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    1024X1 STATIC RAM Search Results

    1024X1 STATIC RAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    27S07ADM/B
    Rochester Electronics LLC 27S07A - Standard SRAM, 16X4 PDF Buy
    27LS07DM/B
    Rochester Electronics LLC 27LS07 - Standard SRAM, 16X4 PDF Buy
    27S03/BEA
    Rochester Electronics LLC 27S03 - SRAM - Dual marked (860510EA) PDF Buy
    27S03ADM/B
    Rochester Electronics LLC 27S03A - 64-Bit, Low Power Biploar SRAM PDF Buy
    27S03ALM/B
    Rochester Electronics LLC 27S03A - 64-Bit, Low Power Biploar SRAM PDF Buy

    1024X1 STATIC RAM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1024x1 static ram

    Contextual Info: AMI _ S6508/S6508A AMERICAN 1024 BIT 1024X1 STATIC CMOS RAM Features General Description □ Ultra Low Standby Power The A M I S6508 family of 1024X1 bit static CMOS RAM s offers ultra low power dissipation w ith a single power supply. The device is available in two versions.


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    S6508/S6508A 1024X1) S6508 1024X1 S6508) S6508 S6508P S6508PI 1024x1 static ram PDF

    93L425DC

    Abstract: 93425 1024x1 static ram
    Contextual Info: 93425/93L425 1024x1-Bit Static Random Access Memory FAIRCHILD A Schlumberger Company Memory and High Speed Logic Description The 93425 is a 1024-bit read/write Random Access Memory RAM , organized 1024 words by one bit. It is designed for high speed cache, control and buffer


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    93425/93L425 1024x1-Bit 16-Pin 1024-bit 93L425) 93425XX30 93425YY30 93L425XX35 93425YY40 93L425YY40 93L425DC 93425 1024x1 static ram PDF

    Contextual Info: HM-6518 H A R R IS æ S E M I C O N D U C T O R 1024x1 CMOS RAM February 1992 Features Description • Low Power Standby. 50nW Max. The HM-6518 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous


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    HM-6518 1024x1 HM-6518 20mW/MHz 180ns PDF

    BIT 3195 G

    Abstract: 1024x1 static ram
    Contextual Info: f /\?r c h ?l B F100415 1024x1-Bit Static Random Access Memory A Schlumberger Company F100K ECL Product Connection Diagram Description The F100415 is a 1024-bit read/w rite Random Access M em ory RAM , organized as 1024 w ords by one bit per w ord and designed fo r high-speed scratchpad, control


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    F100415 1024x1-Bit F100K 16-Pin 1024-bit F100415 4096-Word BIT 3195 G 1024x1 static ram PDF

    Contextual Info: HM-6508/883 fS l H A R R I S S E M I C O N D U C T O R 1024x1 CMOS RAM February 1992 Features Description • This Circuit is Processed in Accordance to Mil-Std-883 and Is Fully Conform ant Under the Provi­ sions of Paragraph 1.2.1. The HM-6508/883 is a 1024 x 1 static CMOS RAM


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    HM-6508/883 1024x1 Mil-Std-883 HM-6508/883 180ns MIL-STD-1835, GDIP1-T16 MIL-M-38510 PDF

    4801a 8 pins

    Abstract: 4801A 1024x1 static ram EMM Semi 4kx1 static ram 4801 4096 bit static RAM 4096 bit RAM 4801ACC
    Contextual Info: *» '•*«>+• »»»V' «*•»,-r/- -» „¿ ÿ î^ - rtSiÈ Em m SEM I FEA TU R ES ■ Single + 5 V Power Supply ■ 4Kx1 Organization ■ Replaces 4 1024x1 Static RAMs ■ Com pletely S tatic—No C locks or Refresh ■ 18 Pin Package ■ A cce ss/C ycle Times As Low As 400 nsec max


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    4801450NSEC, 4096x1 1024x1 Number4801 40961-bit 4801a 8 pins 4801A 1024x1 static ram EMM Semi 4kx1 static ram 4801 4096 bit static RAM 4096 bit RAM 4801ACC PDF

    RAM 2102

    Abstract: 2102-2 RAM 2102 Static RAM tle 4201 1024x1 static ram 2102N 56369 "Pin compatible" Signetics 1024X1
    Contextual Info: S ìg n e tìc s Memories M O S R A M C O N N E C T IO N D IA G R A M 2102-1024 Bit Read/Write Static MOS RAM 1024x1 ID A7 3a Ag » .E G E N E R A L D E S C R IP T IO N T h e 210 2 , 2102-1 and 2 1 0 2 -2 are static random access read/write mem ories fabricated with low threshold nchannel silicon gate technology.


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    1024x1) RAM 2102 2102-2 RAM 2102 Static RAM tle 4201 1024x1 static ram 2102N 56369 "Pin compatible" Signetics 1024X1 PDF

    bk p36

    Abstract: 1024x1 static ram 16x4-Bit 4710B 4720B 4725B F16K3 F16K4 F16K5 M40272
    Contextual Info: •n fO «i MOS 4096x1 1024x4 4096x1 - M40272 16,384x1 CO ro 4096x1 -fck 4096x1 cn Item o 0 o Organization s o (O Ô o 3 a Description Access Time ns (Max Cycle Time ns (Min) Power Dissipation mW (Max) S A H > z o 2 > o o m CO 2 m 5 o X k k k k k oo O 03


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    1024x4 F2114171 4096x1 M40272 M40273 M40274 M40275 bk p36 1024x1 static ram 16x4-Bit 4710B 4720B 4725B F16K3 F16K4 F16K5 PDF

    Contextual Info: HM-6508 f ï î H A R R IS U U S E M I C O N D U C T O R 1024x1 CMOS RAM February 1992 Features Description • Low Power S tandby. 50^iW Max. • Low Power O p e ra tio n . 20mW /MHz Max.


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    HM-6508 1024x1 HM-6508 180ns PDF

    1024x1 static ram

    Contextual Info: HS-6508RH ¡13 H A R R IS U U S E M I C O N D U C T O R Radiation Hardened 1024x1 CMOS RAM December 1992 Pinouts Features • Functional Total Dose 2 x 104 RAD Si HS1-6508RH 16 PIN CERAMIC DIP CASE OUTLINE D2, CONFIGURATION 3 • Latch-Up Free To > 5.0 x 1011 RAD(Si)/s


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    HS-6508RH 1024x1 HS1-6508RH 25mW/MHz 300ns 1024x1 static ram PDF

    IC HS 8110

    Abstract: IC HS 8108 HS 8110 IC HS 8109 hs 8109 IC HS 8108 8 PIN HS 8108 1024x1 static ram
    Contextual Info: m H A R R HS-6514RH I S S E M I C O N D U C T O R Radiation Hardened 1024x1 CMOS RAM December 1992 Pinouts Features • Total Dose 1 x 105 RAD SI HS1-6514RH 18 PIN CERAMIC DIP CASE OUTLINE D-6, CONFIGURATION 3 • Data Upset > 1O0 RAD (SiVs TO P V IE W • Latch-Up Free To > 1 x 1012 RAD (Si)/s


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    HS-6514RH 1024x1 HS1-6514RH 150ns HS9-6514RH IC HS 8110 IC HS 8108 HS 8110 IC HS 8109 hs 8109 IC HS 8108 8 PIN HS 8108 1024x1 static ram PDF

    AN 6518

    Abstract: 1024x1 static ram hm-6518 Z14H
    Contextual Info: HARRIS SEMICOND SECTOR 4bE ]> • HAS M3QS271 GGB'iOTO 1 HM-6518/883 HARRIS SEMICONDUCTOR t - 4 o -" Z _ 3 -o 5 1024x1 C M O S R A M January 1992 Features Description • This Circuit is Processed In Accordance to Mll-Std883 and Is Fully Conformant Under the Provisions of


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    M3QS271 HM-6518/883 1024x1 HM-6518/883 volt35, GDIP1-T18 M302E71 DIP-460 AN 6518 1024x1 static ram hm-6518 Z14H PDF

    1024X1

    Abstract: 54C930 ET 3005 D100MU 1024x1 static ram
    Contextual Info: I MIL-M-38510/239B 4 September 1984 SUPERSEDING MIL-M-38510/239A USAF 19 January 1981 QUALIFICATION REQUIREMENTS REMOVED MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, CMOS 1024 BIT RANDOM ACCESS MEMORY (RAM), MONOLITHIC SILICON This specification 1s approved for use by all D e p a r t ­


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    MIL-M-38510/239B MIL-M-38510/239A MIL-M-38510. 1024X1 54C930 ET 3005 D100MU 1024x1 static ram PDF

    MH1SS1

    Abstract: MH3SS2 MAF100 MH84 MHB4011 MZK105 MA3005 MH74141 MAA723 MH74188
    Contextual Info: INTEGRATED CIRCUITS INTEGRIERTE SCHALTKREISE ANALOG DIGITAL EXPORT IM P O R T KOVO INTEGRATED CIRCUITS INTEGRIERTE SCHALTKREISE 1984-85 C O N T E N T S I N H A L T 1. LINEAR INTEGRATED CIRCUITS LINEARE INTEGRIERTE SCHALTKREISE Integrierte Schaltkreise für U nterhaltungs­


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    MH3000 MH3000. MHB8080A 3304S MH1SS1 MH3SS2 MAF100 MH84 MHB4011 MZK105 MA3005 MH74141 MAA723 MH74188 PDF

    VEB mikroelektronik

    Abstract: "Mikroelektronik" Heft GWS servo VEB Kombinat zf filter lm 7803 3V Positive Voltage Regulator E355D "halbleiterwerk frankfurt" mikroelektronik Heft U706D VQB71
    Contextual Info: H albleiter-B auelem ente Semiconductors D ie vorliegend e Übersicht en th ält in g ed rä n g te r Form d ie wichtigsten G renz- und Kenn­ d aten d e r in d er D D R g efertigten H a lb le ite rb au e le m e n te . Dem A n w en der soll durch diese Übersicht die Auswahl der jew eils in Frage kom menden


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    PDF

    3284f

    Abstract: BT812 OTI-077 2TT 4.00 MG CL-GD543X ati rage 3d ii ATI Rage M3 OTI64107 spitfire ATI Rage pro 128
    Contextual Info: OAK TECHNOLOGY Multimedia Solutions in Silicon SPITFIRE 64-bit Multimedia GUI Accelerator OTI-64107/64105 Preliminary Specification September 1994 Oak Technology, Inc. • 139 Kifer Court • Sunnyvale, CA 94086 *Phone 408 737-0888 • FAX (408) 737-3838


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    64-bit OTI-64107/64105 OTI-64107/64105 OTI-64107 240-pin 3284f BT812 OTI-077 2TT 4.00 MG CL-GD543X ati rage 3d ii ATI Rage M3 OTI64107 spitfire ATI Rage pro 128 PDF