGE CONTROLLED OSCILLATORS MINIATURE SURFACE-MOUNT PACKAGE FREQUENCY RANGE NOMINAL TUNING VOLTAGE DC BIAS REQUIREMENTS OUTPUT POWER Tolerance dB TYPICAL TYPICAL PHASE NOISE HARMONIC dBc/Hz SUPPRESSION Offset at 10 KHz/100 KHz (dBc) PUSHING PULLING (MHz/Volt)

CLY29

Abstract: CLY29-00 CLY29-05 CLY29-10
Contextual Info: CLY29 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 8 GHz • Hermetically sealed microwave power package • • Low thermal resistance for high voltage application

MRF5811

Abstract: MRF5811L TRANSISTOR SF 128 HP11590B HP11590
Contextual Info: MOTOROLA Order this document by MRF5811LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF5811LT1 NPN Silicon High-Frequency Transistor • • • • • • • • Designed for high current, low power amplifiers up to 1.0 GHz. Low Noise 2.0 dB @ 500 MHz

CLY29

Abstract: CLY29-00 CLY29-05 CLY29-10
Contextual Info: CLY29 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 8 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application