104 M5E Search Results

104 m5e

Abstract: 27000pF 104m5e
Contextual Info: Ceramic Axial-Lead Capacitors Small Body Style CA10 Series CHARACTERISTICS Item Characteristics X7R -55°C ~ +125°C NPO -55°C ~ +125°C Operating Temperature Range Working Voltage (WVDC) Capacitance Range Z5U -25°C ~ +85°C 50 (other voltages available upon special order, ask for details)

105 m5e

Abstract: 104 m5e M5E MARKING MA3ZD12
Contextual Info: Schottky Barrier Diodes SBD MA3ZD12 Silicon epitaxial planar type Unit : mm For high-speed switching circuits 2.1 ± 0.1 0.425 • Features 0.425 0.3 − 0 0.65 1.3 ± 0.1 1 0.65 2.0 ± 0.2 + 0.1 • S-mini type 3-pin package • Allowing to rectify under (IF(AV) = 700 mA) condition

Contextual Info: MA3ZD12 Silicon epitaxial planar type For high-speed switching circuits Unit : mm 0.3+0.1 –0 • Features 0.15+0.1 –0.05 5˚ • S-mini type 3-pin package • Allowing to rectify under IF(AV = 700 mA) condition • Low forward rise voltage V F (V F < 0.45 V)

Contextual Info: Schottky Barrier Diodes SBD MA3ZD12 Silicon epitaxial planar type Unit: mm For high speed switching 0.3+0.1 –0 0.15+0.1 –0.05 1 2 (0.65) (0.65) Unit VR 20 V VRRM 25 V IF(AV) 700 mA IFSM 2 A Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125

Contextual Info: Optoway SPM-6100WG 1 * SPM-6100WG / SPM-6100BWG / SPM-6100AWG RoHS Compliant 16G FC / 850 nm Digital Diagnostic LC Multi-Mode SFP+ TRANSCEIVER

105 m5e

Abstract: MA3ZD12
Contextual Info: Schottky Barrier Diodes SBD MA3ZD12 Silicon epitaxial planar type Unit: mm For high speed switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Forward current (Average) IF(AV) = 700 mA rectification is possible • Low forward voltage: VF < 0.45 V • High-density mounting is possible

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3ZD12 Silicon epitaxial planar type Unit: mm For high speed switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Forward current (Average) I F(AV) = 700 mA rectification is

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3ZD12 Silicon epitaxial planar type Unit: mm For high speed switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Forward current (Average) I F(AV) = 700 mA rectification is

MA3ZD12

Abstract: 104 m5e
Contextual Info: Schottky Barrier Diodes SBD MA3ZD12 Silicon epitaxial planar type Unit : mm For high-speed switching circuits 2.1 ± 0.1 0.425 • Features 0.425 0.3 − 0 0.65 1.3 ± 0.1 1 0.65 2.0 ± 0.2 + 0.1 • S-mini type 3-pin package • Allowing to rectify under (IF(AV) = 700 mA) condition

104 m5e

Abstract: MA3ZD12
Contextual Info: Schottky Barrier Diodes SBD MA3ZD12 Silicon epitaxial planar type Unit: mm For high speed switching 0.3+0.1 –0 0.15+0.1 –0.05 1 2 (0.65) (0.65) 5° Rating Unit VR 20 V VRRM 25 V IF(AV) 700 mA IFSM 2 A Junction temperature Tj 125 °C Storage temperature

marking code 105 m5e

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3ZD120G Silicon epitaxial planar type For high speed switching • Package ■ Features • Forward current (Average) I F(AV) = 700 mA rectification is possible

MA3ZD12

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3ZD12 Silicon epitaxial planar type Unit: mm For high speed switching 0.3+0.1 –0 0.15+0.1 –0.05 M Di ain sc te on na tin nc ue e/ d 3 1.25±0.1 2.1±0.1 • Features

Contextual Info: 45E D 712*1537 G03b744 S C S -T H O M S O N m 4 ISÛTH G S-THOMSON T S 2 7 2 C ,I,M -1 9 -0 5 -zo HIGH SPEED DUAL CMOS OP-AMPs • EXCELLENT PHASE MARGIN ON CAPACI­ TIVE LOADS - SYMETRICAL OUTPUT CURRENTS ■ HIGH GAIN BANDWIDTH PRODUCT ■ LOW OUTPUT DYNAMIC IMPEDANCE

marking code 105 m5e

Abstract: MA3ZD120G MA3ZD120 marking code m5e
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3ZD120G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high speed switching • Package ■ Features ■ Absolute Maximum Ratings Ta = 25°C

MA3ZD12

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3ZD12 Silicon epitaxial planar type Unit: mm For high speed switching 0.3+0.1 –0 0.15+0.1 –0.05 M Di ain sc te on na tin nc ue e/ d 3 1.25±0.1 2.1±0.1 • Features

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3ZD120G Silicon epitaxial planar type For high speed switching • Package • Code SMini3-F2 • Pin Name 1: Anode 2: N.C. 3: Cathode M Di ain sc te on na tin nc

marking code 105 m5e

Abstract: MA3ZD120G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3ZD120G Silicon epitaxial planar type For high speed switching • Package ■ Features • Code SMini3-F2 • Pin Name 1: Anode 2: N.C. 3: Cathode Th an W is k y

Modular Jacks

Abstract: RTL8211 88E6123 88E6061 88E6165 88E6121 Marvell 88e6061 RTL8212 marvell 88E6123 rtl8211 reference
Contextual Info: Integrated Magnetics Reference Guide - for Modular Jacks with Integrated Magnetic Components - GIGABIT: 10/100/1000 Mbit/s Vendor AGERE AGERE AGERE AGERE AGERE BROADCOM BROADCOM BROADCOM INTEL INTEL INTEL INTEL LSI MARVELL MARVELL MARVELL MARVELL MARVELL MARVELL

104 m5e

Contextual Info: MOSAIC SEMICONDUCTOR INC *4SE D m b B S B B ? 11 GOQOfl^ 1 M O C 32K X 8 EEPROM MEM832V/J-20/25 Issue 3.0: S ep tem b er 1991 Inc. Pin Definitions 32,768 x 8 CMOS EEPROM A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DO D1 D2 GND Features Fast Access Times of 200/250 ns.

IEC-60825

Abstract: E50U
Contextual Info: Optoway XPM-4100WG 1 * XPM-4100WG RoHS Compliant 8.5Gb/s 850 nm XFP Multi-Mode Optical Transceiver for 8G FC Applications

224 m5e

Abstract: IEC-60825
Contextual Info: Optoway XPM-4100WG 1 * XPM-4100WG / XPM-4100BWG / XPM-4100AWG RoHS Compliant 8.5Gb/s 850 nm XFP Multi-Mode Optical Transceiver for 8G FC Applications

M5E capacitor

Abstract: 224 M5E capacitor 105 M5E capacitor marking code 105 m5e CAP M5E CAP 105 M5E 104 K5C capacitor RPE2 cm capacitor m5e marking z5e capacitor
Contextual Info: C49E13.pdf 01.7.11 This is the PDF file of catalog No.C49E-13 Monolithic Ceramic Capacitors MONOLITHIC CERAMIC CAPACITORS Murata Manufacturing Co., Ltd. Cat.No.C49E-13 This is the PDF file of catalog No.C49E-13 C49E13.pdf 01.7.11 CONTENTS 1 Part Numbering

L4510

Contextual Info: July 1992 PRELIM IN A RY Micro Linear ML4510 5V Sensorless Spindle Motor Controller GENERAL DESCRIPTION The ML4510 provides complete commutation for delta or wye wound Brushless DC BLDC motors without the need for signals from Hall Effect sensors. This IC

105 M5E capacitor

Abstract: M5E capacitor C49E-13 104 z5f 104 m5e 224 M5E capacitor CAPACITOR 3300PF 105 100V AXIAL marking z5e capacitor CAP 105 M5E cm capacitor m5e
Contextual Info: Please read CAUTION and Notice in this catalog for safety. This catalog has only typical specifications. Therefore you are requested to approve our product specification or to transact the approval sheet for product specification, before your ordering. C49E13.pdf 01.7.11