104 CEV Search Results

Contextual Info: PIC24FJ16MC101/102 AND PIC24FJ32MC101/102/104 16-Bit Microcontrollers up to 32-Kbyte Flash and 2-Kbyte SRAM Operating Conditions Advanced Analog Features • 3.0V to 3.6V, -40ºC to +125ºC, DC to 16 MIPS • ADC module: - 10-bit, 1.1 Msps with four S&H

example dsPIC33fj16

Abstract: DSPIC33FJ16MC102 DS70191 DS70187 MPLAB PM3 circuit AD21b DS70192 DS70209 49 pin connector LCD
Contextual Info: dsPIC33FJ16 GP/MC 101/102 AND dsPIC33FJ32(GP/MC)101/102/104 16-Bit Digital Signal Controllers (up to 32-Kbyte Flash and 2-Kbyte SRAM) Operating Conditions Advanced Analog Features • 3.0V to 3.6V, -40ºC to +125ºC, DC to 16 MIPS • ADC module: - 10-bit, 1.1 Msps with four S&H

MC101

Contextual Info: dsPIC33FJ16 GP/MC 101/102 AND dsPIC33FJ32(GP/MC)101/102/104 16-Bit Digital Signal Controllers (up to 32-Kbyte Flash and 2-Kbyte SRAM) Operating Conditions Advanced Analog Features • 3.0V to 3.6V, -40°C to +125°C, DC to 16 MIPS • ADC module: - 10-bit, 1.1 Msps with four S&H

DS70207

Abstract: DS70203 MPLAB PM3 circuit induction MOTOR SPEED CONtrol pwm pic DSPIC33FJ16MC101 DS70655 DS70202 DS70194 example dsPIC33fj16 DS70644
Contextual Info: dsPIC33FJ16 GP/MC 101/102 AND dsPIC33FJ32(GP/MC)101/102/104 16-bit Digital Signal Controllers (up to 32 KB Flash and 2 KB SRAM) Operating Conditions Advanced Analog Features • 3.0V to 3.6V, -40ºC to +125ºC, DC to 16 MIPS • ADC module: - 10-bit, 1.1 Msps with four S&H

DS39699

Abstract: DS39711 DS39707 DS39703 DS39701 DS39715 DS39702 DS39697 PIC24F Family Reference Manual DS39696
Contextual Info: PIC24FJ16MC101/102 AND PIC24FJ32MC101/102/104 16-bit Microcontrollers up to 32 KB Flash and 2 KB SRAM Operating Conditions Advanced Analog Features • 3.0V to 3.6V, -40ºC to +125ºC, DC to 16 MIPS • ADC module: - 10-bit, 1.1 Msps with four S&H - Six analog inputs on 20-pin devices, eight analog

Contextual Info: KODENSHI CORP 2SE D PG-I04 3\ 5 —-tz 7 5 v - k -i t ts n m & y M$>7 W S242bDfl 0DQQ27S T • DIMENSIONS fc -tfc >*&fr-£hvtzm>m<nix. * h-tz > t x \ (Unit: mm 'M t * # & to The PG-104 surface mountable reflective sensor combines a GaAs IRED with a high-sensitivity photodarlington in a

Contextual Info: KODENSHI CORP 55E D S545tj0fl Q00DS73 5 SG-I04I3\ 5 - 4 2 7 5 y - K t S 5 J t 7 * h h 7 > y a * £ f f i * ^ b t t f c & ' J 'a c 7 > B [ DIMENSIONS T -W -1 3 (Unit: mm & f M 7 * M r > - ^ T \ K # ( t 7 ^ - 7 ^ ^ i| i| ( c ilJ ; ® T '# S f o The SG-104 surface mountable reflective sensor com bines a

CECC 32101

Abstract: 0805 cnc 331 MARKING CODE DE
Contextual Info: =Y lf exPage 9 rU e CeVoir / Se CERAMIC CHIP CAPACITORS CLASS 2 BASSE TENSION LOW VOLTAGE Format / Format 0403 0603 Modèle normalisé / Standard model 0402 CNC 19 CNC 19 A L W T max. a Conformes aux spécifications des normes CECC 32101 et NF C 93133 In accordance with the specifications of

93133

Contextual Info: =Y lf exPage 9 rU e CeVoir / Se L W T max. a Conformes aux spécifications des normes CECC 32101 et NF C 93133 In accordance with the specifications of CECC 32101 and NF C 93133 standards L T W a L, W, T, pour chips étamé option E, H ou T : + 0,5 mm L, W, T, for tinned chips (option E, H or T) : + 0,5 mm

12W MARKING sot23

Abstract: marking 12W SOT23 ZXTN2020F ZXTP2029F ZXTP2029FTA
Contextual Info: ZXTP2029F 100V, SOT23, PNP medium power transistor Summary V BR CEV > -130V, V(BR)CEO > -100V IC(cont) = -3A RCE(sat) = 45m⍀ typical VCE(sat) < -80mV @ -1A PD = 1.2W Complementary part number: ZXTN2020F Description Advanced process capability and package design have been used to

marking 12W SOT23

Abstract: ZXTN2020F ZXTN2020FTA ZXTP2029F plc lamp 12W MARKING sot23
Contextual Info: ZXTN2020F 100V, SOT23, NPN medium power transistor Summary V BR CEV > 160V, V(BR)CEO > 100V IC(cont) = 4A RCE(sat) = 30m⍀ typical VCE(sat) < 50mV @ 1A PD = 1.2W Complementary part number: ZXTP2029F Description Advanced process capability and package design have been used to

Contextual Info: ZXTN2020F 100V, SOT23, NPN medium power transistor Summary V BR CEV > 160V, V(BR)CEO > 100V IC(cont) = 4A RCE(sat) = 30m⍀ typical VCE(sat) < 50mV @ 1A PD = 1.2W Complementary part number: ZXTP2029F Description Advanced process capability and package design have been used to

marking 12W SOT23

Abstract: ZXTN2020F
Contextual Info: ZXTN2020F 100V, SOT23, NPN medium power transistor Summary V BR CEV > 160V, V(BR)CEO > 100V IC(cont) = 4A RCE(sat) = 30m⍀ typical VCE(sat) < 50mV @ 1A PD = 1.2W Complementary part number: ZXTP2029F Description Advanced process capability and package design have been used to

OUTLINE DIMENSIONS in inche

Abstract: marking 951 12W MARKING sot23 ZXTN2018F ZXTP2027F ZXTP2027FTA
Contextual Info: ZXTP2027F 60V, SOT23, PNP medium power transistor Summary V BR CEV > -100V, V(BR)CEO > -60V IC(cont) = -4A RCE(sat) = 31 m⍀ typical VCE(sat) < -60 mV @ -1A PD = 1.2W Complementary part number: ZXTN2018F Description Advanced process capability and package design have been used to

marking 322

Abstract: br 2222 npn
Contextual Info: ZXTN2031F 50V, SOT23, NPN medium power transistor Summary V BR CEV > 80V, V(BR)CEO > 50V IC(cont) = 5A RCE(sat) = 24m⍀ typical VCE(sat) < 40mV @ 1A PD = 1.2W Complementary part number: ZXTP2025F Description Advanced process capability and package design have been used to

Contextual Info: ZXTN2031F 50V, SOT23, NPN medium power transistor Summary V BR CEV > 80V, V(BR)CEO > 50V IC(cont) = 5A RCE(sat) = 24m⍀ typical VCE(sat) < 40mV @ 1A PD = 1.2W Complementary part number: ZXTP2025F Description Advanced process capability and package design have been used to

marking 12W SOT23

Abstract: 12W MARKING sot23 IB100mA Marking 853
Contextual Info: ZXTN2020F 100V, SOT23, NPN medium power transistor Summary V BR CEV > 160V, V(BR)CEO > 100V IC(cont) = 4A RCE(sat) = 30m⍀ typical VCE(sat) < 50mV @ 1A PD = 1.2W Complementary part number: ZXTP2029F Description Advanced process capability and package design have been used to

ZXTN2031FTA

Abstract: ZXTN2031F ZXTP2025F mosfet marking 12W
Contextual Info: ZXTN2031F 50V, SOT23, NPN medium power transistor Summary V BR CEV > 80V, V(BR)CEO > 50V IC(cont) = 5A RCE(sat) = 24m⍀ typical VCE(sat) < 40mV @ 1A PD = 1.2W Complementary part number: ZXTP2025F Description Advanced process capability and package design have been used to

marking 12W SOT23

Contextual Info: ZXTP2025F 50V, SOT23, PNP medium power transistor Summary V BR CEV > -50V, V(BR)CEO > -50V IC(cont) = -5A RCE(sat) = 30m⍀ typical VCE(sat) < - 60mV @ -1A PD = 1.2W Complementary part number: ZXTN2031F Description Advanced process capability and package design have been used to

TS16949

Abstract: ZXTN2020F ZXTP2029F ZXTP2029FTA
Contextual Info: ZXTP2029F 100V, SOT23, PNP medium power transistor Summary V BR CEV > -130V, V(BR)CEO > -100V IC(cont) = -3A RCE(sat) = 45m⍀ typical VCE(sat) < -80mV @ -1A PD = 1.2W Complementary part number ZXTN2020F Description C Advanced process capability and package design have been used to

Contextual Info: ZXTP2029F 100V, SOT23, PNP medium power transistor Summary V BR CEV > -130V, V(BR)CEO > -100V IC(cont) = -3A RCE(sat) = 45m⍀ typical VCE(sat) < -80mV @ -1A PD = 1.2W Complementary part number ZXTN2020F Description C Advanced process capability and package design have been used to

Contextual Info: ZXTP2027F 60V, SOT23, PNP medium power transistor Summary V BR CEV > -100V, V(BR)CEO > -60V IC(cont) = -4A RCE(sat) = 31 m⍀ typical VCE(sat) < -60 mV @ -1A PD = 1.2W Complementary part number ZXTN2018F Description C Advanced process capability and package design have been used to

TS16949

Abstract: ZXTN2018F ZXTP2027F ZXTP2027FTA
Contextual Info: ZXTP2027F 60V, SOT23, PNP medium power transistor Summary V BR CEV > -100V, V(BR)CEO > -60V IC(cont) = -4A RCE(sat) = 31 m⍀ typical VCE(sat) < -60 mV @ -1A PD = 1.2W Complementary part number ZXTN2018F Description C Advanced process capability and package design have been used to

Contextual Info: 9 =W S age P H Ro oir / See CONDENSATEURS CERAMIQUE MONOCOUCHES SINGLE LAYER CERAMIC CAPACITORS V Tangente ␦ et facteur Q Tangent ␦ and Q factor A Hyperfréquence K⍜ = 100 ± 30 ppm / °C Q à / to 1 MHz у 10000 B Classe 1 NPO K⍜ = 0 ± 30 ppm / °C