1023 TRANSISTOR Search Results

Contextual Info: H Avantek Products Thin-Film Cascadable Amplifier 10 to 1000 MHz Technical Data UTO/UTC 1023 Series Features Description Pin Configuration • Frequency Range: 10 to 1000␣MHz The 1023 Series is a thin-film bipolar RF amplifier for higher output power and medium-gain

a1232

Abstract: a1741
Contextual Info: Thin-Film Cascadable Amplifier 10 to 1000 MHz Technical Data UTO/UTC 1023 Series Features Description Pin Configuration • Frequency Range: 10 to 1000 MHz The 1023 Series is a thin-film bipolar RF amplifier for higher output power and medium-gain applications up to 1000 MHz.

Contextual Info: Thin-Film Cascadable Amplifier 10 to 1000 MHz Technical Data UTO/UTC 1023 Series Features Description Pin Configuration • Frequency Range: 10 to 1000 MHz The 1023 Series is a thin-film bipolar RF amplifier for higher output power and medium-gain applications up to 1000 MHz.

Contextual Info: Wha\ H EW LETT WÍEMP A C K A R D Avantek Products Thin-Film Cascadable Amplifier 10 to 1000 MHz Technical Data UTO/CJTC 1023 Series Features Description Pin Configuration • F requency Range: 10 to 1000 MHz The 1023 Series is a thin-film bipolar RF amplifier for higher

transistor A1023

Abstract: transistor A1023 y A1023 A1023 Y a1023 transistor A1023 K Y kec a1023 KTC1027 A-1023 KTA1023
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KT A 1023 EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURE • Complementary to KTC1027. MAXIMUM RATINGS Ta=25 °C SYMBOL RATING UNIT Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -120 V Emitter-Base Voltage

Contextual Info: Darlington Transistors Darlington Power Transistors ITO-220 TO-220 ITO-3P MTO-3P Bipolar transistors Absolute Maximum Ratings Electrica Characteristics VcEO VcBO VcEO V ebo lc Ib Pi Tstg Tj [V ] [V ] [V ] [A ] [A ] [W ] [°C] [ ”C ] 2SD1022 100 100 1023

Contextual Info: 1023 FIBER SENSORS High Speed High Accuracy Eddy Current Type Digital Displacement Sensor GP-X SERIES Related Information •■General terms and conditions. F-17 ■■Glossary of terms. P.1397 ■■Sensor selection guide. P.967~

phototransistor ultraviolet

Abstract: 6N140 "immune to high radiation" H1061 Neutron sensitive PIN diode MIL-HDBK-279 4N55 6N134 military optocoupler high sensitive neutron PIN diode
Contextual Info: Radiation Immunity of Avago Technologies Optocouplers Application Note 1023 Introduction This application note describes the immunity of Avago Technologies optocoupters to the effects of high radiation environments, such as those encountered in military and space applications. According to

HP optocoupler

Abstract: photodiode and phototransistor transistor 1012 Transistor 1967 MIL-HDBK-279 6N140 hp optocouplers military optocoupler H1061 4N55
Contextual Info: ÉÉSSfflieÉ . . . % - • • - HEWLETT ■-■-ÿ-ii* , ; . " 1 • ' ÉPPLICATION NOTE 1023 PACKARD ■Iii|iinn»naii8— ■ ■ ig j; - ; This application note describes the im m unity of HewlettPackard optocouplers to the effects of high radiation

2SC6114G5GP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2SC6114G5GP SURFACE MOUNT Transistor VOLTAGE 50 Volts CURRENT 0.1 Ampere APPLICATION * Small signal low frequency amplifier. FEATURE  %37  * Surface mount package. FBPT-1023) * Low cob. Cob=0.2pF(Typ.) * PC= 150mW a

TH3L10

Abstract: TK3L10 TH5P4 transistor d 1795 417 TRANSISTOR zener diode 1283
Contextual Info: Darlington T ra n sisto rs Darlington Transistors Bipolartransistors Part l\lo. EIAJ No. Absolute Maximum Ratings VCBO VCEO V ebo lc Ib Pt [V] [V] [V] [A] [A] [W] 100 200 100 100 200 VCEO min 2SD1022 1023 1024 1025 1026 1027 200 200 100 200 200 1349 500

TH653

Contextual Info: Darlington Transistors Darlington Pow er T ra n s is to rs T0-220 bipolar transistors Type No. Electrical Characteristics Absolute Maximum Ratings Vcbo E IA J VCEO V ebo [V ] 2SD1022 100 100 1023 200 200 1024 100 100 1025 200 200 1026 100 100 200 200 500 400

Contextual Info: KSD1413 NPN SILICON DARLINGTON TRANSISTOR POWER AMPLIFIER APPLICATIONS TO -22 0 F • H igh DC C urrent G ain • Low C ollector E m itter Saturation V oltag e • c o m p le m e n t to K SB 1023 ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Rating Unit

TH3L10

Abstract: TH3L10 ic TK3L10 T7K40 T15J10 TP10K40 3J10 3L10Z 5L20 2SB1282
Contextual Info: POWER TRANSISTORS asnas? 3 EE J> — » ti Ä ± SÉ fé Absolute Maximum Ratings Vceo V ceo V ebo Type No. [V] [V] 2SD1022 T5L10 I00 100 1023 20 200 200 1024 T 8L10 I00 I00 1025 20 200 200 1026 T 15 L1 0 I00 I00 1027 20 200 200 1349 T 7K40 500 400 2SD1788

Contextual Info: DATA S HE E T TFT COLOR LCD MODULES NL10276AC20-03 26 cm 10.4 inches , 1024 x 768 pixels, 4096 colors, incorporated backlight DESCRIPTION NL10276AC20-03 is a TFT (thin film transistor) active matrix color LCD (liquid crystal display) comprising amorphous silicon TFT attached to each signal electrode, a driving circuit, and a backlight.

NL10276BC26

Abstract: b0741 NL10276BC26-01 D1022 B7410036 TFT LCD TV data driver IC
Contextual Info: DATA SHEET TFT COLOR LCD MODULE NL10276BC26-01, 02 34 cm 13.3 TYPE , 1024 x 768 PIXELS, 262144 COLORS, INCORPORATED ONE LAMP/EDGE-LIGHT TYPE BACKLIGHT DESCRIPTION NL10276BC26-01, 02 is a TFT (thin film transistor) active matrix color liquid crystal display (LCD) module

2SB893

Abstract: SB893 1023C
Contextual Info: Ordering number:1023C PNP Epitaxial Planar Silicon Transistor 2SB893 Large-Current Driving Applications Applications Package Dimensions • Power supplies, relay drivers, lamp drivers, strobes. unit:mm 2003A Features [2SB893] · Low saturation voltage : VCE sat ≤–0.45V (IC=–1.5A, IB=–0.15A).

Contextual Info: Ordering number:ENN1023C PNP Epitaxial Planar Silicon Transistor 2SB893 Large-Current Driving Applications Applications Package Dimensions • Power supplies, relay drivers, lamp drivers, strobes. unit:mm 2003B Features [2SB893] 5.0 4.0 4.0 5.0 · Low saturation voltage :

2SB893

Abstract: ITR08662 ITR08663 ITR08664 ITR08665
Contextual Info: Ordering number:ENN1023C PNP Epitaxial Planar Silicon Transistor 2SB893 Large-Current Driving Applications Applications Package Dimensions Æ Power supplies, relay drivers, lamp drivers, strobes. unit:mm 2003B Features [2SB893] 5.0 4.0 4.0 5.0 Æ Low saturation voltage :

THC63LVDF64A

Abstract: Transistor NEC 05D Y2P TRANSISTOR KAB2402162 NL10276bc28 THC63LVDF63A nec 05d 14.1 inch NL10276BC28-05D thine THC63LVDF63A
Contextual Info: DATA SHEET TFT COLOR LCD MODULE NL10276BC28-05D 36 cm 14.1 inches , 1024 x 768 pixels, 262,144 colors, LVDS interface, high luminance DESCRIPTION The NL10276BC28-05D is a TFT (thin film transistor) active-matrix color liquid crystal display (LCD) module

THC63LVDF64A

Abstract: Y2P TRANSISTOR Transistor NEC 05D lcd screen LVDS connector 30 pins nl10276bc28 5 x 7 dot matrix display common cathode CONNECTOR 5 PIN PET FI-SE20M lcd module tft 17 nec 14 tv diagram
Contextual Info: DATA SHEET TFT COLOR LCD MODULE NL10276BC28-05D 36 cm 14.1 inches , 1024 u 768 pixels, 262,144 colors, LVDS Interface, High luminance DESCRIPTION NL10276BC28-05D is a TFT (thin film transistor) active matrix color liquid crystal display (LCD) comprising amorphous silicon TFT attached to each signal electrode, a driving circuit and a backlight. NL10276BC28-05D has

150PW031

Abstract: lcd nec NL10276AC30 THC63LVDF64A
Contextual Info: DATA SHEET TFT COLOR LCD MODULE NL10276AC30-04 38 cm 15.0 inches , 1024 x 768 pixels, 262,144 colors, Incorporated two-lamp/Edge-light type backlight Wide viewing angle DESCRIPTION NL10276AC30-04 is a TFT (thin film transistor) active matrix color liquid crystal display (LCD) comprising

Contextual Info: TO SH IBA ST1000EX21 TENTATIVE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR ST1000EX21 HIGH POWER SWITCHING APPLICATIONS Unit in mm M OTOR CONTRO L APPLICATIONS • All Electric contacts by Pressure Structure and Airtight finivi a x . Package • Anti-Parallel Fast Recovery Diode in This Package

ST1000EX21

Abstract: transistor JF 1000A diode 5V IGBT 1000A
Contextual Info: TOSHIBA ST1000EX21 TENTATIVE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR ST1000EX21 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • All Electric contacts by Pressure Structure and Airtight Package Anti-Parallel Fast Recovery Diode in This Package