1024X4 BIT RAM Search Results

S2114

Abstract: S211 2114L 2114 static ram RAM 2114 vmos S2114-1 S2114-2 S2114-3 S2114A-1
Contextual Info: AMI S 2114 40 96 BIT 1024x4 STATIC V M O S RAM Features G eneral D escription □ High Speed Operation: Access Time: 150ns Maximum (-1 ) The AMI S2114 is a 4096 bit fully static RAM organ­ ized as 1024 words by 4 bits. The device is fully TTL compatible on all inputs and outputs and has a single

K15S

Contextual Info: in t e i M2114A 1024x4 BIT STATIC RAM Military M2114AL-3 M2114AL-4 M2114A-4 M2114AL-5 Max. Access Time ns 150 200 200 250 Max. Current (mA) 50 50 70 70 HMOS Technology Directly TTL Compatible: All Inputs and Outputs Low Power, High Speed Common Data Input and Output Using

Contextual Info: •> GOULD AM I Semiconductors Preliminary Data Sheet S6514 4096 BIT 1024x4 STATIC CMOS RAM Sep te m be r 1984 Features General Description □ □ □ □ □ □ □ □ The S 6 5 1 4 is a 4096 bit static C M O S R A M organized a s 1024 w o rd s by 4 bits per word. The device offers low

MA5114

Abstract: a8415
Contextual Info: MA5114 MA5114 Radiation hard 1024x4 Bit Static RAM Replaces January 2000 version, DS3591-5.0 DS3591-5.1 July 2002 The MA5114 4k Static RAM is configured as 1024 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The design uses a 6 transistor cell and has full static operation with

MA5114

Abstract: 17-18L
Contextual Info: MA5114 MA5114 Radiation hard 1024x4 Bit Static RAM Replaces January 2000 version, DS3591-5.0 DS3591-5.1 July 2002 The MA5114 4k Static RAM is configured as 1024 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The design uses a 6 transistor cell and has full static operation with

Contextual Info: MM2114/MM2114L Family 4096-Bit 1024x4 Static RAMs Maximum Access/Current MM211415L MM21142L MM211425L MM21143L MM2114L MM211415 MM2114* 2 MM211425 150 2 00 250 300 4 50 150 200 250 300 450 70 70 70 70 70 100 100 100 100 100 A c c e s s (T A V Q V - n s )

Contextual Info: G E C P L E S S E Y «Asm S h M I < O \ I I ] ( ) K s Radiation Hard 1024x4 Bit Static RAM S10306FD S Issue 1.4 O cto ber 1990 Features A3 A4 Ai Ab A# AU • 3}im CMOS-SOS technology • Latch-up free • Fast access time 90ns typical • Total dose 10s rad (Si)

MA5114

Abstract: DS3591-4
Contextual Info: MA5114 MA5114 Radiation hard 1024x4 Bit Static RAM Replaces June 1999 version, DS3591-4.0 DS3591-5.0 January 2000 The MA5114 4k Static RAM is configured as 1024 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The design uses a 6 transistor cell and has full static operation with

1024X4

Abstract: S2114H
Contextual Info: Im v w ADVANCED PRODUCT DESCRIPTION AI/rmlM S2114H 4 0 9 6 BIT 1024x4 HIGH SPEED STATIC VMOS RAM Features General Description □ High Speed O peration: Access T im e: 70ns M axim um □ High D ensity 18 Pin Package □ S in g le +5 V olt Pow er Supply

2114 static ram

Abstract: ic 2114 RAM 2114 ci 2114 memory ic 2114 2114 2114 ram 2114 static ram ic memory 2114 P2114
Contextual Info: 2114 4096 Bit 1024x4 NMOS Static RAM Ö M Ü f^ D IL FEATURES D E S C R IP T IO N • • • • • • • • The 2114 is a 4096-bit s ta tic R andom A cce ss M em ory organized 1024 w ord s x 4 bits. The s to ra g e c e lls and decode and co n tro l c irc u itry are c o m p le te ly s ta tic , th e re fo re no

10074A

Abstract: 1024X4 10474 10474AF 10474F
Contextual Info: BIPOLAR MEMORY DIVISION MAY 1982 4096-BIT ECL RAM 1024x4 10474/10474A Preview DESCRIPTION FEATURES The 10474/10474A device is a 1024 w o rd s by 4 b its fu lly deco d e d R ea d /W rite Ran­ d om A cce ss M em ory, d e sig n e d fo r high speed scra tch pad, co n tro l and b u ffe r s to r­

16kx8 ram

Abstract: 8096 microcontroller features rom 1024 1024x8 MSM6411B 8096 microcontroller serial ports MSC62408 MSC6458 NS400N seg lcd driver rom 512x4
Contextual Info: • LINE-UP AND TYPICAL CHARACTERISTICS •- LINE-UP AND TYPICAL CHARACTERISTICS LOW POWER HIGH SPEED OLMS-50/60 SERIES PRODUCT NAME ROM OLMS-64/65 SERIES RAM POWER CONSUMP­ TION FEATURES RAM ROM MACHINE CYCLE FEATURES MSM6404 4000 x 8 256x4 952 nS I/O: 36

ic 2114

Abstract: 2114 static ram memory ic 2114 pin out
Contextual Info: SEMI 2114 STATIC, TTL IN/OUT 1024x4 N-MOS RAM's FEATURES • 1024 words x 4 bits • Three access times 200, 300, and 450 nsec • Low operating power — 175 mW typical • Common output bus • Three-state output drivers • Fully STATIC — no clock or refresh

8086 hex code

Abstract: interface 8254 with 8086 interfacing of lcd with 8086 CMOS 16-Bit Priority Encoder 8086 microprocessor serial communication 80286 microprocessor features microprocessors interface 8086 to 8253 8088 microprocessor pin 8086 microprocessor pin description 8254 8086
Contextual Info: Micro P/C ICs 11 PRODUCT TREES ANALOG Selection Guides Data Communication . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11-2 UARTs/BRGs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

4096 bit RAM

Abstract: rom 1024x8
Contextual Info: Delta39KTM And Quantum38KTM Dual-Port RAM Introduction The purpose of this application note is to provide information and instruction in implementing synchronous/asynchronous Dual-Port Random Access Memory DPRAM in Delta39K and Quantum38K ™ Complex Programmable Logic Devices

2114 static ram

Abstract: 2114-UCB L2114-2CB RAM 2114 L2114-3CE 2114-2CB semi 2114ucb L2114-2CE EMM Semi L2114UCB
Contextual Info: • 1024 words x 4 bits • T h ree access times 200, 300, and 450 nsec • Low operating power — 175 m W typical • Standard pow er — 222 m W typical • Com mon output bus • Three-state output drivers • Fully S T A T IC — no clock or refresh

64Kx8 CMOS RAM

Abstract: oki 80C88 256X4 CMOS RAM 4702 8089 bus oki 82c54 lcd 4x20 CSP-28 display lcd 4x20 interface 8254 with 8086
Contextual Info: Digital ICs 7 2009 P RODUCT S ELECTION GUIDE Digital ICs pg. 7-1 Micro P/C (pg. 7-4) Demodulators (pg. 7-2) Parallel EEPROM (pg. 7-3) Data Communication (pg. 7-4) Digital Filters (pg. 7-2) Memory/883 (pg. 7-3) LCD and LED Display Drivers (pg. 7-4) Down Converters

cic filter for digital down converter

Abstract: interface 8254 with 8086 8253 interface with 8086 Peripheral synchronization frame costas loop intersil 8253 6402 uart CMOS 16-Bit Priority Encoder
Contextual Info: Digital 5 A NALOG S IGNAL P ROCESSING Digital pg. 5-1 MicroP/C (pg. 5-4) Memory (pg. 5-4) Down Converters (pg. 5-2) Parallel EEPROM (pg. 5-4) Data Communication (pg. 5-4) Up Converters (pg. 5-2) Memory/883 (pg. 5-4) UARTs/BRGs (pg. 5-5) Demodulators (pg. 5-2)

K6R1004C1B

Abstract: K6R1004C1B-10 K6R1004C1B-12 K6R1004C1B-8
Contextual Info: PRELIMINARY Preliminary PRELIMINARY CMOS SRAM K6R1004C1B-C Document Title 256Kx4 Bit with OE High Speed Static RAM(5.0V Operating), Revolutionary Pin out. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Design Target. Apr. 1st, 1997

KM641003B

Abstract: KM641003B-10 KM641003B-12 KM641003B-8
Contextual Info: PRELIMINARY Preliminary PRELIMINARY CMOS SRAM KM641003B Document Title 256Kx4 Bit with OE High Speed Static RAM(5.0V Operating), Revolutionary Pin out. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Apr. 1st, 1997 Design Target

Contextual Info: Preliminary PRELIMINARY CMOS SRAM K6R1004V1B-C Document Title 256Kx4 Bit with OE High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Apr. 1st, 1997 Design Target Rev.1.0

Contextual Info: Preliminary PRELIMINARY CMOS SRAM KM64V1003B Document Title 256Kx4 Bit with OE High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Apr. 1st, 1997 Design Target Rev.1.0

bk p36

Abstract: 1024x1 static ram 16x4-Bit 4710B 4720B 4725B F16K3 F16K4 F16K5 M40272
Contextual Info: •n fO «i MOS 4096x1 1024x4 4096x1 - M40272 16,384x1 CO ro 4096x1 -fck 4096x1 cn Item o 0 o Organization s o (O Ô o 3 a Description Access Time ns (Max Cycle Time ns (Min) Power Dissipation mW (Max) S A H > z o 2 > o o m CO 2 m 5 o X k k k k k oo O 03

Contextual Info: Preliminary PRELIMINARY CMOS SRAM KM64V1003B Document Title 256Kx4 Bit with OE High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Apr. 1st, 1997 Design Target Rev.1.0