1060 FET Search Results

DDX-1080

Abstract: 1060 fet car mosfet audio amplifier diagram full bridge mosfet DDX-1050
Contextual Info: DDX-1080/DDX-1060/DDX-1050 All-Digital High Efficiency Power Amplifiers FEATURES • • PRODUCT OVERVIEW HIGH OUTPUT CAPABILITY DDX Full-Bridge Mode: * * * DDX-1080: 1 x 80 / 80 W, 6 / 8Ω, <10% THD DDX-1060: 1 x 62 / 80 W, 6 / 8Ω, <10% THD DDX-1050: 1 x 50 / 65 W, 6 / 8Ω, <10% THD

C30817E

Abstract: SILICON APD Pre-Amplifier
Contextual Info: DATASHEET Photon Detection C30659 Series 900/1060/1550/1550E Si and InGaAs APD Preamplifier Modules Key Features E C -1550E InGasAs APD Preamplifier Modules exhibit enhanced damage threshold and greater resilience when exposed to higher optical power densities.

diode d1n914

Abstract: d1n914 DIODE d1n914 C30817E C30659-1550-R2A InGaas PIN photodiode, 1550 NEP C30950 Silicon and InGaAs APD Preamplifier Modules C30954E avalanche photodiode 1550nm sensitivity
Contextual Info: 117142_C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP

SII3132

Abstract: SII3132CNU gather capacitor power one pmp 7.24 111B 1.5G msi 9121 SiI-DS-0138-C 0xeb140101 MSI 7129 diagram MS 7125
Contextual Info: SiI-DS-0138-C Revision C 02 Feb 2007 SiI3132 PCI Express to Serial ATA Controller Data Sheet Silicon Image, Inc. 1060 East Arques Ave. Sunnyvale CA 94085 408 616-4000 www.siliconimage.com Copyright 2006, Silicon Image, Inc. All rights reserved. No part of this publication may be reproduced, transmitted,

Contextual Info: SN751730 TRIPLE LINE DRIVERS/RECEIVERS D3404, MAY 1060 Meets IBM 360/370 Input/Output Interface Specification for 4.5 Mb/s Operation D O R N PACKAGE TOP VIEW Single 5-V Supply DE1 [ 1 U i e ] V CC RI1 [ 2 15 ] D01 14 □ D ll R01 [ 3 Uncommitted Emltter-Follower Output

Contextual Info: Low Cost 270 MHz Differential Receiver Amplifiers AD8129/AD8130 CONNECTION DIAGRAM High speed AD8130: 270 MHz, 1090 V/µs @ G = +1 AD8129: 200 MHz, 1060 V/µs @ G = +10 High CMRR 94 dB min, dc to 100 kHz 80 dB min @ 2 MHz 70 dB @ 10 MHz High input impedance: 1 MΩ differential

AD8131

Abstract: AD8129 AD8129AR AD8130 AD8132
Contextual Info: a Low-Cost 270 MHz Differential Receiver Amplifiers AD8129/AD8130 FEATURES High Speed AD8130: 270 MHz, 1090 V/␮s @ G = 1 AD8129: 200 MHz, 1060 V/␮s @ G = 10 High CMRR 94 dB Min, DC to 100 kHz 80 dB Min @ 2 MHz 70 dB @ 10 MHz High-Input Impedance: 1 M⍀ Differential

SD 1083

Abstract: SD1087 2SD1084 2sd1033 2SD1238 2sd1245 2SD987 2SD772B 2SD1706 2SD1134
Contextual Info: 230 - m « Type No. 2SD 1055 ^ =fet □— A 2SD 1059 ✓ 2SD 1060 2SD 1061 ^ 2SD 1062 2SD 1 0 6 3 * * é ?sn inß* , 2 SD 106 5 - 2 SD 1067 2SD 1069 € Manuf. m = = & E & E & E ß E Pß E # M 'S. 2SD 1070 2SD 1071 n±m m 2 SD 1072 m ±w » 2 SD 1073 « ± s «

tef 6624

Abstract: SEG382 Hitachi DSA002733 1301H
Contextual Info: HD66763 384-channel Segment Driver with Internal RAM for 256-color Displays Rev.1.0 July, 2001 Description The HD66763, 384-channel segment driver LSI, displays 128RGB-by-176-dot graphics on STN displays in 256 colors. It is for driving STN color LCD displays to a maximum of 128RGB by 176

T4 1060

Abstract: SST29EE512-70-4I-NHE 32-PIN SST29EE512
Contextual Info: 512 Kbit 64K x8 Page-Write EEPROM SST29EE512 SST29EE512512Kb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE512 • Superior Reliability – Endurance: 100,000 Cycles (typical)

sunplus LCD

Abstract: 001C SEG23 SPL15B1 4T128
Contextual Info: SPL15B1 72KB LCD CONTROLLER/DRIVER GENERAL DESCRIPTION FEATURES The SPL15B1 is a CMOS 8-bit single chip microprocessor which Built-in 8-bit CPU contains RAM, ROM, I/Os, interrupt controller, 8-bit PWM audio 128 bytes SRAM output and automatic display controller/driver for LCD.

Contextual Info: MwT-14 _ 12 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y • 2 WATT POWER OUTPUT AT 6 GHz • HIGH ASSOCIATED GAIN • 0.3 MICRON REFRACTORY METAI7GOLD GATE • 5 mm GATE WIDTH • DIAMOND-LIKE CARBON DLC PASSIVATION DESCRIPTION

GPL15B1

Abstract: 001C SEG23
Contextual Info: GPL15B1 72KB LCD CONTROLLER/DRIVER 1. GENERAL DESCRIPTION 3. FEATURES The GPL15B1 is a CMOS 8-bit single chip microprocessor which „ Built-in 8-bit CPU contains RAM, ROM, I/Os, interrupt controller, 8-bit PWM audio „ 128 bytes SRAM output and automatic display controller/driver for LCD.

"MOSFET Modules"

Abstract: MOSFET Modules power mosfet 500 A PM45502C PM50302F MOSFET 450 1060 fet PM4550J PM4575J PM50100K
Contextual Info: HITACHI 16 1.7 Power MOSFET Modules module type . These devices incorporate high speed source / drain diodes. Hitachi has developed two m odule packages, each incorporating two independent pow er MOSFETs with channel power dissipations of 200W or 300W per FET chip depending on the

Contextual Info: SPL15B 7 2KB LCD Controller/Driver 72 AUG. 23, 2001 Version 1.6 SUNPLUS TECHNOLOGY CO. reserves the right to change this documentation without prior notice. Information provided by SUNPLUS TECHNOLOGY CO. is believed to be accurate and reliable. However, SUNPLUS TECHNOLOGY CO. makes no warranty for any errors which may appear in this document.

FND-100Q

Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
Contextual Info: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT100N06 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UTT100N06 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance.

Contextual Info: FLC157XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 31.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: ηadd = 29.5%(Typ.) Proven Reliability Drain DESCRIPTION Drain Gate The FLC157XP chip is a power GaAs FET that is designed for

UTT100N08

Abstract: RG04
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT100N08 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UTT100N08 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance.

2SJ390

Contextual Info: 2SJ390 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTT100N06 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION 1 The UTC UTT100N06 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching

Contextual Info: FLC157XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 31.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: hadd = 29.5%(Typ.) Proven Reliability Drain DESCRIPTION Drain Gate The FLC157XP chip is a power GaAs FET that is designed for

Contextual Info: FLC157XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 31.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: ηadd = 29.5%(Typ.) Proven Reliability Drain DESCRIPTION Drain Gate The FLC157XP chip is a power GaAs FET that is designed for

Contextual Info: _ DATA SHEET_ MOS FIELD EFFECT POWER TRANSISTORS 2SJ494 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION in millimeter This product is P-Channel MOS Field Effect Transistor designed for high current switching applications.