105 M5E Search Results

Contextual Info: M5E 0 D 3 V ?b 2 » S G S -T H O M S O N b • SG TH S G S-THOMSON TS274C,I,M i[L[l U[E3 Q [RQ D © S T-19 -0 5 -Y0 HIGH SPEED QUAD CMOS OP-AMPs ■EX C ELLEN T PH A SE MARGIN ON CAPACI­ TIVE LOADS ■ SYM ETRICA L O UTPUT C U R REN TS ■ HIGH GAIN BANDWIDTH PRODUCT

ADM1810

Contextual Info: Microprocessor Reset Circuits ADM1810 to ADM1813/ADM1815 to ADM1818 FEATURES VCC RST VCC TOLERANCE BIAS 150ms DELAY GND GENERAL DESCRIPTION ADM1811/ADM1816 5.5kΩ RST VCC TOLERANCE BIAS 150ms DELAY GND VCC The ADM181x range of voltage monitoring circuits is used in

ADM1810

Abstract: ADM1811 ADM1812 ADM1813 ADM1815 ADM1816 ADM1817 ADM1818 transistor m5c transistor m6e
Contextual Info: Microprocessor Reset Circuits ADM1810 to ADM1813/ADM1815 to ADM1818 FEATURES VCC RST VCC TOLERANCE BIAS 150ms DELAY GND GENERAL DESCRIPTION ADM1811/ADM1816 5.5kΩ RST VCC TOLERANCE BIAS 150ms DELAY GND VCC The ADM181x range of voltage monitoring circuits is used in

Contextual Info: Microprocessor Reset Circuits ADM1810 to ADM1813/ADM1815 to ADM1818 FEATURES FUNCTIONAL BLOCK DIAGRAMS Reliable low cost voltage monitor with reset output Suitable for monitoring 2.5 V, 3 V, 3.3 V, and 5 V power supply voltages Reset threshold levels: 4.62 V, 4.35 V, 3.06 V, 2.88 V, 2.55 V,

ferrite 8d3

Abstract: M9M material Transistor 8c4 L5P12 105 m5e
Contextual Info: Ferrite Cores DR, THP P, TH Series For Audio-Visual, TV, & Radio Equipment MATERIAL CHARACTERISTICS Material Practical frequency Initial Relative loss permeability foctor µi tanδ/µi x10–6 MHz L6 0.01 to 0.5 1500±25% L6E 0.01 to 0.5 1200±25% L5 0.1 to 1.5

Q5BRID8X14X15H5

Abstract: l6r4h 104 m5e Q5BRID3X2X5H1.2 Q5BRHH
Contextual Info: Ferrite Cores RHH, R4H, RID, R Series For Audio-Visual, TV, & Radio Equipment For Balun Transformer/Choke Coil MATERIAL CHARACTERISTICS Practical Material frquency MHz Relative loss factor Initial permeability tanδ/µi µi x10–6 L6 0.01 to 0.5 1500±25%

Contextual Info: 45E D 712*1537 G03b744 S C S -T H O M S O N m 4 ISÛTH G S-THOMSON T S 2 7 2 C ,I,M -1 9 -0 5 -zo HIGH SPEED DUAL CMOS OP-AMPs • EXCELLENT PHASE MARGIN ON CAPACI­ TIVE LOADS - SYMETRICAL OUTPUT CURRENTS ■ HIGH GAIN BANDWIDTH PRODUCT ■ LOW OUTPUT DYNAMIC IMPEDANCE

transistor M7A

Abstract: 10 M7C m5c transistor M7A transistor 3.GND SOT-23 ADM1812-5ART-REEL m5c diode SOT R23 M6.B SOT-23 ADM1811
Contextual Info: Microprocessor Reset Circuits ADM1810–ADM1813/ADM1815–ADM1818 FEATURES Reliable Low Cost Voltage Monitor with Reset Output Suitable for Monitoring 2.5 V, 3 V, 3.3 V, and 5 V Power Supply Voltages Reset Threshold Levels: 4.62 V, 4.35 V, 3.06 V, 2.88 V,

M7A transistor

Abstract: transistor M7A transistor m5c 10 M7C 212 s sot-23 10 M7A ADM1818-5ART-REEL KS sot 23 ADM1815-R22ART-REEL7 ADM1811
Contextual Info: Microprocessor Reset Circuits ADM1810–ADM1813/ADM1815–ADM1818 FEATURES Reliable Low Cost Voltage Monitor with Reset Output Suitable for Monitoring 2.5 V, 3 V, 3.3 V, and 5 V Power Supply Voltages Reset Threshold Levels: 4.62 V, 4.35 V, 3.06 V, 2.88 V,

M7A transistor

Abstract: transistor M7A transistor m5c M5C SOT transistor m6e M76 switch ADM1818-5ART-REEL ADM1817 ADM1816 ADM1818
Contextual Info: Microprocessor Reset Circuits ADM1810-ADM1813/ADM1815-ADM1818 FEATURES Reliable low cost voltage monitor with reset output Suitable for monitoring 2.5 V, 3 V, 3.3 V, and 5 V power supply voltages Reset threshold levels: 4.62 V, 4.35 V, 3.06 V, 2.88 V, 2.55 V,

105 m5e

Abstract: 104 m5e M5E MARKING MA3ZD12
Contextual Info: Schottky Barrier Diodes SBD MA3ZD12 Silicon epitaxial planar type Unit : mm For high-speed switching circuits 2.1 ± 0.1 0.425 • Features 0.425 0.3 − 0 0.65 1.3 ± 0.1 1 0.65 2.0 ± 0.2 + 0.1 • S-mini type 3-pin package • Allowing to rectify under (IF(AV) = 700 mA) condition

Contextual Info: Schottky Barrier Diodes SBD MA3ZD12 Silicon epitaxial planar type Unit: mm For high speed switching 0.3+0.1 –0 0.15+0.1 –0.05 1 2 (0.65) (0.65) Unit VR 20 V VRRM 25 V IF(AV) 700 mA IFSM 2 A Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125

Contextual Info: MA3ZD12 Silicon epitaxial planar type For high-speed switching circuits Unit : mm 0.3+0.1 –0 • Features 0.15+0.1 –0.05 5˚ • S-mini type 3-pin package • Allowing to rectify under IF(AV = 700 mA) condition • Low forward rise voltage V F (V F < 0.45 V)

44C1000

Contextual Info: SAMSUNG ELECTRONICS INC 42E KM44C1000/L T> a 7^4142 001G2G4 - ^ 0 fflSflüK CMOS DRAM 1MX4 Bit CMOS Dynamic RAM with Fast Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 44C 1000/L is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 dynamic Random Access Memory.

Contextual Info: Optoway SPM-6100WG 1 * SPM-6100WG / SPM-6100BWG / SPM-6100AWG RoHS Compliant 16G FC / 850 nm Digital Diagnostic LC Multi-Mode SFP+ TRANSCEIVER

105 m5e

Abstract: MA3ZD12
Contextual Info: Schottky Barrier Diodes SBD MA3ZD12 Silicon epitaxial planar type Unit: mm For high speed switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Forward current (Average) IF(AV) = 700 mA rectification is possible • Low forward voltage: VF < 0.45 V • High-density mounting is possible

MA3ZD12

Abstract: 104 m5e
Contextual Info: Schottky Barrier Diodes SBD MA3ZD12 Silicon epitaxial planar type Unit : mm For high-speed switching circuits 2.1 ± 0.1 0.425 • Features 0.425 0.3 − 0 0.65 1.3 ± 0.1 1 0.65 2.0 ± 0.2 + 0.1 • S-mini type 3-pin package • Allowing to rectify under (IF(AV) = 700 mA) condition

104 m5e

Abstract: MA3ZD12
Contextual Info: Schottky Barrier Diodes SBD MA3ZD12 Silicon epitaxial planar type Unit: mm For high speed switching 0.3+0.1 –0 0.15+0.1 –0.05 1 2 (0.65) (0.65) 5° Rating Unit VR 20 V VRRM 25 V IF(AV) 700 mA IFSM 2 A Junction temperature Tj 125 °C Storage temperature

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3ZD12 Silicon epitaxial planar type Unit: mm For high speed switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Forward current (Average) I F(AV) = 700 mA rectification is

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3ZD12 Silicon epitaxial planar type Unit: mm For high speed switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Forward current (Average) I F(AV) = 700 mA rectification is

MA3ZD12

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3ZD12 Silicon epitaxial planar type Unit: mm For high speed switching 0.3+0.1 –0 0.15+0.1 –0.05 M Di ain sc te on na tin nc ue e/ d 3 1.25±0.1 2.1±0.1 • Features

marking code 105 m5e

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3ZD120G Silicon epitaxial planar type For high speed switching • Package ■ Features • Forward current (Average) I F(AV) = 700 mA rectification is possible

marking code 105 m5e

Abstract: MA3ZD120G MA3ZD120 marking code m5e
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3ZD120G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high speed switching • Package ■ Features ■ Absolute Maximum Ratings Ta = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3ZD12 Silicon epitaxial planar type Unit: mm For high speed switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ M Di ain sc te on na tin nc ue e/ d • Forward current (Average) I F(AV) = 700 mA rectification is