1060 FET Search Results

DDX-1080

Abstract: 1060 fet car mosfet audio amplifier diagram full bridge mosfet DDX-1050
Contextual Info: DDX-1080/DDX-1060/DDX-1050 All-Digital High Efficiency Power Amplifiers FEATURES • • PRODUCT OVERVIEW HIGH OUTPUT CAPABILITY DDX Full-Bridge Mode: * * * DDX-1080: 1 x 80 / 80 W, 6 / 8Ω, <10% THD DDX-1060: 1 x 62 / 80 W, 6 / 8Ω, <10% THD DDX-1050: 1 x 50 / 65 W, 6 / 8Ω, <10% THD

C30817E

Abstract: SILICON APD Pre-Amplifier
Contextual Info: DATASHEET Photon Detection C30659 Series 900/1060/1550/1550E Si and InGaAs APD Preamplifier Modules Key Features E C -1550E InGasAs APD Preamplifier Modules exhibit enhanced damage threshold and greater resilience when exposed to higher optical power densities.

diode d1n914

Abstract: d1n914 DIODE d1n914 C30817E C30659-1550-R2A InGaas PIN photodiode, 1550 NEP C30950 Silicon and InGaAs APD Preamplifier Modules C30954E avalanche photodiode 1550nm sensitivity
Contextual Info: 117142_C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP

Contextual Info: DATASHEET Photon Detection LLAM Series 900/1060/1550/1550E Si and InGaAs Low-Light Analog APD Receiver Modules LLAM Key Features E LLAM-1550E InGasAs APD Preamplifier Modules exhibit enhanced damage threshold and greater resilience when exposed to higher optical power densities.

C30817E

Contextual Info: 117142_C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP

TM1060

Abstract: TELMOS INC h1080 TML1060 TML1060CCE
Contextual Info: <7 TML1060 FLASH CONVERTER TELMOS INC. September 1983 Features Description • • • • • • • The Model TML 1060 is a CMOS 6 bit parallel flash A/D converter designed for 7MHz sampling at low power levels. Although nominal power level is 150mW,

SII3132

Abstract: SII3132CNU gather capacitor power one pmp 7.24 111B 1.5G msi 9121 SiI-DS-0138-C 0xeb140101 MSI 7129 diagram MS 7125
Contextual Info: SiI-DS-0138-C Revision C 02 Feb 2007 SiI3132 PCI Express to Serial ATA Controller Data Sheet Silicon Image, Inc. 1060 East Arques Ave. Sunnyvale CA 94085 408 616-4000 www.siliconimage.com Copyright 2006, Silicon Image, Inc. All rights reserved. No part of this publication may be reproduced, transmitted,

Contextual Info: SN751730 TRIPLE LINE DRIVERS/RECEIVERS D3404, MAY 1060 Meets IBM 360/370 Input/Output Interface Specification for 4.5 Mb/s Operation D O R N PACKAGE TOP VIEW Single 5-V Supply DE1 [ 1 U i e ] V CC RI1 [ 2 15 ] D01 14 □ D ll R01 [ 3 Uncommitted Emltter-Follower Output

Contextual Info: Low Cost 270 MHz Differential Receiver Amplifiers AD8129/AD8130 CONNECTION DIAGRAM High speed AD8130: 270 MHz, 1090 V/µs @ G = +1 AD8129: 200 MHz, 1060 V/µs @ G = +10 High CMRR 94 dB min, dc to 100 kHz 80 dB min @ 2 MHz 70 dB @ 10 MHz High input impedance: 1 MΩ differential

AD8131

Abstract: AD8129 AD8129AR AD8130 AD8132
Contextual Info: a Low-Cost 270 MHz Differential Receiver Amplifiers AD8129/AD8130 FEATURES High Speed AD8130: 270 MHz, 1090 V/␮s @ G = 1 AD8129: 200 MHz, 1060 V/␮s @ G = 10 High CMRR 94 dB Min, DC to 100 kHz 80 dB Min @ 2 MHz 70 dB @ 10 MHz High-Input Impedance: 1 M⍀ Differential

Contextual Info: Low Cost 270 MHz Differential Receiver Amplifiers AD8129/AD8130 CONNECTION DIAGRAM High speed AD8130: 270 MHz, 1090 V/ s @ G = 1 AD8129: 200 MHz, 1060 V/μs @ G = 10 High CMRR 94 dB min, dc to 100 kHz 80 dB min @ 2 MHz 70 dB @ 10 MHz High input impedance: 1 MΩ differential

SD 1083

Abstract: SD1087 2SD1084 2sd1033 2SD1238 2sd1245 2SD987 2SD772B 2SD1706 2SD1134
Contextual Info: 230 - m « Type No. 2SD 1055 ^ =fet □— A 2SD 1059 ✓ 2SD 1060 2SD 1061 ^ 2SD 1062 2SD 1 0 6 3 * * é ?sn inß* , 2 SD 106 5 - 2 SD 1067 2SD 1069 € Manuf. m = = & E & E & E ß E Pß E # M 'S. 2SD 1070 2SD 1071 n±m m 2 SD 1072 m ±w » 2 SD 1073 « ± s «

HSMS-2822

Abstract: P6245 TEK 461 AD8129 AD8129AR AD8130 AD8131 AD8132 analog devices branding HPA AD8130ARM2
Contextual Info: a Low Cost 270 MHz Differential Receiver Amplifiers AD8129/AD8130 FEATURES High Speed AD8130: 270 MHz, 1090 V/␮s @ G = 1 AD8129: 200 MHz, 1060 V/␮s @ G = 10 High CMRR 94 dB Min, DC to 100 kHz 80 dB Min @ 2 MHz 70 dB @ 10 MHz High Input Impedance: 1 M⍀ Differential

Oasis SiliconSystems AG

Abstract: AD8132 AD8139 P6245 AD8129 AD8130 AD8131
Contextual Info: Low Cost 270 MHz Differential Receiver Amplifiers AD8129/AD8130 CONNECTION DIAGRAM High speed AD8130: 270 MHz, 1090 V/ s @ G = +1 AD8129: 200 MHz, 1060 V/μs @ G = +10 High CMRR 94 dB min, dc to 100 kHz 80 dB min @ 2 MHz 70 dB @ 10 MHz High input impedance: 1 MΩ differential

Contextual Info: 80 & 200 m InGaAs Avalanche Photodiode Preamplifier Module MICROELECTRONICS 264-339757-VAR Description CMC Electronics’ 264-339757-VAR are using a low noise InGaAs APD with an ionization ratio of 0.2 with a GaAs FET input transimpedance amplifier in a 12-lead TO-8 package. The

tef 6624

Abstract: SEG382 Hitachi DSA002733 1301H
Contextual Info: HD66763 384-channel Segment Driver with Internal RAM for 256-color Displays Rev.1.0 July, 2001 Description The HD66763, 384-channel segment driver LSI, displays 128RGB-by-176-dot graphics on STN displays in 256 colors. It is for driving STN color LCD displays to a maximum of 128RGB by 176

smooth l 7251 3.1

Abstract: gk71 tef 6624 l 7251 wd S-E26 GK 105 Hitachi DSAUTAZ006 SEG270 gk43 c 1060
Contextual Info: —PRELIMINARY— HD66763 384-channel Segment Driver with Internal RAM for 256-color Displays n o ti Preliminary Specification Rev.0.4 January, 2001 a c fi i c e Description Sp The HD66763, 384-channel segment driver LSI, displays 128RGB-by-176-dot graphics on STN

scr tic 1060

Abstract: tic 1060 BH 1060 TSI 568 HD6432655F REJ09B0331-0500 CMOS HD6432653 HD6472655F BCRH HD6432653
Contextual Info: REJ09B0331-0500 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. H8S/2655 Group 16 Hardware Manual

free transistor equivalent book

Abstract: Nippon capacitors japan transistors book
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

T4 1060

Abstract: SST29EE512-70-4I-NHE 32-PIN SST29EE512
Contextual Info: 512 Kbit 64K x8 Page-Write EEPROM SST29EE512 SST29EE512512Kb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE512 • Superior Reliability – Endurance: 100,000 Cycles (typical)

GLS29EE512

Abstract: GLS29EE512-70-4I-NH GLS29EE512-70-4I-NHE GLS29EE512-70-4C-NH GLS29EE512-70-4C-EHE 32-PIN GLS29EE512-70-4C-NHE GLS29EE512-70
Contextual Info: 512 Kbit 64K x8 Page-Write EEPROM GLS29EE512 GLS29EE512512Kb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for GLS29EE512 • Superior Reliability – Endurance: 100,000 Cycles (typical)

sunplus LCD

Abstract: 001C SEG23 SPL15B1 4T128
Contextual Info: SPL15B1 72KB LCD CONTROLLER/DRIVER GENERAL DESCRIPTION FEATURES The SPL15B1 is a CMOS 8-bit single chip microprocessor which Built-in 8-bit CPU contains RAM, ROM, I/Os, interrupt controller, 8-bit PWM audio 128 bytes SRAM output and automatic display controller/driver for LCD.

001C

Abstract: SEG23 SPL15B1
Contextual Info: S PL15B1 SP 7 2KB LCD Controller/Driver 72 AUG. 23, 2001 Version 1.2 SUNPLUS TECHNOLOGY CO. reserves the right to change this documentation without prior notice. Information provided by SUNPLUS TECHNOLOGY CO. is believed to be accurate and reliable. However, SUNPLUS TECHNOLOGY CO. makes no warranty for any errors which may appear in this document.

Contextual Info: MwT-14 _ 12 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y • 2 WATT POWER OUTPUT AT 6 GHz • HIGH ASSOCIATED GAIN • 0.3 MICRON REFRACTORY METAI7GOLD GATE • 5 mm GATE WIDTH • DIAMOND-LIKE CARBON DLC PASSIVATION DESCRIPTION