1026 MOSFET Search Results

Contextual Info: Application Note 1026 Some Application Hints for AP3406 Prepared by Yuan Shan Shan System Engineering Dept. 1. Introduction This IC is available in TSOT-23-5 and SOT-23-5 packages. The AP3406 is a 1.1MHz fixed frequency, current mode, PWM synchronous buck step-down DC-DC

AP3406

Abstract: AP3406-ADJ step-down sot-23-5 input DSA00514
Contextual Info: Application Note 1026 Some Application Hints for AP3406 Prepared by Yuan Shan Shan System Engineering Dept. 1. Introduction This IC is available in TSOT-23-5 and SOT-23-5 packages. The AP3406 is a 1.1MHz fixed frequency, current mode, PWM synchronous buck step-down DC-DC

DDR4 "application note"

Abstract: LTC3876 dual tracking linear power supply
Contextual Info: Dual DC/DC Controller for DDR Power with Differential VDDQ Sensing and ±50mA VT T Reference Design Note 1026 Ding Li Introduction The LTC 3876 is a complete DDR power solution, compatible with DDR1, DDR2, DDR3 and DDR4 lower voltage standards. The IC includes VDDQ and V TT DC/

SS550

Abstract: 948S
Contextual Info: ON Semiconductor Selector Guide − Power MOSFET Products MOSFET − Surface Mount 2.5 V/2.7 V* 1.8 V QT Typ nC @ VGS = 4.5 V (5.0 V)/10 V* 0.052 0.072 0.12 12 −3.7 0.96 0.085 0.12 0.21 7.5 −3.2 0.20 0.35 −1.3 −1.0 RDS(on) Max (W) @ VGS = VDSS (V)

Contextual Info: HT0740 Advanced Information High Voltage Isolated MOSFET Driver Ordering Information Package Options 8-Pin Narrow Body SOIC 8-Pin Plastic DIP HT0740LG HT0740N4 Features General Description □ ±400V input to output isolation □ No external voltage supply required

Contextual Info: Toroidal Gate Drive Transformers • Deliver MOSFET / IGBT gate power and timing signals simultaneously · Directly drive high-side MOSFETs / IGBTs on busses up to 400V · Excellent risetime, overshoot, and peak current characteristics · >8 mm minimum creepage and clearance from

HT0740N4

Abstract: HT07 narrow so 400v input power supply Isolated Driver
Contextual Info: BACK HT0740 Advanced Information High Voltage Isolated MOSFET Driver Ordering Information Package Options 8-Pin Narrow Body SOIC 8-Pin Plastic DIP HT0740LG HT0740N4 Features General Description ±400V input to output isolation The Supertex HT07 is a single high voltage low input current

pin diagram of MOSFET

Abstract: power supply 400v circuit diagram circuit diagram of mosfet switches mosfet driver 400v "MOSFET Driver" AUDIO DELAY CIRCUIT DIAGRAM HT0740 HT0740LG HT0740N4 1026 soic-8
Contextual Info: HT0740 Advanced Information High Voltage Isolated MOSFET Driver Ordering Information Package Options 8-Pin Narrow Body SOIC 8-Pin Plastic DIP HT0740LG HT0740N4 Features General Description ±400V input to output isolation The Supertex HT07 is a single high voltage low input current

Contextual Info: HT0740 Advanced Information High Voltage Isolated MOSFET Driver Ordering Information Package Options 8-Pin Narrow Body SOIC 8-Pin Plastic DIP HT0740LG HT0740N4 Features General Description □ +400V input to output isolation □ No external voltage supply required

marking code g2s

Contextual Info: SIEMENS < *,0 0 5 S Silicon N-Channel MOSFET Tetrode •For low-noise, high gain-controlled input stages up to 1GH; ■Operating voltage 5V 1Integrated stabilized bias network X AGC o HF oIn p u t JX-Ih D ra in G2 I HF O u tp u t + DC G1 1 — r GND ESD: Electrostatic discharge sensitive device, observe handling precaution!

mosfet 1026

Abstract: 1026 mosfet
Contextual Info: ERFS440A Advanced Power MOSFET FEATURES BVdss = 500 V • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 pA M ax. @ VOS= 500V

diac advantageS AND DISADVANTAGES

Contextual Info: AN10961 Dimmable CFL using the UBA2027X family Rev. 2 — 8 June 2012 Application note Document information Info Content Keywords CFL, Triac dimmable, UBA2027X Abstract This application note describes the design of a dimmable Compact Fluorescent Lamp CFL with low dimming level using the UBA2027X.

IRFP460

Abstract: IRFP460 IR diode sg 89a international rectifier NE 22 dioda rectifier
Contextual Info: PD-9.512B International S Rectifier IRFP460 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements V dss - 5 0 0 V R DS on = 0 . 2 7 0

1RFP460

Abstract: irfp460 i IRFP460
Contextual Info: PD-9.512B International S ü R e ctifie r IRFP460 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 500V R DS on = 0 - 2 7 0

Contextual Info: 50V N-ch MOSFET EKV550 January. 2006 Package—TO-220 Features • Low on-resistance • Avalanche energy capability guaranteed • Built-in Gate protection diode against electrostatic discharge ESD Applications • DC-DC Converters • High speed switching

Contextual Info: MOSFET FKP252 December. 2005 Package-TO220F Features • Low on-resistance • Low input capacitance • Avalanche energy capability guaranteed Applications • PDP driving • High speed switching Equivalent circuit D 2 G (1) S (3) Absolute maximum ratings

Contextual Info: 60V N -ch MOSFET 2SK3711 December 2005 Package—TO3P Features • Low on-resistance • Built-in gate protection diode • Avalanche energy capability guaranteed Applications • Electric power steering • High current switching Equivalent circuit D 2

Contextual Info: User Guide 020 ISL8117EVAL2Z Evaluation Board User Guide Description Key Features The ISL8117EVAL2Z evaluation board shown in Figure 1 features the ISL8117. The ISL8117 is a 60V high voltage synchronous buck controller that offers external soft-start, independent enable functions and integrates UV/OV/OC/OT

Contextual Info: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA200N055T2-7 VDSS ID25 = 55V = 200A Ω ≤ 4.2mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ

Contextual Info: TrenchT2TM Power MOSFET VDSS ID25 IXTA200N055T2 IXTP200N055T2 = 55V = 200A Ω ≤ 4.2mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 G Symbol Test Conditions VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 55 V VGSM Transient

DC converter 50A

Abstract: N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V IXTP200N055T2 IXTA200N055T2
Contextual Info: TrenchT2TM Power MOSFET IXTA200N055T2 IXTP200N055T2 VDSS ID25 = 55V = 200A Ω ≤ 4.2mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ

Contextual Info: NTTD1P02R2 Power MOSFET -1.45 Amps, -20 Volts P−Channel Enhancement Mode Dual Micro8 Package Features • • • • • • http://onsemi.com Ultra Low RDS on Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Dual Micro8 Surface Mount Package

intersil jfet

Abstract: RFP15N15
Contextual Info: A Spice-2 Subcircuit Representation For Power MOSFETs Using Empirical Methods Application Note October 1999 AN9209.2 Abstract Discussion An accurate power-MOSFET model is not widely available for CAD circuit simulation. This work provides a subcircuit model which is compatible with SPICE-2 software and

IXTA200N055T2-7

Abstract: IXTA200N055T2 200N055
Contextual Info: Preliminary Technical Information IXTA200N055T2-7 TrenchT2TM Power MOSFET VDSS ID25 = 55V = 200A Ω ≤ 4.2mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ