1024X8 PROM Search Results

Contextual Info: Am27S35/Am27S37 8,192-Bit 1024x8 Bipolar Registered PROM with Programmable INITIALIZE Input Versatile programmable asynchronous or synchronous enable for simplified word expansion Buffered common INITIALIZE input either asynchronous (Am27S35) or synchronous (Am27S37)

64X128

Abstract: 53RS881 53RS881A 63RS881 63RS881A 1024X8
Contextual Info: 53/63RS881/A Advanced Micro Devices High Performance 1024x8 Registered PROM FEATURES/BENEFITS APPLICATIONS • Edge triggered “D" registers • Microprogram control store • Synchronous and asynchronous enables • State sequencers • Versatile 1:16 initialization words

27S181

Contextual Info: Am27Sl80/27S181/PS181 Am27S280/27S281/PS281 8,192-Bit 1024x8 Bipolar PROM > 3 DISTINCTIVE CHARACTERISTICS • • Fast access time allows high system speed 50% power savings on deselected parts — enhances reliability through total system heat reduction

82S181/BJA

Abstract: 82S181 1024x8 PROM
Contextual Info: Philips Semiconductors Military Bipolar Memory Products Product specification 8K-bit TTL bipolar PROM 1024x8 82S181 FEATURES DESCRIPTION • Address access time: 90ns max • Input loading: -150µA max • On-chip address decoding • Four chip enable inputs

Contextual Info: a 53/63S881/A Advanced Micro Devices High Performance 1024x8 PROM TiW PROM Family FEATURES/BENEFITS APPLICATIONS • 30-ns maximum access time • Microprogram control store • Reliable titanium-tungsten fuses TIW guaran­ tee greater than 98% programming yields

63S081

Contextual Info: £1 Advanced Micro Devices 53/63S881/A High Performance 1024x8 PROM TiW PROM Family FEATURES/BENEFITS APPLICATIONS • 30-ns maximum access time • Microprogram control store • Reliable iltanlum-tungsten fuses TIW guaran­ tee greater than 98% programming yields

AM27S35

Abstract: AM27S35A CD3024 PD3024 1024x8 PROM
Contextual Info: Am27S35/S35A/Am27S37/S37A _ „ Advanced Micro Devices 8,192-Bit 1024x8 Bipolar Registered PROM with Programmable INITIALIZE Input DISTINCTIVE CHARACTERISTICS • • Slim, 24-pin, 300-mil lateral center package occupies approximately 1/3 the board space required by standard

AM27S35

Contextual Info: Am27S35/Am27S37 8,192-Bit 1024x8 Bipolar Registered PROM with Programmable INITIALIZE Input > 3 DISTINCTIVE CHARACTERISTICS Slim, 24-pin, 300-mil lateral center package occupies approximately 1 /3 the board space required by standard discrete PROM and register

723CL

Abstract: AM27S281PC 27s181 AM27S181 27S181A AM27S181PC AM27S181A 27S281
Contextual Info: Am27S181 /27S181A Am27S281 /27S281A 8,192-Bit 1024x8 Bipolar PROM Devices DISTINCTIVE CHARACTERISTICS • Fast access time allows high system speed • 50% power savings on deselected parts — enhances reliability through total system heat reduction • Platinum-Silicide fuses guarantee high reliability, fast

53S881

Abstract: 53S881A 63S881 63S881A 1024x8 PROM MEQ1 e2723
Contextual Info: a 53/63S881/A Advanced Micro Devices High Performance 1024x8 PROM TiW PROM Family FEATURES/BENEFITS APPLICATIONS • 30-ns maximum access time • Reliable titanium-iungsten fuses TIW guaran­ tee greater than 98% programming yields • Low voltage generic programming

1024x8 PROM

Contextual Info: 53/63RS881/A Advanced Micro Devices High Performance 1024x8 Registered PROM FEATURES/BENEFITS APPLICATIONS • Edge triggered “D” registers • Microprogram control store • Synchronous and asynchronous enables • State sequencers • Versatile 1:16 Initialization words

AM27S181

Abstract: 27s181 27s181a AM27S181/BJA AM27S181A CERAMIC LEADLESS CHIP CARRIER LCC 24 AM27S181PC
Contextual Info: Am27S181/27S181A Am27S281/27S281A 8,192-Bit 1024x8 Bipolar PROM Devices DISTINCTIVE CHARACTERISTICS • Fast access time allows high system speed • 50% power savings on deselected parts — enhances reliability through total system heat reduction • Platinum-Silicide fuses guarantee high reliability, fast

82S181A

Abstract: 82S181A/B3A
Contextual Info: Philips Semiconductors Military Bipolar Memory Products Product specification 8K-bit TTL bipolar PROM 1024x8 82S181A FEATURES DESCRIPTION • Address access time: 55ns max • Input loading: -150µA max • On-chip address decoding • Four chip enable inputs

AM27S181

Abstract: 27S181
Contextual Info: Am27S181 /27S181A Am27S281 /27S281A Advanced Micro Devices 8,192-Bit 1024x8 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • Platinum-Silicide fuses guarantee high reliability, fast programming and exceptionally high programming yields (typ > 98%) Rapid recovery from power-down state provides mini­

53S881A

Abstract: 1024X8 53S881 63S881 63S881A 1024x8 PROM CD 024
Contextual Info: a 53/63S881/A Advanced Micro Devices High Performance 1024x8 PROM TiW PROM Family FEATURES/BENEFITS APPLICATIONS • 30-ns maximum access time • Reliable titanium-iungsten fuses TIW guaran­ tee greater than 98% programming yields • Low voltage generic programming

1024x8 PROM

Contextual Info: c, MmoHMb m Memories High Performance 1024x8 PROM 5 3 /6 3 S 8 8 0 5 3 /6 3 S 8 8 1 5 3 /6 3 S 8 8 1 A / / / / / / / / / ////////////////////////////////////A DVA NCE INFORMATION Features/ Benefits Applications • 8192-blt memory • Microprogram control stores

5218 chip ic

Abstract: 53S881F
Contextual Info: ADV M IC R O 14‘ E D I MEMORY 0257555 0027871 a 2 5 53/63S881/A Advanced Micro Devices High Performance 1024x8 PROM TiW PROM Family FEATURES/BENEFITS T APPLICATIONS • 30-ns maximum access time • Microprogram control store • Reliable tltanlum-tungsten fuses TiW guaran­

63S881

Abstract: 53S881 53S881A 63S881A 1024x8 PROM
Contextual Info: High Performance 1 0 2 4 x 8 PROM TiW PROM Family 5 3 /6 3 S 8 8 1 5 3 /6 3 S 8 8 1 A Features/Benefits Description • 30-ns maximum access time The 53/63S881 and 53/63S881A are 1024x8 bipolar PROMs featuring low inpu t current PNP inputs, full S chottky clam ping,

27S181

Abstract: Am27S181/27S181
Contextual Info: A m a 2 7 S 1 8 1 /2 7 S 1 8 1 A A m 2 7 S 2 8 1 Advanced Micro Devices /2 7 S 2 8 1 A 8,192-Bit 1024x8 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • Fast access time allows high system speed 50% power savings on deselected parts — enhances reliability through total system heat reduction

53RS881

Abstract: 53RS881A 63RS881 63RS881A SDS S3 5V
Contextual Info: 5 3 /6 3 R S 8 8 1 5 3 /6 3 R S 8 8 1 A High Performance 1024x8 Registered PROM Features/Benefits Description » Edge triggered “D” registers The 53/63RS881 and 53/63RS881A are 1Kx8 PROMs w ith onchip “ D” type registers, versatile o u tp u t enable con trol through

6341 prom

Abstract: MMI 6309 Monolithic Memories 5309-1 MMI 6349 mmi 6308 mmi 5349-1 MONOLITHIC MEMORIES PROM MMI 6341-1 kontron mpp 6308 prom
Contextual Info: Generic NiCR PROM Family 5 3 /6 3 X X -1 5 3 /6 3 X X - 2 Features/Benefits Description • From 2048-bit to 8192-bit memory The 53/63XX series generic PROM family offers a wide selection of size and organizations. The 8-bit wide PROMs range from 256x8 to 1024x8 in a wide selection of package sizes including the

MMI 6309

Abstract: mmi 5349-1 MMI 63xx 6309-1 mmi 6349-1 6308 prom 6341 prom
Contextual Info: Generic NiCR PROM Fam ily 5 3 /6 3 X X -1 5 3 /6 3 X X -2 Features/Benefits Description • From 2048-bit to 8192-bit memory The 53/63XX series generic PROM fam ily offers a wide selection of size and organizations. The 8-bit wide PROMs range from 256x8 to 1024x8 in a wide selection of package sizes including the

AM2130

Contextual Info: A m 2 1 3 0 /A m 2 1 4 0 A d va^ 1024x8 Dual-Port Static Random-Access Memories Devices D ISTIN CTIVE CHARACTERISTICS True dual port operation Access time as fast as 55 ns Master device Am2130 has on-chip arbitration Expandable data bus width in multiples of 8 bits using

Contextual Info: High Performance 10 24x8 PROM TiW PROM Family 5 3 /6 3 S 8 8 1 5 3 /6 3 S 8 8 1 A Featu res/B en efits Description • 30-ns m aximum access time T h e 53/63S881 a nd 5 3/63S 881A are 1024x8 b ip o la r P R O M s fe a tu rin g lo w in p u t c u rre n t PNP in p u ts , fu ll S c h o ttk y c la m p in g ,