1027 DIODE Search Results

Contextual Info: DCS/PCN-1027 DIODES INC PRODUCT CHANGE NOTICE Contact Date: Implementation Date: March 7, 2003 Immediate Alert Category: Alert Type: Discrete Semiconductor PCN #: Specification Change PCN #:2003-1027 TITLE Electrical Characteristic Rating Corrections – VF, Tj, Tstg

BD 130 Y transistor

Contextual Info: M 8Ï5U M 8 System Reset with battery back-up MM 1027, 1081 : Monolithic IC MM 1027, 1081 These ICs were developed for STATIC-RAM (S-RAM) battery back-up, and have built-in switching circuit for main power supply and battery, back-up timing circuit and battery checker.

SAA1027

Abstract: stepper motor driver IC IC 7017 Unit COUNTER 12v dc motor saa1027 bipolar Stepping Motor Driver 4-phase BIPOLAR STEPPER MOTOR 12v 350mA Stepper Motor 12V BIPOLAR STEPPER MOTOR transistors 18V and 500mA 12v stepper motor 1027
Contextual Info: Issued March 1997 232-2699 Data Pack J Data Sheet Stepper motor driver IC SAA 1027 RS stock number 300-237 The RS SAA1027 is a bipolar integrated circuit intended for driving a 4-phase two stator stepper motor. The circuit consists of a bidirectional 4-state counter and a

IC 7017 Unit COUNTER

Abstract: SAA1027 SAA 1027 4-phase BIPOLAR STEPPER MOTOR 12v 350mA Stepper Motor
Contextual Info: Issued March 1987 005-566 Data Pack J Data Sheet Stepper motor driver IC SAA 1027 RS stock number 300-237 The RS SAA1027 is a bipolar integrated circuit intended for driving a 4-phase two stator stepper motor. The circuit consists of a bidirectional 4-state counter and a

TH3L10

Abstract: TK3L10 TH5P4 transistor d 1795 417 TRANSISTOR zener diode 1283
Contextual Info: Darlington T ra n sisto rs Darlington Transistors Bipolartransistors Part l\lo. EIAJ No. Absolute Maximum Ratings VCBO VCEO V ebo lc Ib Pt [V] [V] [V] [A] [A] [W] 100 200 100 100 200 VCEO min 2SD1022 1023 1024 1025 1026 1027 200 200 100 200 200 1349 500

transistor K75

Contextual Info: • 1,24=1027 □ O m 'ìb M 425 ■ M IT 3 M ITSUBISHI BIPOLAR DIGITAL ICs M54515P MITSUBISHI DGTL LOGIC 7-UNIT 16mA TRANSISTOR ARRAY DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M54515P, transistor array, consists o f seven NPN tran­ sistors and is connected in a common-emitter configuration.

TH3L10

Abstract: TH3L10 ic TK3L10 T7K40 T15J10 TP10K40 3J10 3L10Z 5L20 2SB1282
Contextual Info: POWER TRANSISTORS asnas? 3 EE J> — » ti Ä ± SÉ fé Absolute Maximum Ratings Vceo V ceo V ebo Type No. [V] [V] 2SD1022 T5L10 I00 100 1023 20 200 200 1024 T 8L10 I00 I00 1025 20 200 200 1026 T 15 L1 0 I00 I00 1027 20 200 200 1349 T 7K40 500 400 2SD1788

sn1027

Abstract: c 1027 transistor LT1798 LT1021-5 LT1027 LT1027ACH-5 LT1027BCH-5 LT1027CCH-5 LT1027DCH-5 LTC1290
Contextual Info: LT1027 Precision 5V Reference U FEATURES • ■ ■ ■ ■ ■ ■ DESCRIPTIO Very Low Drift: 2ppm/°C Max TC Pin Compatible with LT1021-5, REF-02, PDIP Package Output Sources 15mA, Sinks 10mA Excellent Transient Response Suitable for A-to-D Reference Inputs

1027c5

Abstract: LT1798 1027E5 LT1027BCN8-5 LT1021-5 LT1027 LT1027ACH-5 LT1027BCH-5 LT1027CCH-5 LT1027DCH-5
Contextual Info: LT1027 Precision 5V Reference U FEATURES • ■ ■ ■ ■ ■ ■ DESCRIPTIO Very Low Drift: 2ppm/°C Max TC Pin Compatible with LT1021-5, REF-02, TO-5 and PDIP Packages Only Output Sources 15mA, Sinks 10mA Excellent Transient Response Suitable for A-to-D Reference Inputs

Contextual Info: LT1027 Precision 5V Reference U FEATURES • ■ ■ ■ ■ ■ ■ DESCRIPTIO Very Low Drift: 2ppm/°C Max TC Pin Compatible with LT1021-5, REF-02, PDIP Package Output Sources 15mA, Sinks 10mA Excellent Transient Response Suitable for A-to-D Reference Inputs

LT1021-5

Abstract: LT1027 LT1027ACH-5 LT1027BCH-5 LT1027C LT1027M LTC1290 REF-02 1027E5
Contextual Info: LT1027 Precision 5V Reference U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ The LT 1027 is a precision reference with extra-low drift, superior accuracy, excellent line and load regulation and low output impedance at high frequency. This device is intended for use in 12- to 16-bit A-to-D and D-to-A

c 1027 transistor

Abstract: TRANSISTOR RF 1049 Power-Amplifier R1075
Contextual Info: _ W ire le s s /R F P ro d u c ts Wireless/RF Products. Product T a b le . 10-2 MAX2102 Direct-Conversion Tuner IC for Digital DBS

FMBBAV99

Contextual Info: FMBBAV99 200 mW EPITAXIAL PLANAR DIODES Data Sheet Mechanical Dimensions Description .110 .060 Pin 2 Pin 1 .037 .115 .037 Pin 3 .016 2 3 1 .043 .016 .004 Features n PLANAR PROCESS n INDUSTRY STANDARD SOT-23 PACKAGE n 200 mW POWER DISSIPATION n MEETS UL SPECIFICATION 94V-0

SMB28

Abstract: SMB21 SMB210 SMB22 SMB24 SMB26
Contextual Info: 2.0 Amp SURFACE MOUNT PLASTIC SILICON DIODES Data Sheet Mechanical Dimensions SMB21 . . . 210 Series Description DO-214AA SMB Features n LOW COST n LOW FORWARD VOLTAGE WITH LOW LEAKAGE CURRENT n HIGH CURRENT CAPABILITY n MEETS UL SPECIFICATION 94V-0 n HIGH SURGE CAPABILITY

985-117

Abstract: PD 1515 2322 644 D1029N D2209N D660N D748N
Contextual Info: M6 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 460 V 2200 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C]

lm 4011

Abstract: 1N3595US-1 1N3595US diode 1N3595 1N3595US1 JAN 1N3595 1N3595 D-5D 1N3595-1 1N3595UR-1 D0-35
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 August 2000. INCH-POUND MIL-PRF-19500/241H 1 May 2000 SUPERSEDING MIL-PRF-19500/241G 7 April 1997 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEAKAGE, CONTROLLED FORWARD VOLTAGE

TOSHIBA el suffix

Abstract: Reel Taping Specification JEDEC toshiba tape and reel
Contextual Info: TOSHIBA TC74LCX14F/FN/FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74LCX14F, TC74LCX14FN, TC74LCX14FT LOW VOLTAGE HEX SCHMITT INVERTER WITH 5V TOLERANT INPUTS AND OUTPUTS The TC74LCX14 is a high perform ance CMOS SCHMITT N o te The JEDEC SOP (FN) is n o t

Contextual Info: 200 mW EPITAXIAL PLANAR DIODES D ata Sheet Semiconductor Description Mechanical Dimensions Pin 3 PlnlNC Pin 2 Features • INDUSTRY STANDARD SOT-23 PACKAGE ■ M EETS UL SPECIFICATION 94V-0 ■ PLANAR PRO CESS ■ 200 mW POWER DISSIPATION E le c t r ic a l C h a r a c t e r is t ic s

TOSHIBA el suffix

Abstract: TOSHIBA 0 el suffix
Contextual Info: TOSHIBA T C74LCX574F/FW/FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74LCX574F, TC74LCX574FW, TC74LCX574FT LOW VOLTAGE OCTAL D-TYPE FLIP-FLOP WITH 5V TOLERANT INPUTS AND OUTPUTS The TC74LCX574 is a high parform ance CMOS OCTAL D- Note The JEDEC SOP (FW) is not

TOSHIBA el suffix

Abstract: TOSHIBA TSSOP 50 PIN DIMENSION
Contextual Info: TOSHIBA T C 74V C X 16244FT TO SHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VCX1 6 24 4 FT LOW-VOLTAGE 16-BIT BUS BUFFER WITH 3.6 V TOLERANT INPUTS AND OUTPUTS The TC74VCX16244FT is a high performance CMOS 16-bit BUS BUFFER. Designed for use in 1.8, 2.5 or 3.3 Volt

diode LN 4001

Abstract: HPND-4050TXV HPND4050
Contextual Info: HEWLETT-PACKARD-. CMP NT S EGE D C l 44475A4 0005723 LOW LOSS BEAM LEAD PIN DIODES ÉfyCvrl H E W L E T T PACKARD 4 E3 HPNQ-4001 HPND-4001TXV HPND-4050 HPND-4050TXV Features 725 29 600(23) LOW SER IES RESISTANCE 1.30 Typical LOW CAPACITANCE 0.07 pF Typical

4N23

Contextual Info: 4N22A, 4N23A, 4N24A OPTOCOUPLERS D 3 0 5 5 , AUGUST 1987 JEDEC REGISTERED DEVICES GALLIUM ARSENIDE DIODE INFRARED SOURCE OPTICALLY COUPLED TO A HIGH-GAIN N-P-N SILICON PHOTOTRANSISTOR • Both Input and Output Circuits Are Isolated from the Can • JAN, JAN TX, JAN TXV Versions Available

Contextual Info: HEWLETT-PACKARDn CMPNTS 2GE D B 4447SÔ4 QDQS?2b BEAM LEAD PIN DIODE fZ Z J l H E W L E T T X '& J P A C K A R D T Q HPND-4005 HPND-4005TXV T " " 0'I'-1s~ Features HIGH BREAKDOWN VOLTAGE 120V Typical LOW CAPACITANCE 0.017 pF Typical LOW RESISTANCE 4.70 Typical

74ACT11027

Contextual Info: Signetïcs 74AC/ACT11027 Triple 3-Input NOR Gate P roduct Specification ACL Products GENERAL INFORMATION FEATURES • Output capability: ±24 mA • CMOS AC and TTL (ACT) voltage level inputs SYM BOL C O N D IT IO N S = 25°C; G ND = 0V; VCC = 5 0V • 50Q incident wave switching