102 M5C Search Results

CA3042

Abstract: LA1342 A7051 MTZ JT-7216B valvo R820
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SHR400R21

Abstract: H-17 H-18 T-39
Contextual Info: — 102 — 2 * SH R 40 0 R 2 1 o m w rm tt -> i; 3 1300V C 9—> • o 630A 4 0 ^ s fe ^ • « A tt i* « rii! till SH R400R21 Ç' Vdsm / V drm /t (A\)//T(R\1S> 1300 ( f < 5 ms, r ; = 0 ~ 1 1 5 “C ) / 1300 400 ./ 630 /ft(AV)//ft( RMS) 150 / 235 I tsm

2D1150D-050

Abstract: 2DI100Z-120 2DI150D H-17 H-18 H-19 H-22
Contextual Info: Ovó 002 oo fi Oi 001 08 001 001 OOfil 001 001 OSS 008 OS* 0021 0001 OS* 008 OS* 00*1 0021 0021 0001 OSÉ 008 3I °" A 8 tB % 0002 00*2 0081 0002 0002 08EI 0002 08ÊI 0002 0002 0091 0091 0*21 0091 0*21 0091 0091 0001 0001 00i CAO moi OSI Ofil fi21~0*fi2I~0*S2I—OT—

102 m5c

Abstract: 103 m5c
Contextual Info: Schottky Barrier Diodes SBD MA3SD05 Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 (0.44) • Features 0.12+0.05 –0.02 0.88+0.05 –0.03 3° (0.44) 1 2 1.60±0.05 • Series connection • High-density mounting is possible • SS-Mini type 3-pin package

102 m5c

Abstract: 103 m5c MA4SD05X
Contextual Info: Schottky Barrier Diodes SBD MA4SD05X Silicon epitaxial planar type For high-speed switching circuits Unit: mm 1.6±0.05 1.0±0.05 • Features  Two isolated elements are contained in one package, allowing high-density mounting  Optimum for high frequency rectification because of its short reverse recovery

Contextual Info: Schottky Barrier Diodes SBD MA3SD05F Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 Maximum peak reverse voltage Single Symbol Rating Unit VR 45 V VRM 45 V IF 100 mA Series Peak forward Single current Series Non-repetitive peak Single 300 IFSM

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4SD05X Silicon epitaxial planar type For high-speed switching circuits Unit: mm 1.6±0.05 1.0±0.05 • Features  Two isolated elements are contained in one package, allowing high-density

103 m5c

Abstract: MA3SD05F marking m5c
Contextual Info: Schottky Barrier Diodes SBD MA3SD05F Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 Maximum peak reverse voltage Single Symbol Rating Unit VR 45 V VRM 45 V IF 100 mA Double Peak forward Single current Double Non-repetitive peak Single 300 IFSM

MA5J002D

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA5J002D Silicon epitaxial planar type Unit: mm 2.0±0.1 For high speed switching circuits 0.7±0.1 • Includes 4 elements of anode common connection • Parts reduction is possible

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4SD05X Silicon epitaxial planar type For high-speed switching circuits Unit: mm 1.6±0.05 1.0±0.05 • Features  Two isolated elements are contained in one package, allowing high-density

MA3SD05F

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3SD05F Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 Maximum peak reverse voltage Single Symbol Rating Unit VR 45 V VRM 45 V IF 100 mA Series Peak forward

MA5J002D

Abstract: marking m5c
Contextual Info: Switching Diodes MA5J002D Silicon epitaxial planar type Unit: mm 2.0±0.1 For high speed switching circuits 0.7±0.1 • Includes 4 elements of anode common connection • Parts reduction is possible • Ideal for surge voltage absorption 1 2 5˚ 1.25±0.1

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3SD05F Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 Maximum peak reverse voltage Single Symbol Rating Unit VR 45 V VRM 45 V IF 100 mA Series Peak forward

MA5J002D

Contextual Info: Switching Diodes MA5J002D Silicon epitaxial planar type Unit: mm 2.0±0.1 For high speed switching circuit 0.7±0.1 • S-Mini type 5-pin package • Includes 4 elements of annode common connection • Parts reduction is possible • Ideal for surge voltage absorption

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA5J002D Silicon epitaxial planar type Unit: mm 2.0±0.1 For high speed switching circuits 0.7±0.1 • Includes 4 elements of anode common connection • Parts reduction is possible

ky 708

Contextual Info: SAMSUNG SEMICONDUCTOR SALES OFFICES - U.S.A. North Central Northwest 300 Park Boulevard Suite 210 Itasca, IL 60143-2636 TEL: 708 775-1050 FAX: (708) 775-1058 3655 North First Street San Jose, CA 95134 TEL: (408) 954-7000 FAX: (408) 954-7883 south Central

MA4SD05X

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4SD05X Silicon epitaxial planar type For high-speed switching circuits Unit: mm 1.6±0.05 1.0±0.05 • Features  Two isolated elements are contained in one package, allowing high-density

MA4SD05X

Abstract: marking m5c
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4SD05X Silicon epitaxial planar type For high-speed switching circuits Unit: mm 1.6±0.05 1.0±0.05 • Features  Two isolated elements are contained in one package, allowing high-density

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3SD05FG Silicon epitaxial planar type For high frequency rectification • Features ■ Package • Series connection • High-density mounting is possible • Code

MA3SD05F

Abstract: marking m5c
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3SD05F Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 For high frequency rectification • Features (0.44) M Di ain sc te on na tin nc ue e/ d 0.12+0.05

MA3SD05FG

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3SD05FG Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high frequency rectification • Features ■ Package • Series connection • High-density mounting is possible

MA5J002D

Abstract: marking m5c
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA5J002D Silicon epitaxial planar type Unit: mm 2.0±0.1 For high speed switching circuits 0.7±0.1 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low

SAMSUNG 834

Abstract: shing wai k27419 NA76 st 8843 D8024 ITT 813
Contextual Info: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. North East North Central Northwest 20 Mall Road Suite 410 Burlington, MA 01803 Tel: 617 273-4888 Fax: (617) 273-9363 300 Park Boulevard Suite 210 Itasca. IL 60143-2636 Tel: (708)775-1050 Fax: (708) 775-1058 3655 North First Street

MA5J002D

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA5J002D Silicon epitaxial planar type Unit: mm 2.0±0.1 0.7±0.1 (0.65) (0.65) 5 4 1.25±0.1 2.1±0.1 • Features 1 2 5˚ Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b