1060 NM GAAS LASER DIODE Search Results

1060 nm GaAs Laser Diode

Abstract: TEM00 5d-fb
Contextual Info: DATA SHEET EYP-DFB-1060-00040-1500-BFY02-0000 Version 1.02 2009-01-07 page 1 from 5 DFB/DBR TPL/TPA DISTRIBUTED FEEDBACK LASER GaAs Semiconductor Laser Diode with integrated grating structure RWE/RWL BAL General Product Information Product Application 1060 nm DFB Laser with hermetic Butterfly Housing

1060 nm GaAs Laser Diode

Abstract: 1060 nm semiconductor laser injection laser diode
Contextual Info: Version 0.90 18.09.2008 page: 1 from 4 DFB/DBR TPL/TPA TAPERED AMPLIFIER GaAs Semiconductor Laser Diode RWE/RWL PRELIMINARY SPECIFICATION BAL Tapered Amplifier EYP-TPA-1060-00500-3006-CMT03-0000 General Product Information Product Application 1060 nm Tapered Amplifier

1060 nm GaAs Laser Diode

Abstract: ridge waveguide semiconductor laser tunable laser diode GaAs diode nm laser diode lifetime
Contextual Info: Version 0.90 28.01.2008 page: 1 from 4 DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER with AR-COATING GaAs Semiconductor Laser Diode Tunable Fabry-Perot Laser for External Cavity Operation PRELIMINARY SPECIFICATION RWE/RWL BAL RWE Laser EYP-RWE-1060-10020-0750-SOT01-0000

1060 nm GaAs Laser Diode

Abstract: GaAs diode nm TEM00
Contextual Info: 0.91 31.01.2008 page: 1 from 4 BAL DFB/DBR TPL/TPA DISTRIBUTED FEEDBACK LASER GaAs Semiconductor Laser Diode with integrated grating structure RWE/RWL PRELIMINARY SPECIFICATION DFB Laser EYP-DFB-1060-00150-1500-SOT02-0000 General Product Information Product

GaAs diode nm

Abstract: TEM00 1060 nm GaAs Laser Diode
Contextual Info: Version 0.91 31.01.2008 page: 1 from 4 DFB/DBR TPL/TPA DISTRIBUTED FEEDBACK LASER GaAs Semiconductor Laser Diode with integrated grating structure RWE/RWL BAL PRELIMINARY SPECIFICATION DFB Laser EYP-DFB-1060-00150-1500-TOC03-0000 General Product Information

1060 nm GaAs Laser Diode

Contextual Info: Ridge Waveguide Laser GaAs Semiconductor Laser Diode Absolute Maximum Ratings Operational Temperature at case Symbol TC Unit °C IF VR mA 200 V Forward Current Reverse Voltage min typ max 50 Stress in excess of the Absolute Maximum Ratings can cause permanent damage to the

1060 nm GaAs Laser Diode

Abstract: LC100-S
Contextual Info: LASER DIODE LC-100S-1060D LC-100S-1060D is AIGaAs/GaAS MQW structure fabricated by MOCVD semiconductor laser. Low threshold current and high slope efficiency contribute to low operating current enhancing reliability. LC-100S-1060D is a CW single mode injection semiconductor laser with built-in monitor photodiode to

1060 nm GaAs Laser Diode

Abstract: 1055 NM1055
Contextual Info: Broad Area Laser GaAs Semiconductor Laser Diode Absolute Maximum Ratings Operational Temperature at case Symbol TC Unit °C IF VR A 3,5 V Forward Current Reverse Voltage min typ max 50 Stress in excess of the Absolute Maximum Ratings can cause permanent damage to the

SG1009A

Abstract: SG1009AF C30116 SG1002 ca3013 C3001 g2005 OP-10 OP-18 C30119
Contextual Info: Features SG1009 •Half-angle beam spread of 8 ° for SG1009, SG1009A 30° for SG1009A/F C30119, C30123 •Frequency response of 150 MHz for C30119, 50 MHz for C30123 SG1002, SG1003, SG1004 •Compact design for closely spaced PC-board mounting •1 5 ° half-angle beam spread (50% intensity

FND-100Q

Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
Contextual Info: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.

Contextual Info: 80 & 200 m InGaAs Avalanche Photodiode Preamplifier Module MICROELECTRONICS 264-339757-VAR Description CMC Electronics’ 264-339757-VAR are using a low noise InGaAs APD with an ionization ratio of 0.2 with a GaAs FET input transimpedance amplifier in a 12-lead TO-8 package. The

P873-G35-552

Abstract: p1760-04 P873-13
Contextual Info: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel­ oped a variety of opto-electronic semiconductor de­ vices. These competitively priced high quality products are designed to meet the requirements of general and

Contextual Info: New Product Guide Low Power Consumption, Short-Lead Photointerrupter Photo-IC Output Type TLP1031, TLP1033 and TLP1037 Low power consumption, short-lead photointerrupter (photo-IC output type) TLP1031•TLP1033•TLP1037 Maximum Ratings (Ta = 2 Rating LED

5252 F led

Abstract: P1031 5252 F 1002 P-1031 p1037 tl 701 amp diagram
Contextual Info: New Product Guide Low Power Consumption, Short-Lead Photointerrupter Photo-IC Output Type TLP1031, TLP1033 and TLP1037 Low power consumption, short-lead photointerrupter (photo-IC output type) TLP1031•TLP1033•TLP1037 Maximum Ratings (Ta = 2 Rating LED

H10769A

Abstract: H10770A H7422
Contextual Info: NEWS 01 2010 SOLID STATE PRODUCTS PAGE 10 New silicon infrared enhanced photodiodes for scientific measurement and YAG laser monitoring SOLID STATE PRODUCTS CCD image sensors S11510 series PAGE 12 ELECTRON TUBE PRODUCTS Side-on PMT R9876, R11540 PAGE 25 SYSTEMS PRODUCTS

smd diode UJ 64 A

Abstract: SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI
Contextual Info: PRICE LIST 03/2015 Wiedner Hauptstrasse 76, Vienna, Austria EUR USD Tel: +43-1-586 52 430, Fax: +43-1-586 52 43 44 1,00 1,10182 office@roithner-laser.com, www.roithner-laser.com 2015-06-03 last update 2015-06-03 LASER DIODES - UV EUR USD 1-9 pcs. 1-9 pcs.

C1383 NPN transistor collector base and emitter

Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Contextual Info: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,

Photo diode TFK S 186 P

Abstract: IR diodes TFK S 186 P TFK S153P TFK BPW 41 N IR diode TFK 186 TFK BPW 20 TFK S 186 P monocrystalline solar cell power crest audio pro 8200 GERMANIUM phototransistor
Contextual Info: Infrared Emitters and Detectors Data Book 1997 Contents General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Alphanumeric Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Photo diode TFK S 186 P

Abstract: TFMS 4300 IR diodes TFK S 186 P TFK BPW 41 N diode TFMt 4300 tfmt 4300 ir detector IR diode TFK 186 tfms 4300 n mobile receptor tfm 5380 TFK S 186 P
Contextual Info: Infrared Emitters and Detectors Data Book 1994 TELEFUNKEN Semiconductors TELEFUNKEN Semiconductors Table of Contents General Information 1. Selector guide 11 1.1 1.2 1.3 1.4 1.5 Alpha-numeric index IR emitters Detectors Photomodules IrDA-infrared data transmission

TFK 7 segment displays

Abstract: TFK 609 7-segment display tfk "seven segment display" tfk tfk 648 TFK BPW 41 N smd code marking Ld50 tfk 605 TFK 7 segment d 350 28 tfk 727
Contextual Info: LEDs and Displays Data Book 1996 TELEFUNKEN Semiconductors Contents General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Selector Guide – Alphanumeric Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

TORX142

Abstract: TOTX1701 TOTX142 todx2701 toslink transmitter JIS F05 connectors Mini Toslink Receiver torx1701 TOSLINK* package TODX2404
Contextual Info: 2005-7 PRODUCT GUIDE Fiber-Optic Devices TOSLINK semiconductor http://www.semicon.toshiba.co.jp/eng TM TOSLINK Optical Transmission Devices TOSLINK™ is a family of data transmission devices that use optical signals instead of electrical signals. Because TOSLINK uses an optical fiber cable as

Leader 8020 schematics Oscilloscope

Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
Contextual Info: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book infrared emitters and detectors vishay semiconductors vse-db0103-0810 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

free transistor equivalent book 2sc

Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of

DIN 18541

Abstract: Opto Coupler TLP 621 ic 741 clamper LM 10841 IEC 60061-1 TLHY46 smd glass zener diode color codes TDC 310 NTC an 17807 a Opto Coupler TLP 521
Contextual Info: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book leds and displays vishay semiconductors vHN-db2101-0409 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents